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Yibin Hu

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Published work

7 published item(s)

preprint2026arXiv

Insider Attacks in Multi-Agent LLM Consensus Systems

Large language models (LLMs) are increasingly deployed in multi-agent systems where agents communicate in natural language to solve tasks jointly. A key capability in such systems is consensus formation, where agents iteratively exchange messages and update decisions to reach a shared outcome. However, most existing multi-agent LLM frameworks assume that all participating agents are aligned with the system objective. In practice, a malicious insider may participate as a legitimate member of the group while pursuing a hidden adversarial goal. In this work, we study insider manipulation in multi-agent LLM consensus systems. We formalize the problem as a sequential decision-making task in which a malicious agent seeks to delay or prevent agreement among benign agents. To make attack optimization tractable, we propose a world-model-based framework that learns surrogate dynamics over the latent behavioral states of benign agents and then trains an attacker using reinforcement learning based on this learned model. Preliminary results show that the trained attacker reduces the benign consensus rate and prolongs disagreement more effectively than the direct malicious-prompt baseline. These results suggest that combining latent world models with reinforcement learning is a promising direction for adaptive insider attacks in language-based multi-agent systems.

preprint2020arXiv

Largely enhanced photogalvanic effects in the phosphorene photodetector by strain-increased device asymmetry

Photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of the open-circuit voltage that is much larger than the bandgap, making it rather attractive in solar cells. However, the magnitude of the PGE photocurrent is usually small, which severely hampers its practical application. Here we propose a mechanism to largely enhance the PGE photocurrent by mechanical strain based on the quantum transport simulations for the two-dimensional nickel-phosphorene-nickel photodetector. Broadband PGE photocurrent governed by the Cs noncentrosymmetry is generated at zero bias under the illumination of linearly polarized light. The photocurrent depends linearly on the device asymmetry, while nonlinearly on the optical absorption. By applying the appropriate mechanical tension stress on the phosphorene, the photocurrent can be substantially enhanced by up to 3 orders of magnitude, which is primarily ascribed to the largely increased device asymmetry. The change in the optical absorption in some cases can also play a critical role in tuning the photocurrent due to the nonlinear dependence. Moreover, the photocurrent can even be further enhanced by the mechanical bending, mainly owing to the considerably enhanced device asymmetry. Our results reveal the dependence of the PGE photocurrent on the device asymmetry and absorption in transport process through a device, and also explore the potentials of the PGE in the self-powered low-dimensional flexible optoelectronics.

preprint2020arXiv

Tunable giant magnetoresistance in a single-molecule junction

Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the magnetic ion centers fundamentally impact the transport through the molecules. Here we demonstrate that the electron pathway in a single-molecule device can be selected between two molecular orbitals by varying a magnetic field, giving rise to a tunable anisotropic magnetoresistance up to 93%. The unique tunability of the electron pathways is due to the magnetic reorientation of the transition metal center, resulting in a re-hybridization of molecular orbitals. We obtain the tunneling electron pathways by Kondo effect, which manifests either as a peak or a dip line shape. The energy changes of these spin-reorientations are remarkably low and less than one millielectronvolt. The large tunable anisotropic magnetoresistance could be used to control electronic transport in molecular spintronics.

preprint2016arXiv

Low conductance of the nickel atomic junctions in hydrogen atmosphere

The low conductance of nickel atomic junctions in the hydrogen environment is studied using the nonequilibrium Green's function theory combined with first-principles calculations. The Ni junction bridged by a $H_2$ molecule has a conductance of approximately 0.7 $G_0$. This conductance is contributed by the anti-bonding state of the $H_2$ molecule, which forms a bonding state with the $3d$ orbitals of the nearby Ni atoms. In contrast, the Ni junction bridged by the two single H atoms has a conductance of approximately 1 $G_0$, which is weakly spin-polarized. The spin-up channels were found to contribute mostly to the conductance at a small junction gap, while the spin-down channels play a dominant role at a larger junction gap.

preprint2012arXiv

First-principles Analysis of Photo-current in Graphene PN Junctions

We report a first principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. Non-equilibrium Green's function (NEGF) formalism combined with density functional theory (DFT) is applied to calculate the photo-response function. The graphene PN junctions show a broad band photo-response including the terahertz range. The dependence of the response on the angle between the light polarization vector and the PN interface is determined. Its variation against photon energy $E_{ph}$ is calculated in the visible range. The essential properties of chemically doped and gate-controlled PN junctions are similar, but the former shows fingerprints of dopant distribution.

preprint2012arXiv

Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations

We report \textit{ab initio} simulations of quantum transport properties of Fe/MgO/Fe trilayer structures with FeO$_{0.5}$ buffer iron oxide layer, where on-site Coulomb interaction is explicitly taken into account by local density approximation + Hubbard \textit{U} approach. We show that on-site Coulomb repulsion in the iron-oxygen layer can cause a dramatic drop of the tunnel magnetoresistance of the system. We present an understanding of microscopic details of this phenomenon, connecting it to localization of the Fermi electrons of particular symmetry, which takes place in the buffer Fe-O layer, when on-site Coulomb repulsion is introduced. We further study the possible influence of the symmetry reduction in the buffer Fe-O layer on the transport properties of the Fe/MgO/Fe interface.

preprint2012arXiv

Robustness of the helical edge states in topological insulators

Topological insulators (TI) are materials having an energy band gap in the bulk and conducting helical electronic states on the surface. The helical states are protected by time reversal symmetry thus are expected to be robust against static disorder scattering. In this work we report atomistic first principles analysis of disorder scattering in two-probe transport junctions made of three dimensional TI material Bi2Se3. The robustness of the device against disorder scattering is determined quantitatively. Examining many different scattering configurations, a general trend emerges on how strong the perturbing potential and how it is spatially distributed that can derail the helical states on the Bi2Se3 surfaces.