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Yong-Guk Choe

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cond-mat.mtrl-sci physics.optics

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preprint2015arXiv

Infrared absorption property of silicon carbide-silica nanocables synthesized by ethanol pyrolysis

A controllable synthesis method for SiC-SiO$_{2}$ nanocables has been proposed. The diameter of SiC core and thickness of SiO$_{2}$ shell were changed by adjusting the flow ratio between Ar dilution gas and ethanol precursor. With increasing the flow, the enhancement of 1137cm$^{-1}$ peak was observed from fourier transform infrared spectroscopy (FTIR) spectra. This peak is considered to be originated from a highly disordered surface structure of SiO$_{2}$ shell which was enhanced with increasing the flow. The FTIR spectra show the 910cm$^{-1}$ peak which is attributed to surface phonon resonance in the nanostructure of SiC exited by p-polarized field component.

preprint2013arXiv

Defect energetics and electronic structures of As-doped p-type ZnO crystals: A first-principles study

First-principles calculations based on density functional theory have been carried out to understand the mechanism of fabricating As-doped p-type ZnO semiconductors. It has been confirmed that AsZn-2VZn complex is the most plausible acceptor among several candidates for p-type doping by computing the formation and ionization energies. The electronic band structures and atomic-projected density of states of AsZn-2VZn defect complex-contained ZnO bulks have been computed. The acceptor level in AsZn-2VZn band structure has found to be 0.12 eV, which is in good agreement with the experimental ionization energy (0.12 ~ 0.18 eV). The hybridization among O 2p, Zn 3d and As 4s states has been observed around the valence band maximum.