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Masamitsu Hayashi

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Published work

34 published item(s)

preprint2026arXiv

Comments on the formula to extract current-induced torques from the harmonic Hall voltage measurements

We examine the formulas commonly used to estimate current-induced spin-orbit torques from harmonic Hall voltage measurements. In particular, we focus on the factor of two discrepancy among expressions employed to fit harmonic Hall signals measured under an in-plane rotating magnetic field. By explicitly deriving the relevant relations, we clarify the origin of this discrepancy and present the correct form of the fitting formula. We further discuss the determination of the sign of the field-like torque from harmonic Hall voltage measurements, which depends on the assumed form of the current-induced torques.

preprint2025arXiv

Light-programmable reorientation of the crystallographic c-axis of Tellurium thin films

Tellurium (Te), a two-dimensional material with pronounced structural anisotropy, exhibits exceptional electrical and optical properties that are highly sensitive to its crystallographic orientation. However, conventional synthesis techniques offer limited control over the in-plane alignment of Te's crystallographic c-axis, hindering large-scale integration. Here, we report a novel, non-contact method to dynamically manipulate the c-axis orientation of Te thin films using linearly polarized picosecond laser pulses. We show that the c-axis can be omnidirectionally reoriented perpendicular to the laser polarization, even in initially polycrystalline films. This reorientation is fully reversible, allowing for rewritable and spatially selective control of the c-axis orientation post-deposition. Our light-driven approach enables programmable anisotropy in Te, opening new avenues for reconfigurable optoelectronic and photonic devices, such as active metasurfaces and CMOS-compatible architectures.

preprint2023arXiv

Anomalous Hall effect of light-driven three-dimensional Dirac electrons in bismuth

Recent advancement in laser technology has opened the path toward the manipulation of functionalities in quantum materials by intense coherent light. Here, we study three-dimensional (3D) Dirac electrons driven by circularly polarized light (CPL), when the photon energy lies within the Dirac bands. As an experimental realization of this setup, we irradiate a thin film sample of elemental bismuth, which is a well-known semimetal hosting 3D Dirac electrons, with mid-infrared CPL. We successfully observe the emergence of the anomalous Hall effect (AHE) via terahertz Faraday rotation that is both pump-helicity-dependent and instantaneous. We compare our experimental findings with the results of Floquet theory, which is a powerful framework for analyzing the electronic band structure driven by coherent light. The contribution from the band structures near the one-photon resonant positions to the AHE shows a field-strength dependence consistent with our experimental results. The effective Hamiltonian on which we base our model calculations also implies that a pair of "double Weyl points" emerge due to the CPL-induced hybridization between the occupied and unoccupied 3D Dirac bands. Our findings shed light on ultrafast control of material properties in nonlinear topological optics.

preprint2022arXiv

Large surface acoustic wave nonreciprocity in synthetic antiferromagnets

We have studied the transmission of surface acoustic waves (SAWs) in ferromagnetic/non-magnetic/ferromagnetic tryilayers. The SAW scattering matrix is studied for devices with various non-magnetic spacer thickness, which defines the strength of the interlayer exchange coupling. We find the SAW transmission amplitude depends on their propagation direction when the two ferromagnetic layers are coupled antiferromagnetically. The degree of such SAW nonreciprocity increases with increasing exchange coupling strength and reaches 37 dB/mm for a device with the thinnest spacer layer. These results show the potential of interlayer exchange coupled synthetic antiferromagnets for viable acoustic nonreciprocal transmission devices, such as circulators and isolators.

