BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Yi Cui

Yi Cui appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conArtificial IntelligenceCryptography and Securityeess.SYphysics.comp-phSystems and Control

Catalog footprint

What is connected

27works
9topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

27 published item(s)

preprint2022arXiv

Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$

Several recent studies have shown that the anisotropy in the magnetic structure of \ECA\ plays a significant role in stabilizing the Weyl nodes. To investigate the relationship between magnetic anisotropy and Weyl physics, we present a comparative study between EuZn$_2$As$_2$ and EuCd$_2$As$_2$ that are isostructural but with different magnetic anisotropy. We performed structural analysis, electronic transport, and magnetization experiments on millimeter-sized single crystals of EuZn$_2$As$_2$, and compared the results to those of EuCd$_2$As$_2$. By combining the first principle calculations and neutron diffraction experiment, we identify the magnetic ground state of EuZn$_2$As$_2$ as A-type antiferromagnetic order with a transition temperature ($T_\mathrm{N}$ = 19.6 K) twice that of EuCd$_2$As$_2$. Like EuCd$_2$As$_2$, the negative magnetoresistance of EuZn$_2$As$_2$ is observed after suppressing the resistivity peak at $T_\mathrm{N}$ with increasing fields. However, the anisotropy in both transport and magnetization are much reduced in EuZn$_2$As$_2$. The difference could be ascribed to the weaker spin-orbit coupling, more localized $d$-orbitals, and a larger contribution from the Eu $s$-orbitals in the zinc compound, as suggested by the electronic band calculations. The same band structure effect could be also responsible for the observation of a smaller non-linear anomalous Hall effect in EuZn$_2$As$_2$ compared to EuCd$_2$As$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Build Smart Grids on Artificial Intelligence -- A Real-world Example

Power grid data are going big with the deployment of various sensors. The big data in power grids creates huge opportunities for applying artificial intelligence technologies to improve resilience and reliability. This paper introduces multiple real-world applications based on artificial intelligence to improve power grid situational awareness and resilience. These applications include event identification, inertia estimation, event location and magnitude estimation, data authentication, control, and stability assessment. These applications are operating on a real-world system called FNET-GridEye, which is a wide-area measurement network and arguably the world-largest cyber-physical system that collects power grid big data. These applications showed much better performance compared with conventional approaches and accomplished new tasks that are impossible to realized using conventional technologies. These encouraging results demonstrate that combining power grid big data and artificial intelligence can uncover and capture the non-linear correlation between power grid data and its stabilities indices and will potentially enable many advanced applications that can significantly improve power grid resilience.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Field-induced antiferromagnetism and Tomonaga-Luttinger liquid behavior in the quasi-one-dimensional Ising-Antiferromagnet SrCo2V2O8

We investigate the low-temperature properties of the Ising-like screw chain antiferromagnet SrCo$_2$V$_2$O$_8$ under a longitudinal magnetic field by susceptibility and $^{51}$V NMR measurements. The bulk susceptibility $χ$ shows an onset of long-range Ising-antiferromagnetic (AFM) order and the suppression of the order by field with the Néel temperature dropped from 5.1~K to 2~K when field increases from 0.1~T to 4~T. The suppression of the AFM order by the field is also observed by the NMR spectra and the spin-lattice relaxation $1/T_1$. At fields above 4~T, $χ$ shows a low-temperature upturn, which is consistent with the onset of a transverse antiferromagnetic order as supported by the quantum Monte Carlo simulations. A line splitting in the NMR spectra is also observed at high temperatures. We show that the line split characterizes the onset of a short-range transverse antiferromagnetic order with magnetic moments orientated along the crystalline [110]/[1$\bar1$0] directions. The $1/T_1$ data at higher temperature show a power-law behavior $1/T_1{\sim}T^α$, which is consistent with the Tomonaga-Luttinger-liquid behavior. With increasing the field, the power-law exponent $α$ changes from negative to positive, which clearly shows an inversion of the Luttinger exponent $η$, where the dominant low-energy spin fluctuations switch from the longitudinal type to the transverse type at a high field of 7~T.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pressure-induced superconductivity in flat-band Kagome compounds Pd$_3$P$_2$(S$_{1-x}$Se$_x$)$_8$

