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Yixiu Wang

Yixiu Wang contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Deep Learning-based Predictive Control of Battery Management for Frequency Regulation

This paper proposes a deep learning-based optimal battery management scheme for frequency regulation (FR) by integrating model predictive control (MPC), supervised learning (SL), reinforcement learning (RL), and high-fidelity battery models. By taking advantage of deep neural networks (DNNs), the derived DNN-approximated policy is computationally efficient in online implementation. The design procedure of the proposed scheme consists of two sequential processes: (1) the SL process, in which we first run a simulation with an MPC embedding a low-fidelity battery model to generate a training data set, and then, based on the generated data set, we optimize a DNN-approximated policy using SL algorithms; and (2) the RL process, in which we utilize RL algorithms to improve the performance of the DNN-approximated policy by balancing short-term economic incentives and long-term battery degradation. The SL process speeds up the subsequent RL process by providing a good initialization. By utilizing RL algorithms, one prominent property of the proposed scheme is that it can learn from the data generated by simulating the FR policy on the high-fidelity battery simulator to adjust the DNN-approximated policy, which is originally based on low-fidelity battery model. A case study using real-world data of FR signals and prices is performed. Simulation results show that, compared to conventional MPC schemes, the proposed deep learning-based scheme can effectively achieve higher economic benefits of FR participation while maintaining lower online computational cost.

preprint2020arXiv

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the 2D form of tellurium, possesses chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

preprint2020arXiv

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.

preprint2019arXiv

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.