preprint2022arXiv

Spin Hall effect driven by the spin magnetic moment current in Dirac materials

The spin Hall effect of a Dirac Hamiltonian system is studied using semiclassical analyses and the Kubo formula. In this system, the spin Hall conductivity is dependent on the definition of spin current. All components of the spin Hall conductivity vanish when spin current is defined as the flow of spin angular momentum. In contrast, the off-diagonal components of the spin Hall conductivity are non-zero and scale with the carrier velocity (and the effective $g$-factor) when spin current consists of the flow of spin magnetic moment. We derive analytical formula of the conductivity, carrier mobility and the spin Hall conductivity to compare with experiments. In experiments, we use Bi as a model system that can be characterized by the Dirac Hamiltonian. Te and Sn are doped into Bi to vary the electron and hole concentration, respectively. We find the spin Hall conductivity ($σ_\mathrm{SH}$) takes a maximum near the Dirac point and decreases with increasing carrier density ($n$). The sign of $σ_\mathrm{SH}$ is the same regardless of the majority carrier type. The spin Hall mobility, proportional to $σ_\mathrm{SH}/n$, increases with increasing carrier mobility with a scaling coefficient of $\sim$1.4. These features can be accounted for quantitatively using the derived analytical formula. The results demonstrate that the giant spin magnetic moment, with an effective $g$-factor that approaches 100, is responsible for the spin Hall effect in Bi.

preprint2021arXiv

Determination of the Dzyaloshinskii-Moriya interaction using pattern recognition and machine learning

Machine learning is applied to a large number of modern devices that are essential in building energy efficient smart society. Audio and face recognition are among the most well-known technologies that make use of such artificial intelligence. In materials research, machine learning is adapted to predict materials with certain functionalities, an approach often referred to as materials informatics. Here we show that machine learning can be used to extract material parameters from a single image obtained in experiments. The Dzyaloshinskii-Moriya (DM) interaction and the magnetic anisotropy distribution of thin film heterostructures, parameters that are critical in developing next generation storage class magnetic memory technologies, are estimated from a magnetic domain image. Micromagnetic simulation is used to generate thousands of random images for training and model validation. A convolutional neural network system is employed as the learning tool. The DM exchange constant of typical Co-based thin film heterostructures is studied using the trained system: the estimated values are in good agreement with experiments. Moreover, we show that the system can independently determine the magnetic anisotropy distribution, demonstrating the potential of pattern recognition. This approach can considerably simplify experimental processes and broaden the scope of materials research.

preprint2020arXiv

Acoustic spin Hall effect in strong spin-orbit metals

We report on the observation of the acoustic spin Hall effect that facilitates lattice motion induced spin current via spin orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find a spin current flows orthogonal to the propagation direction of a surface acoustic wave (SAW) in non-magnetic metals. The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in non-magnetic metal (NM)/ferromagnetic metal (FM) bilayers. The acoustic voltage takes a maximum when the NM layer thickness is close to its spin diffusion length, vanishes for NM layers with weak SOI and increases linearly with the SAW frequency. To account for these results, we find the spin current must scale with the SOI and the time derivative of the lattice displacement. Such form of spin current can be derived from a Berry electric field associated with time varying Berry curvature and/or an unconventional spin-lattice interaction mediated by SOI. These results, which imply the strong coupling of electron spins with rotating lattices via the SOI, show the potential of lattice dynamics to supply spin current in strong spin orbit metals.

preprint2020arXiv

Giant inverse Faraday effect in Dirac semimetals

We have studied helicity dependent photocurrent (HDP) in Bi-based Dirac semimetal thin films. HDP increases with film thickness before it saturates, changes its sign when the majority carrier type is changed from electrons to holes and takes a sharp peak when the Fermi level lies near the charge neutrality point. These results suggest that irradiation of circularly polarized light to Dirac semimetals induces an effective magnetic field that aligns the carrier spin along the light spin angular momentum and generates a spin current along the film normal. The effective magnetic field is estimated to be orders of magnitude larger than that caused by the inverse Faraday effect (IFE) in typical transition metals. We consider the small effective mass and the large $g$-factor, characteristics of Dirac semimetals with strong spin orbit coupling, are responsible for the giant IFE, opening pathways to develop systems with strong light-spin coupling.

preprint2020arXiv

Highly efficient spin orbit torque in Pt/Co/Ir multilayers with antiferromagnetic interlayer exchange coupling

