Researcher profile

Isao Harada

Isao Harada contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2010arXiv

Monte Carlo Study of the Spin Transport in Magnetic Materials

The resistivity in magnetic materials has been theoretically shown to depend on the spin-spin correlation function which in turn depends on the magnetic-field, the density of conduction electron, the magnetic ordering stability, etc. However, these theories involved a lot of approximations, so their validity remained to be confirmed. The purpose of this work is to show by extensive Monte Carlo (MC) simulation the resistivity of the spin current from low-$T$ ordered phase to high-$T$ paramagnetic phase in a ferromagnetic film. We take into account the interaction between the itinerant spins and the localized lattice spins as well as the interaction between itinerant spins themselves. We show that the resistivity undergoes an anomalous behavior at the magnetic phase transition in agreement with previous theories in spite of their numerous approximations. The origin of the resistivity peak near the phase transition in ferromagnets is interpreted here as stemming from the existence of magnetic domains in the critical region. This interpretation is shown to be in consistence with previous theoretical pictures. Resistivity in a simple cubic antiferromagnet is also shown. The absence of a peak in this case is explained.

preprint2010arXiv

Theory and Simulation of Spin Transport in Antiferromagnetic Semiconductors: Application to MnTe

We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use here the Boltzmann's equation with numerical data on cluster distribution obtained by Monte Carlo simulations and cluster-construction algorithms. We study the cases of degenerate and non-degenerate semiconductors. The spin resistivity in both cases is shown to depend on the temperature with a broad maximum at the transition temperature of the lattice spin system. The shape of the maximum depends on the spin anisotropy and on the magnetic field. It shows however no sharp peak in contrast to ferromagnetic materials. Our method is applied to MnTe. Comparison to experimental data is given.