BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Randolph E. Elmquist

Randolph E. Elmquist appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nn

Catalog footprint

What is connected

10works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

10 published item(s)

preprint2022arXiv

Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions

An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fabrication of quantum Hall p-n junction checkerboards

Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $ν$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$Ω$ and reaching as high as 1.29 M$Ω$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Floating up of the zero-energy Landau level in monolayer epitaxial graphene

We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We show that the zero-energy Landau level (LL) in monolayer graphene, which is predicted to be magnetic field ($B$)-independent, can float up above the Fermi energy at low $B$. This is supported by the temperature ($T$)-driven flow diagram approximated by the semi-circle law as well as the $T$-independent point in the Hall conductivity $σ_{xy}$ near $e^2/h$. Our experimental data are in sharp contrast to conventional understanding of the zeroth LL and metallic-like behavior in pristine graphene prepared by mechanical exfoliation at low $T$. This surprising result can be ascribed to substrate-induced sublattice symmetry breaking which splits the degeneracy of the zeroth Landau level. Our finding provides a unified picture regarding the metallic behavior in pristine graphene prepared by mechanical exfoliation, and the insulating behavior and the insulator-quantum Hall transition in monolayer epitaxial graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low Carrier Density Epitaxial Graphene Devices On SiC

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air.

0 citations0 reviewsNo code linkedOpen access