Researcher profile

Yin-Chung Chen

Yin-Chung Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Brillouin Cooling in a Linear Waveguide

Brillouin scattering is not usually considered as a mechanism that can cause cooling of a material due to the thermodynamic dominance of Stokes scattering in most practical systems. However, it has been shown in experiments on resonators that net phonon annihilation through anti-Stokes Brillouin scattering can be enabled by means of a suitable set of optical and acoustic states. The cooling of traveling phonons in a linear waveguide, on the other hand, could lead to the exciting future prospect of manipulating unidirectional phonon fluxes and even the nonreciprocal transport of quantum information via phonons. In this work, we present an analysis of the conditions under which Brillouin cooling of phonons of both low and high group velocities may be achieved in a linear waveguide. We analyze the three-wave mixing interaction between the optical and traveling acoustic modes that participate in forward Brillouin scattering, and reveal the key regimes of operation for the process. Our calculations indicate that measurable cooling may occur in a system having phonons with spatial loss rate that is of the same order as the spatial optical loss rate. If the Brillouin gain in such a waveguide reaches the order of 10$^{5}$ m$^{-1}$W$^{-1}$, appreciable cooling of phonon modes may be observed with modest pump power of a few mW.

preprint2015arXiv

Raman Cooling of Solids through Photonic Density of States Engineering

The laser cooling of vibrational states of solids has been achieved through photoluminescence in rare-earth elements, optical forces in optomechanics, and the Brillouin scattering light-sound interaction. The net cooling of solids through spontaneous Raman scattering, and laser refrigeration of indirect band gap semiconductors, both remain unsolved challenges. Here, we analytically show that photonic density of states (DoS) engineering can address the two fundamental requirements for achieving spontaneous Raman cooling: suppressing the dominance of Stokes (heating) transitions, and the enhancement of anti-Stokes (cooling) efficiency beyond the natural optical absorption of the material. We develop a general model for the DoS modification to spontaneous Raman scattering probabilities, and elucidate the necessary and minimum condition required for achieving net Raman cooling. With a suitably engineered DoS, we establish the enticing possibility of refrigeration of intrinsic silicon by annihilating phonons from all its Raman-active modes simultaneously, through a single telecom wavelength pump. This result points to a highly flexible approach for laser cooling of any transparent semiconductor, including indirect band gap semiconductors, far away from significant optical absorption, band-edge states, excitons, or atomic resonances.