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Researcher profile

Yanfei Yang

Yanfei Yang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallmath.NAcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2022arXiv

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

A Joint Bidiagonalization Based Algorithm for Large Scale Linear Discrete Ill-posed Problems in General-Form Regularization

Based on the joint bidiagonalization process of a large matrix pair $\{A,L\}$, we propose and develop an iterative regularization algorithm for the large scale linear discrete ill-posed problems in general-form regularization: $\min\|Lx\| \ \mbox{\rm subject to} \ x\in\mathcal{S} = \{x|\ \|Ax-b\|\leq τ\|e\|\}$ with a Gaussian white noise $e$ and $τ>1$ slightly, where $L$ is a regularization matrix. Our algorithm is different from the hybrid one proposed by Kilmer {\em et al.}, which is based on the same process but solves the general-form Tikhonov regularization problem: $\min_x\left\{\|Ax-b\|^2+λ^2\|Lx\|^2\right\}$. We prove that the iterates take the form of attractive filtered generalized singular value decomposition (GSVD) expansions, where the filters are given explicitly. This result and the analysis on it show that the method must have the desired semi-convergence property and get insight into the regularizing effects of the method. We use the L-curve criterion or the discrepancy principle to determine $k^*$. The algorithm is simple and effective, and numerical experiments illustrate that it often computes more accurate regularized solutions than the hybrid one.

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preprint2014arXiv

Low Carrier Density Epitaxial Graphene Devices On SiC

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air.

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preprint2014arXiv

New rigorous perturbation bounds for the generalized Cholesky factorization

Some new rigorous perturbation bounds for the generalized Cholesky factorization with normwise or componentwise perturbations in the given matrix are obtained, where the componentwise perturbation has the form of backward rounding error for the generalized Cholesky factorization algorithm. These bounds can be much tighter than some existing ones while the conditions for them to hold are simple and moderate.

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