We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films when the Co layers are coupled ferromagnetically and antiferromagnetically. SOT is evaluated using current induced shift of the anomalous Hall resistance hysteresis loops. A relatively thick Pt layer, serving as a seed layer to the multilayer, is used to generate spin current via the spin Hall effect. In the absence of antiferromagnetic coupling, the SOT is constant against the applied current density and the corresponding spin torque efficiency (i.e. the effective spin Hall angle) is $\sim$0.09, in agreement with previous reports. In contrast, for films with antiferromagnetic coupling, the SOT increases with the applied current density and eventually saturates. The SOT at saturation is a factor of $\sim$15 larger than that without the antiferromagnetic coupling. The spin torque efficiency is $\sim$5 times larger if we assume the net total magnetization is reduced by a factor of 3 due to the antiferromagnetic coupling. Model calculations based on the Landau Lifshitz Gilbert equation show that the presence of antiferromagnetic coupling can increase the SOT but the degree of enhancement is limited, in this case, to a factor of 1.2-1.4. We thus consider there are other sources of SOT, possibly at the interfaces, which may account for the highly efficient SOT in the uncompensated synthetic anti-ferromagnet (SAF) multilayers.

preprint2019arXiv

Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers

We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir multilayers and asymmetric Pt/Co/Ir, Ir/Co/Pt multilayers. First, the interface contribution to the PMA is studied using the Co layer thickness dependence of the effective PMA energy. Comparison of the interfacial PMA between the Ir/Co/Pt, Pt/Co/Ir asymmetric structures and Pt/Co/Pt, Ir/Co/Ir symmetric structures indicate that the broken structural inversion symmetry induced PMA is small compared to the overall interfacial PMA. Second, we find the magnetic anisotropy field is significantly increased in multilayers when the ferromagnetic layers are antiferromagnetically coupled via interlayer exchange coupling (IEC). Macrospin model calculations can qualitatively account for the relation between the anisotropy field and the IEC. Among the structures studied, IEC is the largest for the asymmetric Ir/Co/Pt multilayers: the exchange coupling field exceeds 3 T and consequently, the anisotropy field approaches 10 T. Third, comparing the asymmetric Ir/Co/Pt and Pt/Co/Ir structures, we find the IEC and, to some extent, the interface PMA are stronger for the former than the latter. X-ray magnetic circular dichroism studies suggest that the proximity induced magnetization in Pt is larger for the Ir/Co/Pt multilayers than the inverted structure, which may partly account for the difference in the magnetic properties. These results show the intricate relation between PMA, IEC and the proximity induced magnetization that can be exploited to design artificial structures with unique magnetic characteristics.

preprint2019arXiv

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons

We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ alloy. The SHC increases with increasing thickness of the Bi$_{1-x}$Sb$_x$ alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the $L$ valley of the narrow gap Bi$_{1-x}$Sb$_x$ alloy.

preprint2016arXiv

Current-Induced Instability of a Perpendicular Ferromagnet in Spin Hall Geometry

We develop a theoretical formula of spin Hall torque in the presence of two ferromagnets. While the direction of the conventional spin Hall torque always points to the in-plane direction, the present system enables to manipulate the torque direction acting on one magnetization by changing the direction of another magnetization. Based on the diffusion equation of the spin accumulation and the Landauer formula, we derive analytical formula of the spin Hall torque. The present model provides a solution to switch a perpendicular ferromagnet deterministically at zero field using the spin Hall effect.

preprint2016arXiv

Giant nonreciprocal emission of spin waves in Ta/Py bilayers

Spin waves are propagating disturbances in the magnetization of magnetic materials. One of their interesting properties is the nonreciprocity, exhibiting that their amplitude depends on the magnetization direction. Nonreciprocity in spin waves is of great interest in both fundamental science and applications, as it offers an extra knob to control the flow of waves for the technological fields of logics and switch applications. We show a high nonreciprocity in spin waves from Ta/Py bilayer systems with out-of-plane magnetic fields. The nonreciprocity depends on the thickness of Ta underlayer which is found to induce an interfacial anisotropy. The origin of observed high nonreciprocity is twofold; different polarities of the in-plane magnetization due to different angles of canted out-of-plane anisotropy and the spin pumping effect at the Ta/Py interface. Our findings provide an opportunity to engineer highly efficient nonreciprocal spin wave based applications such as nonreciprocal microwave devices, magnonic logic gates, and information transports.

preprint2016arXiv

Spin Hall magnetoresistance in metallic bilayers

Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator (FI) systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity with temperature. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM/FM interface.

