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Yann Magnin

Yann Magnin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.stat-mechphysics.atm-clusphysics.atom-phphysics.chem-phphysics.comp-phquant-ph

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Published work

8 published item(s)

preprint2023arXiv

Modelling Carbon Capture on Metal-Organic Frameworks with Quantum Computing

Despite the recent progress in quantum computational algorithms for chemistry, there is a dearth of quantum computational simulations focused on material science applications, especially for the energy sector, where next generation sorbing materials are urgently needed to battle climate change. To drive their development, quantum computing is applied to the problem of CO$_2$ adsorption in Al-fumarate Metal-Organic Frameworks. Fragmentation strategies based on Density Matrix Embedding Theory are applied, using a variational quantum algorithm as a fragment solver, along with active space selection to minimise qubit number. By investigating different fragmentation strategies and solvers, we propose a methodology to apply quantum computing to Al-fumarate interacting with a CO$_2$ molecule, demonstrating the feasibility of treating a complex porous system as a concrete application of quantum computing. Our work paves the way for the use of quantum computing techniques in the quest of sorbents optimisation for more efficient carbon capture and conversion applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Size dependent phase diagrams of Nickel-Carbon nanoparticles

The carbon rich phase diagrams of nickel-carbon nanoparticles, relevant to catalysis and catalytic chemical vapor deposition synthesis of carbon nanotubes, are calculated for system sizes up to about 3 nanometers (807 Ni atoms). A tight binding model for interatomic interactions drives the Grand Canonical Monte Carlo simulations used to locate solid, core/shell and liquid stability domains, as a function of size, temperature and carbon chemical potential or concentration. Melting is favored by carbon incorporation from the nanoparticle surface, resulting in a strong relative lowering of the eutectic temperature and a phase diagram topology different from the bulk one. This should be taken into account in our understanding of the nanotube growth mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe

We investigate in this paper properties of the spin resistivity in the magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with the Néel temperature around 310K. Due to this high Néel temperature, there are many applications using its magnetic properties. The method we use here is the Monte Carlo simulation in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the Néel temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin transport in magnetically ordered systems: effect of the lattice relaxation time

Spin resistivity $R$ has been shown to result mainly from the scattering of itinerant spins with magnetic impurities and lattice spins. $R$ is proportional to the spin-spin correlation so that its behavior is very complicated near and at the magnetic phase transition of the lattice spins. For the time being there are many new experimental data on the spin resistivity going from semiconductors to superconductors. Depending on materials, various behaviors have been observed. There is however no theory so far which gives a unified mechanism for spin resistivity in magnetic materials. Recently, we have showed Monte Carlo results for different systems. We found that the spin resistivity is very different from one material to another. In this paper, we show for the first time how the dynamic relaxation time of the lattice spins affects the resistivity of itinerant spins observed in Monte Carlo simulation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Monte Carlo Study of the Spin Transport in Magnetic Materials

The resistivity in magnetic materials has been theoretically shown to depend on the spin-spin correlation function which in turn depends on the magnetic-field, the density of conduction electron, the magnetic ordering stability, etc. However, these theories involved a lot of approximations, so their validity remained to be confirmed. The purpose of this work is to show by extensive Monte Carlo (MC) simulation the resistivity of the spin current from low-$T$ ordered phase to high-$T$ paramagnetic phase in a ferromagnetic film. We take into account the interaction between the itinerant spins and the localized lattice spins as well as the interaction between itinerant spins themselves. We show that the resistivity undergoes an anomalous behavior at the magnetic phase transition in agreement with previous theories in spite of their numerous approximations. The origin of the resistivity peak near the phase transition in ferromagnets is interpreted here as stemming from the existence of magnetic domains in the critical region. This interpretation is shown to be in consistence with previous theoretical pictures. Resistivity in a simple cubic antiferromagnet is also shown. The absence of a peak in this case is explained.

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preprint2010arXiv

Spin Resistivity in Frustrated Antiferromagnets

In this paper we study the spin transport in frustrated antiferromagnetic FCC films by Monte Carlo simulation. In the case of Ising spin model, we show that the spin resistivity versus temperature exhibits a discontinuity at the phase transition temperature: an upward jump or a downward fall, depending on how many parallel and antiparallel localized spins interacting with a given itinerant spin. The surface effects as well as the difference of two degenerate states on the resistivity are analyzed. Comparison with non frustrated antiferromagnets is shown to highlight the frustration effect. We also show and discuss the results of the Heisenberg spin model on the same lattice.

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preprint2010arXiv

Spin Resistivity in the Frustrated $J_1-J_2$ Model

We study in this paper the resistivity encountered by Ising itinerant spins traveling in the so-called $J_1-J_2$ frustrated simple cubic Ising lattice. For the lattice, we take into account the interactions between nearest-neighbors and next-nearest-neighbors, $J_1$ and $J_2$ respectively. Itinerant spins interact with lattice spins via a distance-dependent interaction. We also take into account an interaction between itinerant spins. The lattice is frustrated in a range of $J_2$ in which we show that it undergoes a very strong first-order transition. Using Monte Carlo simulation, we calculate the resistivity $ρ$ of the itinerant spins and show that the first-order transition of the lattice causes a discontinuity of $ρ$.

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preprint2010arXiv

Theory and Simulation of Spin Transport in Antiferromagnetic Semiconductors: Application to MnTe

We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use here the Boltzmann's equation with numerical data on cluster distribution obtained by Monte Carlo simulations and cluster-construction algorithms. We study the cases of degenerate and non-degenerate semiconductors. The spin resistivity in both cases is shown to depend on the temperature with a broad maximum at the transition temperature of the lattice spin system. The shape of the maximum depends on the spin anisotropy and on the magnetic field. It shows however no sharp peak in contrast to ferromagnetic materials. Our method is applied to MnTe. Comparison to experimental data is given.

0 citations0 reviewsNo code linkedOpen access