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Yanfei Yang

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cond-mat.mes-hall cond-mat.mtrl-sci math.NA cond-mat.dis-nn

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preprint2022arXiv

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

preprint2018arXiv

A Joint Bidiagonalization Based Algorithm for Large Scale Linear Discrete Ill-posed Problems in General-Form Regularization

Based on the joint bidiagonalization process of a large matrix pair $\{A,L\}$, we propose and develop an iterative regularization algorithm for the large scale linear discrete ill-posed problems in general-form regularization: $\min\|Lx\| \ \mbox{\rm subject to} \ x\in\mathcal{S} = \{x|\ \|Ax-b\|\leq τ\|e\|\}$ with a Gaussian white noise $e$ and $τ>1$ slightly, where $L$ is a regularization matrix. Our algorithm is different from the hybrid one proposed by Kilmer {\em et al.}, which is based on the same process but solves the general-form Tikhonov regularization problem: $\min_x\left\{\|Ax-b\|^2+λ^2\|Lx\|^2\right\}$. We prove that the iterates take the form of attractive filtered generalized singular value decomposition (GSVD) expansions, where the filters are given explicitly. This result and the analysis on it show that the method must have the desired semi-convergence property and get insight into the regularizing effects of the method. We use the L-curve criterion or the discrepancy principle to determine $k^*$. The algorithm is simple and effective, and numerical experiments illustrate that it often computes more accurate regularized solutions than the hybrid one.

preprint2016arXiv

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.

preprint2016arXiv

Floating up of the zero-energy Landau level in monolayer epitaxial graphene

We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We show that the zero-energy Landau level (LL) in monolayer graphene, which is predicted to be magnetic field ($B$)-independent, can float up above the Fermi energy at low $B$. This is supported by the temperature ($T$)-driven flow diagram approximated by the semi-circle law as well as the $T$-independent point in the Hall conductivity $σ_{xy}$ near $e^2/h$. Our experimental data are in sharp contrast to conventional understanding of the zeroth LL and metallic-like behavior in pristine graphene prepared by mechanical exfoliation at low $T$. This surprising result can be ascribed to substrate-induced sublattice symmetry breaking which splits the degeneracy of the zeroth Landau level. Our finding provides a unified picture regarding the metallic behavior in pristine graphene prepared by mechanical exfoliation, and the insulating behavior and the insulator-quantum Hall transition in monolayer epitaxial graphene.

preprint2014arXiv

Low Carrier Density Epitaxial Graphene Devices On SiC

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air.