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Yong Shim

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Emerging Technologies cond-mat.dis-nn Hardware Architecture

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preprint2020arXiv

sBSNN: Stochastic-Bits Enabled Binary Spiking Neural Network with On-Chip Learning for Energy Efficient Neuromorphic Computing at the Edge

In this work, we propose stochastic Binary Spiking Neural Network (sBSNN) composed of stochastic spiking neurons and binary synapses (stochastic only during training) that computes probabilistically with one-bit precision for power-efficient and memory-compressed neuromorphic computing. We present an energy-efficient implementation of the proposed sBSNN using 'stochastic bit' as the core computational primitive to realize the stochastic neurons and synapses, which are fabricated in 90nm CMOS process, to achieve efficient on-chip training and inference for image recognition tasks. The measured data shows that the 'stochastic bit' can be programmed to mimic spiking neurons, and stochastic Spike Timing Dependent Plasticity (or sSTDP) rule for training the binary synaptic weights without expensive random number generators. Our results indicate that the proposed sBSNN realization offers possibility of up to 32x neuronal and synaptic memory compression compared to full precision (32-bit) SNN and energy efficiency of 89.49 TOPS/Watt for two-layer fully-connected SNN.

preprint2016arXiv

Ising spin model using Spin-Hall Effect (SHE) induced magnetization reversal in Magnetic-Tunnel-Junction

Ising spin model is considered as an efficient computing method to solve combinatorial optimization problems based on its natural tendency of convergence towards low energy state. The underlying basic functions facilitating the Ising model can be categorized into two parts, "Annealing and Majority vote". In this paper, we propose an Ising cell based on Spin Hall Effect (SHE) induced magnetization switching in a Magnetic Tunnel Junction (MTJ). The stochasticity of our proposed Ising cell based on SHE induced MTJ switching, can implement the natural annealing process by preventing the system from being stuck in solutions with local minima. Further, by controlling the current through the Heavy-Metal (HM) underlying the MTJ, we can mimic the majority vote function which determines the next state of the individual spins. By solving coupled \textit{Landau-Lifshitz-Gilbert} (LLG) equations, we demonstrate that our Ising cell can be replicated to map certain combinatorial problems. We present results for two representative problems - Maximum-cut and Graph coloring - to illustrate the feasibility of the proposed device-circuit configuration in solving combinatorial problems. Our proposed solution using a Heavy Metal (HM) based MTJ device can be exploited to implement compact, fast, and energy efficient Ising spin model.

preprint2016arXiv

Proposal for an All-Spin Artificial Neural Network: Emulating Neural and Synaptic Functionalities Through Domain Wall Motion in Ferromagnets

Non-Boolean computing based on emerging post-CMOS technologies can potentially pave the way for low-power neural computing platforms. However, existing work on such emerging neuromorphic architectures have either focused on solely mimicking the neuron, or the synapse functionality. While memristive devices have been proposed to emulate biological synapses, spintronic devices have proved to be efficient at performing the thresholding operation of the neuron at ultra-low currents. In this work, we propose an All-Spin Artificial Neural Network where a single spintronic device acts as the basic building block of the system. The device offers a direct mapping to synapse and neuron functionalities in the brain while inter-layer network communication is accomplished via CMOS transistors. To the best of our knowledge, this is the first demonstration of a neural architecture where a single nanoelectronic device is able to mimic both neurons and synapses. The ultra-low voltage operation of low resistance magneto-metallic neurons enables the low-voltage operation of the array of spintronic synapses, thereby leading to ultra-low power neural architectures. Device-level simulations, calibrated to experimental results, was used to drive the circuit and system level simulations of the neural network for a standard pattern recognition problem. Simulation studies indicate energy savings by ~ 100x in comparison to a corresponding digital/ analog CMOS neuron implementation.

preprint2014arXiv

STT-SNN: A Spin-Transfer-Torque Based Soft-Limiting Non-Linear Neuron for Low-Power Artificial Neural Networks

Recent years have witnessed growing interest in the use of Artificial Neural Networks (ANNs) for vision, classification, and inference problems. An artificial neuron sums N weighted inputs and passes the result through a non-linear transfer function. Large-scale ANNs impose very high computing requirements for training and classification, leading to great interest in the use of post-CMOS devices to realize them in an energy efficient manner. In this paper, we propose a spin-transfer-torque (STT) device based on Domain Wall Motion (DWM) magnetic strip that can efficiently implement a Soft-limiting Non-linear Neuron (SNN) operating at ultra-low supply voltage and current. In contrast to previous spin-based neurons that can only realize hard-limiting transfer functions, the proposed STT-SNN displays a continuous resistance change with varying input current, and can therefore be employed to implement a soft-limiting neuron transfer function. Soft-limiting neurons are greatly preferred to hard-limiting ones due to their much improved modeling capacity, which leads to higher network accuracy and lower network complexity. We also present an ANN hardware design employing the proposed STT-SNNs and Memristor Crossbar Arrays (MCA) as synapses. The ultra-low voltage operation of the magneto metallic STT-SNN enables the programmable MCA-synapses, computing analog-domain weighted summation of input voltages, to also operate at ultra-low voltage. We modeled the STT-SNN using micro-magnetic simulation and evaluated them using an ANN for character recognition. Comparisons with analog and digital CMOS neurons show that STT-SNNs can achieve more than two orders of magnitude lower energy consumption.