We performed high-pressure transport studies on the flat-band Kagome compounds, Pd$_3$P$_2$(S$_{1-x}$Se$_x$)$_8$ ($x$ = 0, 0.25), with a diamond anvil cell. For both compounds, the resistivity exhibits an insulating behavior with pressure up to 17 GPa. With pressure above 20 GPa, a metallic behavior is observed at high temperatures in Pd$_3$P$_2$S$_8$, and superconductivity emerges at low temperatures. The onset temperature of superconducting transition $T_{\rm C}$ rises monotonically from 2 K to 4.8 K and does not saturate with pressure up to 43 GPa. For the Se-doped compound Pd$_3$P$_2$(S$_{0.75}$Se$_{0.25}$)$_8$, the $T_{\rm C}$ is about 1.5 K higher than that of the undoped one over the whole pressure range, and reaches 6.4 K at 43 GPa. The upper critical field with field applied along the $c$ axis at typical pressures is about 50$\%$ of the Pauli limit, suggesting a 3D superconductivity. The Hall coefficient in the metallic phase is low and exhibits a peaked behavior at about 30 K, which suggests either a multi-band electronic structure or an electron correlation effect in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Using EBGAN for Anomaly Intrusion Detection

As an active network security protection scheme, intrusion detection system (IDS) undertakes the important responsibility of detecting network attacks in the form of malicious network traffic. Intrusion detection technology is an important part of IDS. At present, many scholars have carried out extensive research on intrusion detection technology. However, developing an efficient intrusion detection method for massive network traffic data is still difficult. Since Generative Adversarial Networks (GANs) have powerful modeling capabilities for complex high-dimensional data, they provide new ideas for addressing this problem. In this paper, we put forward an EBGAN-based intrusion detection method, IDS-EBGAN, that classifies network records as normal traffic or malicious traffic. The generator in IDS-EBGAN is responsible for converting the original malicious network traffic in the training set into adversarial malicious examples. This is because we want to use adversarial learning to improve the ability of discriminator to detect malicious traffic. At the same time, the discriminator adopts Autoencoder model. During testing, IDS-EBGAN uses reconstruction error of discriminator to classify traffic records.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

On the nature of valence charge and spin excitations via multi-orbital Hubbard models for infinite-layer nickelates

Building upon the recent progress on the intriguing underlying physics for the newly discovered infinite-layer nickelates, in this article we review an examination of valence charge and spin excitations via multi-orbital Hubbard models as way to determine the fundamental building blocks for Hamiltonians that can describe the low energy properties of infinite-layer nickelates. We summarize key results from density-functional approaches, and apply them to the study of x-ray absorption to determine the valence ground states of infinite-layer nickelates in their parent form, and show that a fundamental $d^9$ configuration as in the cuprates is incompatible with a self-doped ground state having holes in both $d_{x^2-y^2}$ and a rare-earth-derived axial orbital. When doped, we determine that the rare-earth-derived orbitals empty and additional holes form low spin $(S=0)$ $d^8$ Ni states, which can be well-described as a doped single-band Hubbard model. Using exact diagonalization for a 2-orbital model involving Ni and rare earth orbitals, we find clear magnons at 1/2 filling that persist when doped, albeit with larger damping, and with a dependence on the precise orbital energy separation between the Ni- and rare-earth-derived orbitals. Taken together, a full two-band model for infinite-layer nickelates can well describe the valence charge and spin excitations observed experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Aspects of the Synthesis of Thin Film Superconducting Infinite-Layer Nickelates

