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Researcher profile

Yoan Léger

Yoan Léger contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.opticsquant-ph

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Published work

3 published item(s)

preprint2022arXiv

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.

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preprint2020arXiv

Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Γ-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photoelectrochemical cells.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Generalization of Second-Order Quasi-Phase Matching in Whispering Gallery Mode Resonators Using Berry Phase

Second order nonlinearities in whispering gallery mode resonators are highly investigated for their many applications such as wavelength converters, entangled photon sources and generation of frequency combs. In such systems, depending on the material under scrutiny, the derivation of quasi-phase matching equations can lead to the appearance of additional quanta in the selection rule on the azimuthal confinement order. Here, we demonstrate that these additional quanta show up due to the Berry phase experienced by the transverse spin angular momentum components of the whispering gallery modes during their circulation within the resonator. We first detail the case of Zinc-blende materials and then generalize this theory to other crystal symmetries relevant for integrated photonics.

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