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Yi-Ting Wang

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5 publications

preprint2022arXiv

Critical behavior in the Mn5_{5}Ge3_{3} ferromagnet

High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn5 _{5}Ge3_{3} used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents β=0.336±0.001 β=0.336 \pm 0.001 with a critical temperature Tc=300.29±0.01 T_{c}=300.29 \pm 0.01 K and γ=1.193±0.003 γ=1.193 \pm 0.003 with Tc=300.15±0.05 T_{c} = 300.15 \pm 0.05 K are obtained by the modified Arrott plot, whereas δ=4.61±0.03 δ= 4.61 \pm 0.03 is deduced by a critical isotherm analysis at Tc=300 T_{c} = 300 K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn5 _{5}Ge3_{3} exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as J(r)≈r−4.855 J(r)\approx r^{-4.855} and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn5 _{5} Ge3 _{3} results in a small deviation of obtained critical exponents from those for standard 3D-Ising model.

preprint2022arXiv

Large anomalous Hall effect in layered antiferromagnet Co0.29_{0.29}TaS2_2

We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co0.29_{0.29}TaS2_{2}. Of particular interests in Co0.29_{0.29}TaS2_{2} are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co0.29_{0.29}TaS2_{2} undergoes two transitions at Tt1∼_{t1}\sim 38.3 K and Tt2∼_{t2}\sim 24.3 K. Once the magnetic field is applied, another transition Tt3∼_{t3}\sim 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within Ht1∼±_{t1}\sim\pm 6.9 T is observed, which decreases with increasing temperature and eventually disappears at Tt2_{t2}. Besides, Co0.29_{0.29}TaS2_{2} displays step-like behavior as another magnetic transition around Ht2∼±_{t2}\sim\pm 4 T, which exists until ∼\sim Tt1_{t1}. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co0.29_{0.29}TaS2_{2}, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of Rs_{s}/R0∼105_{0}\sim 10^{5}, considering that the tiny net magnetization (0.0094μBμ_{B}/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within Ht1_{t1}. The abrupt change at Ht2_{t2} below Tt1_{t1}, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co0.29_{0.29}TaS2_{2}.

preprint2012arXiv

Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields

Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition from the insulator to QH liquid when the observed almost temperature-independent Hall slope indicates insignificant interaction correction. Our study shows that the existence of SdH oscillations in such a transition can be understood based on the non-interacting model.

preprint2012arXiv

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting

We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting.

preprint2010arXiv

Probing onset of strong localization and electron-electron interactions with the presence of direct insulator-quantum Hall transition

We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition with increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects to the observed transition in our study.

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