The recent observation of superconductivity in Nd$_{0.8}$Sr$_{0.2}$NiO$_{2}$ calls for further investigation and optimization of the synthesis of this metastable infinite-layer nickelate structure. Here, we present our current understanding of important aspects of the growth of the parent perovskite compound via pulsed laser deposition on SrTiO$_{3}$ (001) substrates, and the subsequent topotactic reduction. We find that to achieve single-crystalline, single-phase superconducting Nd$_{0.8}$Sr$_{0.2}$NiO$_{2}$, it is essential that the precursor perovskite Nd$_{0.8}$Sr$_{0.2}$NiO$_{3}$ thin film is stabilized with high crystallinity and no impurity phases; in particular, a Ruddlesden-Popper-type secondary phase is often observed. We have further investigated the evolution of the soft-chemistry topotactic reduction conditions to realize full transformation to the infinite-layer structure with no film decomposition or formation of other phases. We find that capping the nickelate film with a subsequent SrTiO$_{3}$ layer provides an epitaxial template to the top region of the nickelate film, much like the substrate. Thus, for currently optimized growth conditions, we can stabilize superconducting single-phase Nd$_{0.8}$Sr$_{0.2}$NiO$_{2}$ (001) epitaxial thin films up to ~ 10 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction

The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate a linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field induced by gating in black phosphorus transistors can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the efficiency and performance for linear dichroism photodetection. This provides new functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Pressure induced metallization with absence of structural transition in layered MoSe2

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ~ 60 GPa using multiple experimental techniques and ab -initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrically Tunable Optical Absorption in a Graphene-based Salisbury Screen

We demonstrate a graphene-based Salisbury screen consisting of a single layer of graphene placed in close proximity to a gold back reflector. The light absorption in the screen can be actively tuned by electrically gating the carrier density in the graphene layer with an ionic liquid/gel. The screen was designed to achieve maximum absorption at a target wavelength of 3.2 micrometer by using a 600 nm-thick, non-absorbing silica spacer layer. Spectroscopic reflectance measurements were performed in-situ as a function of gate bias. The changes in the reflectance spectra were analyzed using a Fresnel based transfer matrix model in which graphene was treated as an infinitesimally thin sheet with conductivity given by the Kubo formula. Temporal coupled mode theory was employed to analyze and intuitively understand the observed absorption changes in the Salisbury screen. We achieved ~ 6 % change in the optical absorption of graphene by tuning the applied gate bias from 0.8 V to 2.6 V, where 0.8 V corresponds to graphene's charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC), the non-equilibrium charge carrier imbalance between two degenerate and inequivalent valleys to realize valley/spin polarization has been successfully demonstrated theoretically and supported by optical experiments. However, the generation of a valley/spin current by the valley polarization in MX2 remains elusive and a great challenge. Here, within an electric-double-layer transistor based on WSe2, we demonstrated a spin-coupled valley photocurrent whose direction and magnitude depend on the degree of circular polarization of the incident radiation and can be further greatly modulated with an external electric field. Such room temperature generation and electric control of valley/spin photocurrent provides a new property of electrons in MX2 systems, thereby enabling new degrees of control for quantum-confined spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

One-dimensional helical transport in topological insulator nanowire interferometers

The discovery of three-dimensional (3D) topological insulators opens a gateway to generate unusual phases and particles made of the helical surface electrons, proposing new applications using unusual spin nature. Demonstration of the helical electron transport is a crucial step to both physics and device applications of topological insulators. Topological insulator nanowires, of which spin-textured surface electrons form 1D band manipulated by enclosed magnetic flux, offer a unique nanoscale platform to realize quantum transport of spin-momentum locking nature. Here, we report an observation of a topologically protected 1D mode of surface electrons in topological insulator nanowires existing at only two values of half magnetic quantum flux ($\pm$h/2e) due to a spin Berry's phase ($π$). The helical 1D mode is robust against disorder but fragile against a perpendicular magnetic field breaking time-reversal-symmetry. This result demonstrates a device with robust and easily accessible 1D helical electronic states from 3D topological insulators, a unique nanoscale electronic system to study topological phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

First-principles Approaches to Simulate Lithiation in Silicon Electrodes

Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene-Wrapped Sulfur Particles as a Rechargeable Lithium-Sulfur-Battery Cathode Material with High Capacity and Cycling Stability

We report the synthesis of a graphene-sulfur composite material by wrapping polyethyleneglycol (PEG) coated submicron sulfur particles with mildly oxidized graphene oxide sheets decorated by carbon black nanoparticles. The PEG and graphene coating layers are important to accommodating volume expansion of the coated sulfur particles during discharge, trapping soluble polysulfide intermediates and rendering the sulfur particles electrically conducting. The resulting graphene-sulfur composite showed high and stable specific capacities up to ~600mAh/g over more than 100 cycles, representing a promising cathode material for rechargeable lithium batteries with high energy density.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

