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Yong-Chang Lau

Yong-Chang Lau appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

10 published item(s)

preprint2026arXiv

Comments on the formula to extract current-induced torques from the harmonic Hall voltage measurements

We examine the formulas commonly used to estimate current-induced spin-orbit torques from harmonic Hall voltage measurements. In particular, we focus on the factor of two discrepancy among expressions employed to fit harmonic Hall signals measured under an in-plane rotating magnetic field. By explicitly deriving the relevant relations, we clarify the origin of this discrepancy and present the correct form of the fitting formula. We further discuss the determination of the sign of the field-like torque from harmonic Hall voltage measurements, which depends on the assumed form of the current-induced torques.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Intercorrelated anomalous Hall and spin Hall effect in kagome-lattice Co$_3$Sn$_2$S$_2$-based shandite films

Magnetic Weyl semimetals (mWSMs) are characterized by linearly dispersive bands with chiral Weyl node pairs associated with broken time reversal symmetry. One of the hallmarks of mWSMs is the emergence of large intrinsic anomalous Hall effect. On heating the mWSM above its Curie temperature, the magnetism vanishes while exchange-split Weyl point pairs collapse into doubly-degenerated gapped Dirac states. Here, we reveal the attractive potential of these Dirac nodes in paramagnetic state for efficient spin current generation at room temperature via the spin Hall effect. Ni and In are introduced to separately substitute Co and Sn in a prototypal mWSM Co$_3$Sn$_2$S$_2$ shandite film and tune the Fermi level. Composition dependence of spin Hall conductivity for paramagnetic shandite at room temperature resembles that of anomalous Hall conductivity for ferromagnetic shandite at low temperature; exhibiting peak-like dependence centering around the Ni-substituted Co$_2$Ni$_1$Sn$_2$S$_2$ and undoped Co$_3$Sn$_2$S$_2$ composition, respectively. The peak shift is consistent with the redistribution of electrons' filling upon crossing the ferromagnetic-paramagnetic transition, suggesting intercorrelation between the two Hall effects. Our findings highlight a novel strategy for the quest of spin Hall materials, guided by the abundant experimental anomalous Hall effect data of ferromagnets in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin Hall effect driven by the spin magnetic moment current in Dirac materials

The spin Hall effect of a Dirac Hamiltonian system is studied using semiclassical analyses and the Kubo formula. In this system, the spin Hall conductivity is dependent on the definition of spin current. All components of the spin Hall conductivity vanish when spin current is defined as the flow of spin angular momentum. In contrast, the off-diagonal components of the spin Hall conductivity are non-zero and scale with the carrier velocity (and the effective $g$-factor) when spin current consists of the flow of spin magnetic moment. We derive analytical formula of the conductivity, carrier mobility and the spin Hall conductivity to compare with experiments. In experiments, we use Bi as a model system that can be characterized by the Dirac Hamiltonian. Te and Sn are doped into Bi to vary the electron and hole concentration, respectively. We find the spin Hall conductivity ($σ_\mathrm{SH}$) takes a maximum near the Dirac point and decreases with increasing carrier density ($n$). The sign of $σ_\mathrm{SH}$ is the same regardless of the majority carrier type. The spin Hall mobility, proportional to $σ_\mathrm{SH}/n$, increases with increasing carrier mobility with a scaling coefficient of $\sim$1.4. These features can be accounted for quantitatively using the derived analytical formula. The results demonstrate that the giant spin magnetic moment, with an effective $g$-factor that approaches 100, is responsible for the spin Hall effect in Bi.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films

This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficiency of -7.8% was obtained.The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, thickness dependence of spin Hall efficiency, and shift of anomalous Hall loops under applied currents were also investigated. This study not only contributes to the understanding of the mechanisms of spin-current generation from magnetic-WSM-based heterostructures, but also paves a way for the applications of magnetic WSMs in spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant inverse Faraday effect in Dirac semimetals

We have studied helicity dependent photocurrent (HDP) in Bi-based Dirac semimetal thin films. HDP increases with film thickness before it saturates, changes its sign when the majority carrier type is changed from electrons to holes and takes a sharp peak when the Fermi level lies near the charge neutrality point. These results suggest that irradiation of circularly polarized light to Dirac semimetals induces an effective magnetic field that aligns the carrier spin along the light spin angular momentum and generates a spin current along the film normal. The effective magnetic field is estimated to be orders of magnitude larger than that caused by the inverse Faraday effect (IFE) in typical transition metals. We consider the small effective mass and the large $g$-factor, characteristics of Dirac semimetals with strong spin orbit coupling, are responsible for the giant IFE, opening pathways to develop systems with strong light-spin coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interlayer exchange coupling through Ir-doped Cu spin Hall material

