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Wenzhuo Wu

Wenzhuo Wu contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

DataEvolver: Let Your Data Build and Improve Itself via Goal-Driven Loop Agents

Constructing controllable visual data is a major bottleneck for image editing and multimodal understanding. Useful supervision is rarely produced by a single rendering pass; instead it emerges through iterative generation, inspection, correction, filtering, and export. We present DataEvolver, a closed-loop visual data engine that organizes this process around explicit goals, persistent artifacts, bounded corrective actions, and acceptance decisions. DataEvolver supports multiple artifact types, including RGB images, masks, depth maps, normal maps, meshes, poses, trajectories, and review traces. In the current release, the system operates through two coupled loops: generation-time self-correction within each sample and validation-time self-expansion across dataset rounds. We validate the framework on an image-level object-rotation setting. With a fixed Qwen-Edit LoRA probe, our final Ours+DualGate model outperforms both the unadapted base model and a public multi-angle LoRA on SpatialEdit and a held-out evaluation set. Ablations show a consistent improvement path from scene-aware generation to feedback-driven correction and dual-gated validation. Beyond the released rotation data, our main contribution is a reusable framework for building visual datasets through explicit goal tracking, review, correction, and acceptance loops.

preprint2022arXiv

Active Multi-Object Exploration and Recognition via Tactile Whiskers

Robotic exploration under uncertain environments is challenging when optical information is not available. In this paper, we propose an autonomous solution of exploring an unknown task space based on tactile sensing alone. We first designed a whisker sensor based on MEMS barometer devices. This sensor can acquire contact information by interacting with the environment non-intrusively. This sensor is accompanied by a planning technique to generate exploration trajectories by using mere tactile perception. This technique relies on a hybrid policy for tactile exploration, which includes a proactive informative path planner for object searching, and a reactive Hopf oscillator for contour tracing. Results indicate that the hybrid exploration policy can increase the efficiency of object discovery. Last, scene understanding was facilitated by segmenting objects and classification. A classifier was developed to recognize the object categories based on the geometric features collected by the whisker sensor. Such an approach demonstrates the whisker sensor, together with the tactile intelligence, can provide sufficiently discriminative features to distinguish objects.

preprint2020arXiv

A Ferroelectric Semiconductor Field-Effect Transistor

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

preprint2020arXiv

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the 2D form of tellurium, possesses chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

preprint2020arXiv

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.

preprint2019arXiv

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.