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Charles M. Marcus

Charles M. Marcus appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.supr-concond-mat.str-el

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Published work

18 published item(s)

preprint2022arXiv

Nonreciprocal devices based on voltage-tunable junctions

We propose to couple the flux degree of freedom of one mode with the charge degree of freedom of a second mode in a hybrid superconducting-semiconducting architecture. Nonreciprocity can arise in this architecture in the presence of external static magnetic fields alone. We leverage this property to engineer a passive on-chip gyrator, the fundamental two-port nonreciprocal device which can be used to build other nonreciprocal devices such as circulators. We analytically and numerically investigate how the nonlinearity of the interaction, circuit disorder and parasitic couplings affect the scattering response of the gyrator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids

We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial non-uniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film, that passivates the heterostructure from exposure to air, is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below <50 nm. We demonstrate local patterning of AO by realizing a semiconductor-based Josephson junction operating up to 0.3 T perpendicular.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Destructive Little-Parks Effect in a Full-Shell Nanowire-based Transmon

A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low $E_J/E_C$ regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half-quantum of applied flux. In the first lobe, phase winding around the shell can induce topological superconductivity in the core. Coherent qubit operation is observed in both the zeroth and first lobes. Splitting of parity bands by coherent single-electron coupling across the junction is not resolved beyond line broadening, placing a bound on Majorana coupling, $E_M/h$ < 10 MHz, much smaller than the Josephson coupling $E_J/h$ ~ 4.7 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Dispersive sensing in hybrid InAs/Al nanowires

Dispersive charge sensing is realized in hybrid semiconductor-superconductor nanowires in gate-defined single- and double-island device geometries. Signal-to-noise ratios (SNRs) were measured both in the frequency and time domain. Frequency-domain measurements were carried out as a function of frequency and power and yield a charge sensitivity of $1 \times 10^{-3} e/\sqrt{\rm Hz}$ for an 11 MHz measurement bandwidth. Time-domain measurements yield SNR > 1 for 20 $μ$s integration time. At zero magnetic field, photon-assisted tunneling was detected dispersively in a double-island geometry, indicating coherent hybridization of the two superconducting islands. At an axial magnetic field of 0.6 T, subgap states are detected dispersively, demonstrating the suitability of the method for sensing in the topological regime.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Photon Assisted Tunneling of Zero Modes in a Majorana Wire

Hybrid nanowires with proximity-induced superconductivity in the topological regime host Majorana zero modes (MZMs) at their ends, and networks of such structures can produce topologically protected qubits. In a double-island geometry where each segment hosts a pair of MZMs, inter-pair coupling mixes the charge parity of the islands and opens an energy gap between the even and odd charge states at the inter-island charge degeneracy. Here, we report on the spectroscopic measurement of such an energy gap in an InAs/Al double-island device by tracking the position of the microwave-induced quasiparticle (qp) transitions using a radio-frequency (rf) charge sensor. In zero magnetic field, photon assisted tunneling (PAT) of Cooper pairs gives rise to resonant lines in the 2e-2e periodic charge stability diagram. In the presence of a magnetic field aligned along the nanowire, resonance lines are observed parallel to the inter-island charge degeneracy of the 1e-1e periodic charge stability diagram, where the 1e periodicity results from a zero-energy sub-gap state that emerges in magnetic field. Resonant lines in the charge stability diagram indicate coherent photon assisted tunneling of single-electron states, changing the parity of the two islands. The dependence of resonant frequency on detuning indicates a sizable (GHz-scale) hybridization of zero modes across the junction separating islands.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Edge Transport in the Trivial Phase of InAs/GaSb

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Filter function formalism beyond pure dephasing and non-Markovian noise in singlet-triplet qubits

The filter function formalism quantitatively describes the dephasing of a qubit by a bath that causes Gaussian fluctuations in the qubit energies with an arbitrary noise power spectrum. Here, we extend this formalism to account for more general types of noise that couple to the qubit through terms that do not commute with the qubit's bare Hamiltonian. Our approach applies to any power spectrum that generates slow noise fluctuations in the qubit's evolution. We demonstrate our formalism in the case of singlet-triplet qubits subject to both quasistatic nuclear noise and $1/ω^α$ charge noise and find good agreement with recent experimental findings. This comparison shows the efficacy of our approach in describing real systems and additionally highlights the challenges with distinguishing different types of noise in free induction decay experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Milestones toward Majorana-based quantum computing

We introduce a scheme for preparation, manipulation, and readout of Majorana zero modes in semiconducting wires with mesoscopic superconducting islands. Our approach synthesizes recent advances in materials growth with tools commonly used in quantum-dot experiments, including gate-control of tunnel barriers and Coulomb effects, charge sensing, and charge pumping. We outline a sequence of milestones interpolating between zero-mode detection and quantum computing that includes (1) detection of fusion rules for non-Abelian anyons using either proximal charge sensors or pumped current; (2) validation of a prototype topological qubit; and (3) demonstration of non-Abelian statistics by braiding in a branched geometry. The first two milestones require only a single wire with two islands, and additionally enable sensitive measurements of the system's excitation gap, quasiparticle poisoning rates, residual Majorana zero-mode splittings, and topological-qubit coherence times. These pre-braiding experiments can be adapted to other manipulation and readout schemes as well.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Noise suppression using symmetric exchange gates in spin qubits

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene on silicon nitride for optoelectromechanical micromembrane resonators

Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an electrical system would facilitate exciting hybrid optoelectromechanical devices. However, capacitive coupling of such dielectric membranes is rather weak. Here we add a single layer of graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene coated membranes is found to be equal to a perfectly conductive membrane. Our results show that a single layer of graphene substantially enhances the electromechanical capacitive coupling without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of SiN micromembrane resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Synthesis of Long-T1 Silicon Nanoparticles for Hyperpolarized 29Si Magnetic Resonance Imaging

We describe the synthesis, materials characterization and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na4Si4) and silicon tetrachloride (SiCl4) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted 29Si spin lattice relaxation (T1) times (> 600 s), which are retained after hyperpolarization by low temperature DNP.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct Graphene Growth on Insulator

Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600°C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hot Carrier Transport and Photocurrent Response in Graphene

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very inefficient electron cooling, resulting in an abundance of hot carriers. The hot-carrier-mediated energy transport dominates the photoresponse and manifests itself in quantum efficiencies that can exceed unity, as well as in a characteristic dependence of the photocurrent on gate voltages. The pattern of multiple photocurrent sign changes as a function of gate voltage provides a fingerprint of hot-carrier-dominated transport and carrier multiplication.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.

0 citations0 reviewsNo code linkedOpen access