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Yongjie Hu

Yongjie Hu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2019arXiv

Role of higher-order phonon scattering in the zone-center optical phonon linewidth and the Lorenz oscillator model

Zone-center optical phonon linewidth is a key parameter for infrared and Raman spectra as well as the Lorenz oscillator model. While three-phonon scattering was often assumed to be the leading contribution, in this work we find, surprisingly, that higher-order phonon scattering universally plays a significant or even dominant role over three-phonon scattering at room temperature, and more so at elevated temperatures, for a wide range of materials including diamond, Si, Ge, boron arsenide (BAs), cubic silicon carbide (3C-SiC), and $α$-quartz. This is enabled by the large fourphonon scattering phase space of zone-center optical phonons, and distinct from heat conduction where at room temperature four-phonon scattering is still secondary to three-phonon scattering. Moreover, our results imply that five-phonon and even higher-order scattering may be significant for some large band-gap materials, e.g., BAs. Our predicted infrared optical properties through the Lorenz oscillator model, after including four-phonon scattering, show much better agreement with experimental measurements than those three-phonon based predictions. This work will raise broad interest of studying high-order scattering in various areas beyond heat conduction.

preprint2013arXiv

Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 μ$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier doping of Si nanowires.

preprint2011arXiv

Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

preprint2007arXiv

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.