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Yan Xin

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Published work

7 published item(s)

preprint2026arXiv

Ramp Josephson junctions of Al/Ti/Sr2RuO4: Observation of single-domain quantum oscillations and the detection of chiral edge current

The determination of how the phase of the superconducting order parameter in a superconductor varies with the spatial direction, which can be done only through the Josephson-effect-based phase-sensitive measurements, is crucial for the establishment of the precise pairing symmetry of the superconductor. So far, such measurements have been done on high-Tc cuprate superconductors but only at a couple of directions for Sr2RuO4 because of the difficulty in preparing Josephson junctions between Sr2RuO4 and an s-wave superconductor with a chosen mutual orientation. Another long-standing issue in Sr2RuO4, which was shown previously to feature a spontaneously broken time-reversal symmetry by muon spin rotation and other measurements, is that the expected presence of chiral surface currents, domains, and domain walls is yet to be explicitly shown experimentally. To address these issues, we have long sought the preparation of high-quality Josephson junctions between Sr2RuO4 and a conventional s-wave with a controllable orientation relative to symmetry axes in Sr2RuO4. We report in this article the successful fabrication of ramp Josephson junctions of Al/Ti/Sr2RuO4 on thin single crystals of Sr2RuO4 obtained by mechanical exfoliation. These junctions were found to show high-quality quantum oscillations consistent with a single-domain Josephson coupling. The normal junction resistance was found to depend extremely sensitively on the supercurrent flowing in the Sr2RuO4 crystal on which the Josephson junction was made. This finding was used in the present work to provide an estimate of the size of the chiral surface current, which is shown to agree with its upper bound established previously.

preprint2022arXiv

An Overview on IEEE 802.11bf: WLAN Sensing

With recent advancements, the wireless local area network (WLAN) or wireless fidelity (Wi-Fi) technology has been successfully utilized to realize sensing functionalities such as detection, localization, and recognition. However, the WLANs standards are developed mainly for the purpose of communication, and thus may not be able to meet the stringent sensing requirements in emerging applications. To resolve this issue, a new Task Group (TG), namely IEEE 802.11bf, has been established by the IEEE 802.11 working group, with the objective of creating a new amendment to the WLAN standard to provide advanced sensing requirements while minimizing the effect on communications. This paper provides a comprehensive overview on the up-to-date efforts in the IEEE 802.11bf TG. First, we introduce the definition of the 802.11bf amendment and its standardization timeline. Then, we discuss the WLAN sensing procedure and framework used for measurement acquisition, by considering both conventional sensing at sub-7 GHz and directional multi-gigabit (DMG) sensing at 60 GHz, respectively. Next, we present various candidate technical features for IEEE 802.11bf, including waveform/sequence design, feedback types, quantization, as well as security and privacy. Finally, we describe the methodologies used by the IEEE 802.11bf TG to evaluate the alternative performance. It is desired that this overview paper provide useful insights on IEEE 802.11 WLAN sensing to people with great interests and promote the IEEE 802.11bf standard to be widely deployed.

preprint2019arXiv

Contact resistivity due to oxide layers between two REBCO tapes

In a no-insulation (NI) REBCO magnet, the turn-to-turn contact resistivity (Rc) determines its quench self-protection capability, charging delay time and the energy loss during field ramps. Therefore it is critically important to be able to control a range of Rc values suitable for various NI magnet coils. We used a commercial oxidizing agent Ebonol C to treat the copper surface of REBCO tapes. The copper oxide layer was characterized by cross-sectional transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). The oxide layer formed in Ebonol C at 98 °C for 1 min is Cu2O of about 0.5 um. The Rc between two oxidized REBCO is in the order of 35 mOhm-cm2 at 4.2 K which decreases slowly with contact pressure cycles. The Rc increases but only slightly at 77 K. We also investigated the effect of oxidation of stainless steel co-wind tape on Rc. The native oxides on 316 stainless steel tape as well as those heated in air at 200 - 600 °C were examined by TEM and XPS. The native oxides layer is about 3 nm thick. After heating at 300 °C for 8 min and 600 °C for 1 min, its thickness increases to about 10 and 30 nm respectively. For the stainless steel tapes with about 10 nm surface oxides, pressure cycling for 30,000 cycles decreases Rc by almost 4 orders of magnitude. Whereas at 77 K, it only changes slightly. For a surface with 30 nm oxide, the Rc decreases moderately with load cycles. The results suggest that for an oxidized stainless steel to achieve stable Rc over large number of load cycles a relatively thick oxide film is needed.

preprint2015arXiv

Non-stoichiometry and Defects in the Weyl Semimetals TaAs, TaP, NbP, and NbAs

We report a structural study of the Weyl semimetals TaAs, TaP, NbP, and NbAs, utilizing diffraction techniques (single crystal x-ray diffraction and energy dispersive spectroscopy) and imaging techniques (transmission electron microscopy/scanning transmission electron microscopy). We observe defects of various degrees, leading to non-stoichiometric single crystals of all four semimetals. While TaP displays a large pnictide deficiency with composition TaP$_{0.83(3)}$, and stacking faults accompanied by anti-site disorder and site vacancies, TaAs displays transition metal deficiency with composition Ta$_{0.92(2)}$As and a high density of stacking faults. NbP also displays pnictide deficiency, yielding composition NbP$_{0.95(2)}$, and lastly, NbAs display very little deviation from a 1:1 composition, NbAs$_{1.00(3)}$, and is therefore recommended to serve as the model compound for these semimetals.

preprint2014arXiv

Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-doped, displaying on/off ratios surpassing 106 and typical sub-threshold swings of ~ 140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm^2/Vs which are comparable to figures previously reported for single or bi-layered MoS_2 and/or for MoSe_2 exfoliated onto SiO_2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that both MoS_2 is electron doped, the stacking of MoTe_2 onto MoS_2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe_2 is comparable to those of MoS_2 and MoSe_2, the heavier element Te should lead to a stronger spin orbit-coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.

preprint2014arXiv

Ti$_{1-x}$Au$_x$ Alloys: Hard Biocompatible Metals and Their Possible Applications

The search for new hard materials is often challenging from both theoretical and experimental points of view. Furthermore, using materials for biomedical applications calls for alloys with high biocompatibility which are even more sparse. The Ti$_{1-x}$Au$_x$ ($0.22 \leq x \leq 0.8$) exhibit extreme hardness and strength values, elevated melting temperatures (compared to those of constituent elements), reduced density compared to Au, high malleability, bulk metallicity, high biocompatibility, low wear, reduced friction, potentially high radio opacity, as well as osseointegration. All these properties render the Ti$_{1-x}$Au$_x$ alloys particularly useful for orthopedic, dental, and prosthetic applications, where they could be used as both permanent and temporary components. Additionally, the ability of Ti$_{1-x}$Au$_x$ alloys to adhere to ceramic parts could reduce the weight and cost of these components.