preprint2016arXiv

Spin orbit effects in CoFeB/MgO hetereostructures with heavy metal underlayers

We study effects originating from the strong spin orbit coupling in CoFeB/MgO heterostructures with heavy metal (HM) underlayers. The perpendicular magnetic anisotropy at the CoFeB/MgO interface, the spin Hall angle of the heavy metal layer, current induced torques and the Dzyaloshinskii-Moriya interaction at the HM/CoFeB interfaces are studied for films in which the early 5d transition metals are used as the HM underlayer. We show how the choice of the HM layer influences these intricate spin orbit effects that emerge within the bulk and at interfaces of the heterostructures.

preprint2016arXiv

Spin-orbit torque in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO epitaxial magnetic heterostructures

We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru layers. The magnitudes of the SOT effective fields were found to significantly depend on the underlayer material (Cr or Ru) as well as their thicknesses. The damping-like longitudinal effective field (ΔH_L) increases with increasing underlayer thickness for all heterostructures. In contrast, the field-like transverse effective field (ΔH_T) increases with increasing Ru thickness while it is almost constant or slightly decreases with increasing Cr thickness. The sign of ΔH_L observed in the Cr-underlayer devices is opposite from that in the Ru-underlayer devices while ΔH_T shows the same sign with a small magnitude. The opposite directions of ΔHL indicate that the signs of spin Hall angle in Cr and Ru are opposite, which are in good agreement with theoretical predictions. These results show sizable contribution from SOT even for elements with small spin orbit coupling such as 3d Cr and 4d Ru.

preprint2016arXiv

Tunable inertia of chiral magnetic domain walls

The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a topological object that has been observed to follow this behavior. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya (DM) exchange constant. The time needed to accelerate a DW with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the DM exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral DWs. Such unique feature of chiral DWs can be utilized to move and position DWs with lower current, key to the development of storage class memory devices.

preprint2015arXiv

Correlation between the spin Hall angle and the structural phases of early 5d transition metals

We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalline phases emerge as the thickness is increased for certain elements. We find that the heavy metal layer thickness dependence of the SMR reflects these changes in structure. The spin Hall angle largest |θ$_{SH}$| of Hf, Ta, W and Re (~0.11, 0.10, 0.23 and 0.07, respectively) is found when the dominant phase is amorphous-like. We find that the amorphous-like phase not only possesses large resistivity but also exhibits sizeable spin Hall conductivity, which both contribute to the emergence of the large spin Hall angle.

preprint2015arXiv

Critical current destabilizing perpendicular magnetization by the spin Hall effect

The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect is included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the damping constant and is much larger than that of conventional spin torque switching of collinear magnetic systems, as in magnetic tunnel junctions. With the fieldlike torque included, we find that the critical current scales with the damping constant as $α^{0}$ (i.e., damping independent),$α$, and $α^{1/2}$ depending on the sign of the fieldlike torque and other parameters such as the external field. Numerical and analytical results show that the critical current can be significantly reduced when the fieldlike torque possesses the appropriate sign, i.e. when the effective field associated with the fieldlike torque is pointing opposite to the spin direction of the incoming electrons. These results provide a pathway to reducing the current needed to switch magnetization using the spin Hall effect.

preprint2015arXiv

Current driven asymmetric magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures

The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic instabilities via spin transfer torques (STT). At interface(s), spin current generated from the spin Hall effect in a neighboring layer can exert torques, referred to as the spin Hall torques, on the magnetic moments. Here, we study current induced magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures with a heavy metal (HM) underlayer. Depending on the thickness of the HM underlayer, we find distinct differences in the inplane field dependence of the threshold switching current. The STT is likely responsible for the magnetization reversal for the thinner underlayer films whereas the spin Hall torques cause the switching for thicker underlayer films. For the latter, we find differences in the switching current for positive and negative currents and initial magnetization directions. We find that the growth process during the film deposition introduces an anisotropy that breaks the symmetry of the system and causes the asymmetric switching. The presence of such symmetry breaking anisotropy enables deterministic magnetization switching at zero external fields.

preprint2015arXiv

Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlO$_x$ and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlO$_x$, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlO$_x$, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures.

