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Researcher profile

Yaxian Wang

Yaxian Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-elphysics.comp-phquant-ph

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Published work

6 published item(s)

preprint2021arXiv

Finite-size effects of electron transport in PdCoO$_2$

A wide range of unconventional transport phenomena have recently been observed in single-crystal delafossite metals. Here, we present a theoretical framework to elucidate electron transport using a combination of first-principles calculations and numerical modeling of the anisotropic Boltzmann transport equation. Using PdCoO$_2$ as a model system, we study different microscopic electron and phonon scattering mechanisms and establish the mean free path hierarchy of quasiparticles at different temperatures. We treat the anisotropic Fermi surface explicitly to numerically obtain experimentally-accessible transport observables, which bridge between the "diffusive", "ballistic", and "hydrodynamic" transport regime limits. We illustrate that distinction between the "quasi-ballistic", and "quasi-hydrodynamic" regimes is challenging and often needs to be quantitative in nature. From first-principles calculations, we populate the resulting transport regime plots, and demonstrate how the Fermi surface orientation adds complexity to the observed transport signatures in micro-scale devices. Our work provides key insights into microscopic interaction mechanisms on open hexagonal Fermi surfaces and establishes their connection to the macroscopic electron transport in finite-size channels.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Generalized Design Principles for Hydrodynamic Electron Transport in Anisotropic Metals

Interactions of charge carriers with lattice vibrations, or phonons, play a critical role in unconventional electronic transport of metals and semimetals. Recent observations of phonon-mediated collective electron flow in bulk semimetals, termed electron hydrodynamics, present new opportunities in the search for strong electron-electron interactions in high carrier density materials. Here we present the general transport signatures of such a second-order scattering mechanism, along with analytical limits at the Eliashberg level of theory. We study electronic transport, using $ab$ $initio$ calculations, in finite-size channels of semimetallic ZrSiS and TaAs$_2$ with and without topological band crossings, respectively. The order of magnitude separation between momentum-relaxing and momentum-conserving scattering length-scales across a wide temperature range make both of them promising candidates for further experimental observation of electron hydrodynamics. More generally, our calculations show that the hydrodynamic transport regime can be realized in a much broader class of anisotropic metals and does not, to first order, rely on the topological nature of the bands. Finally, we discuss general design principles guiding future search for hydrodynamic candidates, based on the analytical formulation and our $ab$ $initio$ predictions. We find that systems with strong electron-phonon interactions, reduced electronic phase space, and suppressed phonon-phonon scattering at temperatures of interest are likely to feature hydrodynamic electron transport. We predict that layered and/or anisotropic semimetals composed of half-filled $d$-shells and light group V/VI elements with lower crystal symmetry are ideal candidates to observe hydrodynamic phenomena in future.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Native point defects from stoichiometry-linked chemical potentials in cubic boron arsenide

The presence of a point defect typically breaks the stoichiometry in a semiconductor. For example, a vacancy on an A-site in an AB compound makes the crystal B-rich. As the stoichiometry changes, so do the chemical potentials. While the prevalent first-principles methods have provided significant insight into characters of point defects in a transparent manner, the crucial connection between crystal stoichiometry and chemical potentials is usually not made. However, ad hoc choices for chemical potentials can lead to nonphysical negative formation energies in some Fermi level ranges, along with questions about charge balance. Herein, we formulate a canonical framework describing how the chemical potential of each element is directly linked to the composition of the crystal under (off-)stoichiometric conditions instead of the ad hoc assumption that the chemical potential is the elemental limit under a certain growth condition. Consequently, the chemical potential changes with the Fermi level within the band gap, and the formation energies are positive. Using such an approach, we present $ab$ $initio$ results for native point defects in BAs, a semiconductor with ultra-high room temperature thermal conductivity. We find that antisites are the constitutional defects in off-stoichiometric material, while B$_\mathrm{As}$ antisites and B vacancies dominate in the stoichiometric material. We further discuss the thermodynamic equilibrium and charge neutrality point in BAs in light of our stoichiometry-determined chemical potentials. As discussed, our work offers a more applicable and accessible approach to tackle defect formation energies in semiconductors, especially the ones with wide gap where negative formation energies are commonly seen.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Non-Linear Arrhenius Behavior of Self-Diffusion in $β$-Ti and Mo

While anomalous diffusion coefficients with non-Arrhenius like temperature dependence are observed in a number of metals, a conclusive comprehensive framework of explanation has not been brought forward to date. Here, we use first-principles calculations based on density functional theory to calculate self-diffusion coefficients in the bcc metals Mo and $β$-Ti by coupling quasiharmonic transition state theory and large displacement phonon calculations and show that anharmonicity from thermal expansion is the major reason for the anomalous temperature dependence. We use a modified Debye approach to quantify the thermal expansion over the entire temperature range and introduce a method to relax the vacancy structure in a mechanically unstable crystal such as $β$-Ti. Thermal expansion is found to weakly affect the activation enthalpy but has a strong effect on the prefactor of the diffusion coefficient, reproducing the non-linear, non-Arrhenius "anomalous" self-diffusion in both bcc systems with good agreement between calculation and experiment. The proposed methodology is general and simple enough to be applicable to other mechanically unstable crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic Scattering in Goniopolar Metal NaSn$_2$As$_2$

Recent experimental discoveries in axis-dependent conduction polarity, or goniopolarity, have observed that the charge carriers can conduct like either electrons or holes depending on the crystallographic direction they travel along in layered compounds such as NaSn$_2$As$_2$. To elucidate this unusual transport behavior, we present an ab initio study of electron scattering in such systems. We study different microscopic scattering mechanisms in NaSn$_2$As$_2$ and present the electron-phonon scattering time distribution on its Fermi surface in momentum space, the anisotropy of which is proposed to be the origin of the axis-dependent conduction polarity. Further, we obtain the overall anisotropic lifetime tensors in real space at different electron chemical potentials and temperatures and discuss how they contribute to the macroscopic thermopower. While we find that the contribution of the in-plane and cross plane lifetimes exhibits a similar trend, the concave portion of the Fermi surface alters the electron motion significantly in the presence of a magnetic field, thus flipping the conduction polarity as measured via the Hall effect. Our calculations and analysis of NaSn$_2$As$_2$ also suggests the strong possibility of hydrodynamic electron flow in the system. Finally, our work has implications for anisotropic electron lifetimes in a broad class of goniopolar materials and provides key, general insights into electron scattering on open Fermi surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evidence for dominant phonon-electron scattering in Weyl semimetal WP$_{2}$

Topological semimetals have revealed a wide array of novel transport phenomena, including electron hydrodynamics, quantum field theoretic anomalies, and extreme magnetoresistances and mobilities. However, the scattering mechanisms central to these behaviors remain largely unexplored. Here we reveal signatures of significant phonon-electron scattering in the type-II Weyl semimetal WP$_{2}$ via temperature-dependent Raman spectroscopy. Over a large temperature range, we find that the decay rates of the lowest energy $A_{1}$ modes are dominated by phonon-electron rather than phonon-phonon scattering. In conjunction with first-principles calculations, a combined analysis of the momentum, energy, and symmetry-allowed decay paths indicates this results from intraband scattering of the electrons. The excellent agreement with theory further suggests that such results could be true for the acoustic modes. We thus provide evidence for the importance of phonons in the transport properties of topological semimetals and identify specific properties that may contribute to such behavior in other materials.

0 citations0 reviewsNo code linkedOpen access