LiMn1-xFexPO4 Nanorods Grown on Graphene Sheets for Ultra-High Rate Performance Lithium Ion Batteries

Following the successful utilization of LiFePO4 as a novel cathode material for rechargeable lithium batteries, interest and efforts have grown in the research of another olivine structured material LiMnPO4 due to its higher operating potential voltage and energy density. However, high rate performance for LiMnPO4-based cathode materials has been challenging due to its extremely low electrical and ionic conductivities. Here, we develop a synthesis of Fe-doped LiMnPO4 (LiMn0.75Fe0.25PO4) nanorods directly bonded on graphene sheets (reduced from graphene oxide) to render LiMn0.75Fe0.25PO4 nanorods superior electrical conductivity. The LiMn0.75Fe0.25PO4 nanorod morphology is unique to materials grown on graphene over those grown in free solution, and is ideal for fast Li+ diffusion with the diffusion path of [010] crystallographic axis along the short radial direction (~20-30nm) of the nanorods. These together lead to ultrafast discharge within ~30-40 seconds without using a high carbon content. With high columbic efficiency above 99.5% at a high operating voltage, our LiMn0.75Fe0.25PO4 nanorods/graphene hybrid exhibits the best rate performance among all doped LiMnPO4 cathode materials for Lithium ion batteries.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons

A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI materials Bi2Se3, Bi2Te3 and Sb2Te3 are TI with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependant color and contrast for nanoplates grown on oxidized silicon (300nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface states effects in transport measurements. Low temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically-doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ~ 2%, low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mn3O4-Graphene Hybrid as a High Capacity Anode Material for Lithium Ion Batteries

We developed two-step solution-phase reactions to form hybrid materials of Mn3O4 nanoparticles on reduced graphene oxide (RGO) sheets for lithium ion battery applications. Mn3O4 nanoparticles grown selectively on RGO sheets over free particle growth in solution allowed for the electrically insulating Mn3O4 nanoparticles wired up to a current collector through the underlying conducting graphene network. The Mn3O4 nanoparticles formed on RGO show a high specific capacity up to ~900mAh/g near its theoretical capacity with good rate capability and cycling stability, owing to the intimate interactions between the graphene substrates and the Mn3O4 nanoparticles grown atop. The Mn3O4/RGO hybrid could be a promising candidate material for high-capacity, low-cost, and environmentally friendly anode for lithium ion batteries. Our growth-on-graphene approach should offer a new technique for design and synthesis of battery electrodes based on highly insulating materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy

Ultra-thin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak Van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (> 50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultra-thin nanoribbons, showing drastic difference in sheet resistance between 1~2 QLs and 4~5 QLs. Transport measurement carried out on an exfoliated (\leq 5 QLs) Bi2Se3 device shows non-metallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (> 50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Aharonov-Bohm interference in topological insulator nanoribbons

Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface and verified by angle-resolved photoemission spectroscopy experiments. Here, we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coverage of two-dimensional electrons on the entire surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation and its temperature dependence demonstrate the robustness of these electronic states. Our results suggest that topological insulator nanoribbons afford novel promising materials for future spintronic devices at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors, colossal magnetoresistance effect, phase-change memories, and domain switching operations. Direct imaging on dielectric properties of these local phases, however, presents a big challenge for existing scanning probe techniques. Here, we report the observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons by near-field scanning microwave impedance microscopy. Multiple phases with local resistivity spanning six orders of magnitude are identified as the coexistence of superlattice, simple hexagonal lattice and amorphous structures with 100nm inhomogeneous length scale, consistent with high-resolution transmission electron microscope studies. The atomic-force-microscope-compatible microwave probe is able to perform quantitative sub-surface electronic study in a noninvasive manner. Finally, the phase change memory function in In2Se3 nanoribbon devices can be locally recorded with big signal of opposite signs.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Topological Insulator Nanowires and Nanoribbons

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se3 nanomaterials with a variety of morphologies. The synthesis of Bi2Se3 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ~ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

0 citations0 reviewsNo code linkedOpen access