preprint2015arXiv

Spin Hall torque driven chiral domain walls in magnetic heterostructures

The motion of magnetic domain walls in ultrathin magnetic heterostructures driven by current via the spin Hall torque is described. We show results from perpendicularly magnetized CoFeB|MgO heterostructures with various heavy metal underlayers. The domain wall moves along or against the current flow depending on the underlayer material. The direction to which the domain wall moves is associated with the chirality of the domain wall spiral formed in these heterostructures. The one-dimensional model is used to describe the experimental results and extract parameters such as the Dzyaloshinskii-Moriya exchange constant which is responsible for the formation of the domain wall spiral. Fascinating effects arising from the control of interfaces in magnetic heterostructures are described.

preprint2014arXiv

Anomalous temperature dependence of current induced torques in CoFeB|MgO heterostructures with Ta based underlayers

We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to be different between the two orthogonal components of the effective field, i.e. the damping-like term tends to saturate at smaller underlayer thickness than the field-like term. For large underlayer thickness films in which the effective field saturates, we find that the temperature significantly influences the size of the effective field. A striking difference is found in the temperature dependence of the two components: the damping-like term decreases whereas the field-like term increases with increasing temperature. Using a simple spin diffusion-spin transfer model, we find that all of these results can be accounted for provided the real and imaginary parts of an effective spin mixing conductance are negative. These results imply that either spin transport in this system is different from conventional metallic interfaces or effects other spin diffusion into the magnetic layer need to be taken account in order to model the system accurately.

preprint2014arXiv

Interface control of the magnetic chirality in CoFeB|MgO heterosctructures with heavy metal underlayers

Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Neel-type domain wall that can be driven by the spin Hall torque, a torque resulting from the spin current generated in a neighboring non-magnetic layer via the spin Hall effect. Here we show that the strength and sign of the DMI can be changed by modifying the adjacent heavy metal underlayer (X) in perpendicularly magnetized X|CoFeB|MgO heterstructures. Albeit the same spin Hall angle, a domain wall moves along or against the electron flow depending on the underlayer. We find that the sense of rotation of a domain wall spiral11 is reversed when the underlayer is changed from Hf to W and the strength of DMI varies as the number of 5d electrons of the heavy metal layer changes. The DMI can even be tuned by adding nitrogen to the underlayer, thus allowing interface engineering of the magnetic texture in ultrathin magnetic heterostructures.

preprint2013arXiv

Analytical expression for the harmonic Hall voltages in evaluating spin orbit torques

Solid understanding of current induced torques is key to the development of current and voltage controlled magnetization dynamics in ultrathin magnetic heterostructures. A versatile technique is needed to evaluate such torques in various systems. Here we examine the adiabatic (low frequency) harmonic Hall voltage measurement that has been recently developed to study current induced effective field that originate from the spin orbit effects. We analytically derive a form that can be used to evaluate the harmonic Hall voltages and extract relevant parameters in two representative systems, i.e. out of plane and in-plane magnetized systems. Contributions from the anomalous Hall and planar Hall effects are considered.

preprint2013arXiv

Characterization of magnetostatic surface spin waves in magnetic thin films: evaluation for microelectronic applications

The authors have investigated the possibility of utilizing spin waves for inter- and intra-chip communications, and as logic elements using both simulations and experimental techniques. Through simulations it has been shown that the decay lengths of magnetostatic spin waves are affected most by the damping parameter, and least by the exchange stiffness constant. The damping and dispersion properties of spin waves limit the attenuation length to several tens of microns. Thus, we have ruled out the possibility of inter-chip communications via spin waves. Experimental techniques for the extraction of the dispersion relationship have also been demonstrated, along with experimental demonstrations of spin wave interference for amplitude modulation. The effectiveness of spin wave modulation through interference, along with the capability of determining the spin wave dispersion relationships electrically during manufacturing and testing phase of chip production may pave the way for using spin waves in analog computing wherein the circuitry required for performing similar functionality becomes prohibitive.

preprint2013arXiv

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ~1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for Spintronics applications including magnetic tunnel junctions and domain wall devices.

