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Ying Pan

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cond-mat.mtrl-sci physics.app-ph physics.optics quant-ph

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preprint2021arXiv

Three-dimensional entanglement on a silicon chip

Entanglement is a counterintuitive feature of quantum physics that is at the heart of quantum technology. High-dimensional quantum states offer unique advantages in various quantum information tasks. Integrated photonic chips have recently emerged as a leading platform for the generation, manipulation and detection of entangled photons. Here, we report a silicon photonic chip that uses novel interferometric resonance-enhanced photon-pair sources, spectral demultiplexers and high-dimensional reconfigurable circuitries to generate, manipulate and analyse path-entangled three-dimensional qutrit states. By minimizing on-chip electrical and thermal cross-talk, we obtain high-quality quantum interference with visibilities above 96.5% and a maximumly entangled qutrit state with a fidelity of 95.5%. We further explore the fundamental properties of entangled qutrits to test quantum nonlocality and contextuality, and to implement quantum simulations of graphs and high-precision optical phase measurements. Our work paves the path for the development of multiphoton high-dimensional quantum technologies.

preprint2020arXiv

High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s-1. Our devices pave new routes for future high-speed, energy-efficient, and cost-effective communication networks.

preprint2016arXiv

On the mechanism of hydrophilicity of graphene

It is generally accepted that the hydrophilic property of graphene can be affected by the underlying substrate. However, the role of intrinsic vs. substrate contributions and the related mechanisms are vividly debated. Here we show that the intrinsic hydrophilicity of graphene can be intimately connected to the position of its Fermi level, which affects the interaction between graphene and water molecules. The underlying substrate, or dopants, can tune hydrophilicity by modulating the Fermi level of graphene. By shifting the Fermi level of graphene away from its Dirac point, via either chemical or electrical voltage doping, we show enhanced hydrophilicity with experiments and first principle simulations. Increased vapor condensation on graphene, induced by a simple shifting of its Fermi level, exemplifies applications in the area of interfacial transport phenomena.