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Yong Seung Kim

Yong Seung Kim contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2013arXiv

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD.

preprint2013arXiv

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

preprint2012arXiv

Thickness-independent transport channels in topological insulator Bi2Se3 thin films

With high quality topological insulator (TI) Bi2Se3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ~8 QL (QL: quintuple layer, 1 QL = ~1 nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ~3.0 x 10^13 cm^-2 down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ~8 x 10^12 cm^-2 only down to ~8 QL. The weak antilocalization parameters also exhibited similar thickness-independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.

preprint2011arXiv

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi2Se3 and Si substrate, as verified by RHEED (Reflection High Energy Electron Diffraction), TEM (Transmission Electron Microscopy) and XRD (X-Ray Diffraction). The lattice constant of Bi2Se3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film down to the first quintuple layer without any second phase or an amorphous layer.

preprint2011arXiv

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to intrinsic doping by selenium vacancies, leading to metallic bulk states. In such non-ideal TIs it is not well understood how the surface and bulk states behave under environmental disorder. In this letter, based on transport measurements of Bi2Se3 thin films, we show that the bulk states are sensitive to environmental disorder but the surface states remain robust.

preprint2011arXiv

Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak anti-localization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.