preprint2013arXiv

Interface control of the magnetic chirality in TaN|CoFeB|MgO heterosctructures

Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Neel-type domain wall that can be driven by the spin Hall torque, a torque resulting from the spin current generated in a neighboring non-magnetic layer via the spin Hall effect. Here we show that the sign of the DMI, which determines the direction to which a domain wall moves with current, can be changed by modifying the adjacent non-magnetic layer. We find that the sense of rotation of a domain wall spiral is reversed when the Ta underlayer is doped with nitrogen in Ta|CoFeB|MgO heterostructures. The spin Hall angle of the Ta and nitrogen doped Ta underlayers carry the same sign, suggesting that the sign of the DMI is defined at the interface. Depending on the sense of rotation, spin transfer torque and spin Hall torque can either compete or assist each other, thus influencing the efficiency of moving domain walls with current.

preprint2013arXiv

Quantitative characterization of the spin orbit torque using harmonic Hall voltage measurements

Solid understanding of current induced torques is key to the development of current and voltage controlled magnetization dynamics in ultrathin magnetic heterostructures. To evaluate the size and direction of such torques, or effective fields, a number of methods have been employed. Here we examine the adiabatic (low frequency) harmonic Hall voltage measurement that has been used to study the effective field. We derive an analytical formula for the harmonic Hall voltages to evaluate the effective field for both out of plane and in-plane magnetized systems. The formula agrees with numerical calculations based on a macrospin model. Two different in-plane magnetized films, Pt|CoFeB|MgO and CuIr|CoFeB|MgO are studied using the formula developed. The effective field obtained for the latter system shows relatively good agreement with that estimated using a spin torque switching phase diagram measurements reported previously. Our results illustrate the versatile applicability of harmonic Hall voltage measurement for studying current induced torques in magnetic heterostructures.

preprint2012arXiv

Interference-mediated intensity modulation of spin waves

The modulation of propagating spin-wave amplitude in Ni81Fe19 (Py) films, resulting from constructive and destructive interference of spin wave, has been demonstrated. Spin waves were excited and detected inductively using pulse inductive time domain measurements. Two electrical impulses were used for launching two interfering Gaussian spin wave packets in Py films. The applied bias magnetic field or the separation between two pulses was used for tuning the amplitude of the resulting spin wave packets. This may thus be useful for spin wave based low-power information transfer and processing.

preprint2012arXiv

Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO

The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating magnetization electrically. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we show vector measurements of the current induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field shows significant dependence on the Ta and CoFeB layers' thickness. In particular, 1 nm thickness variation of the Ta layer can result in nearly two orders of magnitude difference in the effective field. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects that contribute to the effective field. The relative size of the effective field vector components, directed transverse and parallel to the current flow, varies as the Ta thickness is changed. Our results illustrate the profound characteristics of just a few atomic layer thick metals and their influence on magnetization dynamics.

preprint2012arXiv

Microwave assisted resonant domain wall nucleation in permalloy nanowires

We have designed a system to study microwave assisted domain wall nucleation in permalloy nanowires. We find a substantial decrease in the nucleation field when microwave fields are applied, in comparison to pulse fields. A clear resonance peak is observed in the frequency dependence of the nucleation field, which coincides with the uniform mode ferromagnetic resonance frequency. Owing to the well-defined nucleation process, the switching field distribution is small in contrast to previous reports. Our results show that localized microwave field provides an efficient tool for injecting domain walls into magnetic nanowires.

preprint2012arXiv

Spin waves interference from rising and falling edges of electrical pulses

The authors have investigated the effect of the electrical pulse width of input excitations on the generated spin waves in a NiFe strip using pulse inductive time domain measurements. The authors have shown that the spin waves resulting from the rising- and the falling-edges of input excitation pulses interfere either constructively or destructively, and have provided conditions for obtaining spin wave packets with maximum intensity at different bias conditions.

preprint2011arXiv

Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe(Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars

We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large magnetoresistance, and narrow generation linewidth below 10 MHz are observed. We also find that the linewidth shows significant dependence on the applied field magnitude and its angle within the film plane. A minimum in the linewidth is observed when the slope of the frequency versus current becomes near zero. This agrees with theoretical prediction that takes into account non-linear phase noise as a source for linewidth broadening.