Metallic superlattices where the magnetization vectors in the adjacent ferromagnetic layers are antiferromagnetically coupled by the interlayer exchange coupling through nonmagnetic spacer layers are systems available for the systematic study on antiferromagnetic (AF) spintronics. As a candidate of nonmagnetic spacer layer material exhibiting remarkable spin Hall effect, which is essential to achieve spin-orbit torque switching, we selected the Ir-doped Cu in this study. The AF-coupling for the Co / Cu$_{95}$Ir$_{5}$ / Co was investigated, and was compared with those for the Co / Cu / Co and Co / Ir / Co. The maximum magnitude of AF-coupling strength was obtained to be 0.39 mJ/m$^{2}$ at the Cu$_{95}$Ir$_{5}$ thickness of about 0.75 nm. Furthermore, we found a large spin Hall angle of Cu$_{95}$Ir$_{5}$ in Co / Cu$_{95}$Ir$_{5}$ bilayers by carrying out spin Hall magnetoresistance and harmonic Hall voltage measurements, which are estimated to be 3 ~ 4 %. Our experimental results clearly indicate that Cu$_{95}$Ir$_{5}$ is a nonmagnetic spacer layer allowing us to achieve moderately strong AF-coupling and to generate appreciable spin-orbit torque via the spin Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers

We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir multilayers and asymmetric Pt/Co/Ir, Ir/Co/Pt multilayers. First, the interface contribution to the PMA is studied using the Co layer thickness dependence of the effective PMA energy. Comparison of the interfacial PMA between the Ir/Co/Pt, Pt/Co/Ir asymmetric structures and Pt/Co/Pt, Ir/Co/Ir symmetric structures indicate that the broken structural inversion symmetry induced PMA is small compared to the overall interfacial PMA. Second, we find the magnetic anisotropy field is significantly increased in multilayers when the ferromagnetic layers are antiferromagnetically coupled via interlayer exchange coupling (IEC). Macrospin model calculations can qualitatively account for the relation between the anisotropy field and the IEC. Among the structures studied, IEC is the largest for the asymmetric Ir/Co/Pt multilayers: the exchange coupling field exceeds 3 T and consequently, the anisotropy field approaches 10 T. Third, comparing the asymmetric Ir/Co/Pt and Pt/Co/Ir structures, we find the IEC and, to some extent, the interface PMA are stronger for the former than the latter. X-ray magnetic circular dichroism studies suggest that the proximity induced magnetization in Pt is larger for the Ir/Co/Pt multilayers than the inverted structure, which may partly account for the difference in the magnetic properties. These results show the intricate relation between PMA, IEC and the proximity induced magnetization that can be exploited to design artificial structures with unique magnetic characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons

We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ alloy. The SHC increases with increasing thickness of the Bi$_{1-x}$Sb$_x$ alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the $L$ valley of the narrow gap Bi$_{1-x}$Sb$_x$ alloy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Designing a fully-compensated half-metallic ferrimagnet

Recent experimental work on Mn2RuxGa demonstrates its potential as a compensated ferrimagnetic half-metal (CFHM).Here we present a set of high-throughput ab initio density functional theory calculations and detailed experimental characterisation, that enable us to correctly describe the nominal Mn2RuxGa thin films, in particular with regard to site-disorder and defects. We then construct models that accurately capture all the key features of the Mn-Ru-Ga system, including magnetic compensation and the spin gap at the Fermi level. We find that electronic doping is neccessary, which is achieved with a Mn/Ga ratio smaller than two. Our study shows how composition and substrate-induced biaxial strain can be combined to design the first room-temperature CFHM.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru spacer. The preferred magnetic state of the free layer is determined by the current polarity and the nature of the interlayer exchange coupling (IEC). Our strategy offers a scalable solution to realize bias-field-free SOT switching that can lead to a generation of SOT-based devices, that combine high storage density and endurance with potentially low power consumption.

0 citations0 reviewsNo code linkedOpen access