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Yongjian Zhou

Yongjian Zhou contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Controllable anomalous Nernst effect in an antiperovskite antiferromagnet

Anomalous Nernst effect (ANE), the generation of a transverse electric voltage by a longitudinal temperature gradient, has attracted increasing interests of researchers recently, due to its potential in the thermoelectric power conversion and close relevance to the Berry curvature of the band structure. Avoiding the stray field of ferromagnets, ANE in antiferromagnets (AFM) has the advantage of realizing highly efficient and densely integrated thermopiles. Here, we report the observation of ANE in an antiperovskite noncollinear AFM Mn3SnN experimentally, which is triggered by the enhanced Berry curvature from Weyl points located close to the Fermi level. Considering that antiperovskite Mn3SnN has rich magnetic phase transition, we modulate the noncollinear AFM configurations by the biaxial strain, which enables us to control its ANE. Our findings provide a potential class of materials to explore the Weyl physics of noncollinear AFM as well as realizing antiferromagnetic spin caloritronics that exhibits promising prospects for energy conversion and information processing.

preprint2022arXiv

Observation of spin splitting torque in a collinear antiferromagnet RuO2

Current-induced spin torques provide efficient data writing approaches for magnetic memories. Recently, the spin splitting torque (SST) was theoretically predicted (R. González-Hernández et al. Phys. Rev. Lett. 126, 127701 (2021)), which combines advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) as well as enables controllable spin polarization. Here we provide the experimental evidence of SST in collinear antiferromagnet RuO2 films. The spin current direction is found to be correlated to the crystal orientation of RuO2 and the spin polarization direction is dependent on (parallel to) the Néel vector. These features are quite characteristic for the predicted SST. Our finding not only present a new member for the spin torques besides traditional STT and SOT, but also proposes a promising spin source RuO2 for spintronics.

preprint2021arXiv

Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet

Out-of-plane spin polarization σ_z has attracted increasing interests of researchers recently, due to its potential in high-density and low-power spintronic devices. Noncollinear antiferromagnet (AFM), which has unique 120° triangular spin configuration, has been discovered to possess σ_z. However, the physical origin of σ_z in noncollinear AFM is still not clear, and the external magnetic field-free switching of perpendicular magnetic layer using the corresponding σ_z has not been reported yet. Here, we use the cluster magnetic octupole in antiperovskite AFM Mn3SnN to demonstrate the generation of σ_z. σ_z is induced by the precession of carrier spins when currents flow through the cluster magnetic octupole, which also relies on the direction of the cluster magnetic octupole in conjunction with the applied current. With the aid of σ_z, current induced spin-orbit torque (SOT) switching of adjacent perpendicular ferromagnet is realized without external magnetic field. Our findings present a new perspective to the generation of out-of-plane spin polarizations via noncollinear AFM spin structure, and provide a potential path to realize ultrafast high-density applications.

preprint2021arXiv

Magnon-mediated interlayer coupling in an all-antiferromagnetic junction

The interlayer coupling mediated by fermions in ferromagnets brings about parallel and anti-parallel magnetization orientations of two magnetic layers, resulting in the giant magnetoresistance, which forms the foundation in spintronics and accelerates the development of information technology. However, the interlayer coupling mediated by another kind of quasi-particle, boson, is still lacking. Here we demonstrate such a static interlayer coupling at room temperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the two antiferromagnetic Fe2O3 layers are functional materials and the antiferromagnetic Cr2O3 layer serves as a spacer. The Néel vectors in the top and bottom Fe2O3 are strongly orthogonally coupled, which is bridged by a typical bosonic excitation (magnon) in the Cr2O3 spacer. Such an orthogonally coupling exceeds the category of traditional collinear interlayer coupling via fermions in ground state, reflecting the fluctuating nature of the magnons, as supported by our magnon quantum well model. Besides the fundamental significance on the quasi-particle-mediated interaction, the strong coupling in an antiferromagnetic magnon junction makes it a realistic candidate for practical antiferromagnetic spintronics and magnonics with ultrahigh-density integration.

preprint2020arXiv

Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator

Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy, where the switching is detected by spin Hall magnetoresistance. Reversible switching is found at room temperature for a threshold current density of 10^7 A cm^-2. The YIG sublattices with antiparallel and unequal magnetic moments are aligned parallel or antiparallel to the direction of current pulses, which is consistent to the Neel order switching in antiferromagnetic system. It is proposed that such a switching behavior may be triggered by the antidamping-torque acting on the two antiparallel sublattices of FiMI. Our finding not only broadens the magnetization switching by electrical means and promotes the understanding of magnetization switching, but also paves the way for all-electrically modulated microwave devices and spin caloritronics with low power consumption.

preprint2020arXiv

Stacking Order Driven Optical Properties and Carrier Dynamics in ReS2

Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principle calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm-1 for AA stacking, and 20 cm-1 for AB stacking, making a simple tool for determining the stacking orders in ReS2. Polarized photoluminescence (PL) reveals that AB stacking possesses blue-shifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. Our findings underscore the stacking-order driven optical properties and carrier dynamics of ReS2, mediate many seemingly contradictory results in literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.