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Yingchang Yang

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Published work

3 published item(s)

preprint2021arXiv

Observation of the Orbital Rashba-Edelstein Magnetoresistance

We report the observation of magnetoresistance (MR) originating from the orbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu (Cu*) heterostructure: the orbital Rashba-Edelstein magnetoresistance. The angular dependence of the MR depends on the relative angle between the induced OAM and the magnetization in a similar fashion as the spin Hall magnetoresistance (SMR). Despite the absence of elements with large spin-orbit coupling, we find a sizable MR ratio, which is in contrast to the conventional SMR which requires heavy elements. By varying the thickness of the Cu* layer, we confirm that the interface is responsible for the MR, suggesting that the orbital Rashba-Edelstein effect is responsible for the generation of the OAM. Through Py thickness-dependence studies, we find that the effective values for the spin diffusion and spin dephasing lengths of Py are significantly larger than the values measured in Py / Pt bilayers, approximately by the factor of 2 and 4, respectively. This implies that another mechanism beyond the conventional spin-based scenario is responsible for the MR observed in Py / Cu* structures originated in a sizeable transport of OAM. Our findings not only unambiguously demonstrate the current-induced torque without using any heavy element via the OAM channel but also provide an important clue towards the microscopic understanding of the role that OAM transport can play for magnetization dynamics.

preprint2014arXiv

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room temperature (RT). Based on the first-principles calculations, here we predict a group of 2D topological insulators BiX/SbX (X = H, F, Cl, and Br) monolayers with extraordinarily large bulk gaps from 0.32 to a record value of 1.08 eV. These giant-gaps are entirely due to the result of strong spin-orbit interaction related to px and py orbitals of Bi/Sb atoms around the two valley K and K' of honeycomb lattice, which is different significantly from the one consisted of pz orbital just like in graphene/silicene. The topological characteristic of BiX/SbX monolayers is confirmed by the calculated nontrivial Z2 index and an explicit construction of the low energy effective Hamiltonian in these systems. We show that the honeycomb structures of BiX monolayers remain stable even at a temperature of 600 K. These features make the giant-gap TIs BiX/SbX monolayers an ideal platform to realize many exotic phenomena and fabricate new quantum devices operating at RT. Furthermore, biased BiX/SbX monolayers become a quantum valley Hall insulator, showing valley-selective circular dichroism.

preprint2013arXiv

Wide temperature span of entropy change in first-order metamagnetic MnCo1-xFexSi

The crystal structure and magnetic properties of MnCoxFe1-xSi (x=0-0.5) compounds were investigated. With increasing Fe content, the unit cell changes anisotropically and the magnetic property evolves gradually: Curie temperature decreases continuously, the first-order metamagnetic transition from a low-temperature helical antiferromagnetic state to a high-temperature ferromagnetic state disappears gradually and then a spin-glass-like state and another antiferromagnetic state emerge in the low temperature region. The Curie transition leads to a moderate conventional entropy change. The metamagnetic transition not only yields a larger negative magnetocaloric effect at lower applied fields than in MnCoSi but also produces a very large temperature span (103 K for H=5 T) of delta S(T), which results in a large refrigerant capacity. These phenomena were explained in terms of crystal structure change and magnetoelastic coupling mechanism. The low-cost MnCo1-xFexSi compounds are promising candidates for near room temperature magnetic refrigeration applications because of the large isothermal entropy change and the wide working temperature span.