Researcher profile

Yejun Feng

Yejun Feng contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2019arXiv

Approaching the quantum critical point in a highly-correlated all-in-all-out antiferromagnet

Continuous quantum phase transitions involving all-in-all-out (AIAO) antiferromagnetic order in strongly spin-orbit-coupled 5d compounds could give rise to various exotic electronic phases and strongly-coupled quantum critical phenomena. Here we experimentally trace the AIAO spin order in Sm2Ir2O7 using direct resonant x-ray magnetic diffraction techniques under high pressure. The magnetic order is suppressed at a critical pressure Pc=6.30 GPa, while the lattice symmetry remains in the cubic Fd-3m space group across the quantum critical point. Comparing pressure tuning and the chemical series R2Ir2O7 reveals that the suppression of the AIAO order and the approach to the spin-disordered state is characterized by contrasting evolutions of both the pyrochlore lattice constant a and the trigonal distortion x. The former affects the 5d bandwidth, the latter the Ising anisotropy, and as such we posit that the opposite effects of pressure and chemical tuning lead to spin fluctuations with different Ising and Heisenberg character in the quantum critical region. Finally, the observed low-pressure scale of the AIAO quantum phase transition in Sm2Ir2O7 identifies a circumscribed region of P-T space for investigating the putative magnetic Weyl-semimetal state.

preprint2019arXiv

Odd-parity linear magnetoresistance and the planar Hall effect

The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager's theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic layers at domain walls, which both exhibit odd-parity magnetoresistive behavior. The peculiar angular variation of the response with respect to the relative alignments of the magnetization, magnetic field, and current reveal the two underlying microscopic mechanisms: spin-polarization-dependent scattering of a Zeeman-shifted Fermi surface and magnetoresistance driven by the anomalous velocity physics usually associated with the anomalous Hall effect.