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Yafei Ren

Yafei Ren appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

12 published item(s)

preprint2022arXiv

DC Current Generation and Power Feature in Strongly Driven Floquet-Bloch Systems

We study the DC current generation in a periodically driven Bloch system connected to a heat bath. Under a relaxation time approximation, the density matrix for such a system is obtained, which is related to two equilibria: a Floquet quasi-equilibrium where the density matrix is diagonal under the Floquet-Bloch eigenbasis and an instantaneous Bloch thermal equilibrium. Then, the current responses and their power features, i.e. the power input behavior, are discussed in a unified manner, which reveals that there exist an intrinsic current and an extrinsic correction. Remarkably, the intrinsic part consumes no energy and corresponds to the Floquet quasi-equilibrium, while the extrinsic part needs a sustained energy input and originates from a shift between two equilibrium ensembles. We further investigate the role of the external driving field strength finding that large DC currents can be generated under a relatively strong but not too strong driving field.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Lattice dynamics with molecular Berry curvature: chiral optical phonons

Under the Born-Oppenheimer approximation, the electronic ground state evolves adiabatically and can accumulate geometrical phases characterized by the molecular Berry curvature. In this work, we study the effect of the molecular Berry curvature on the lattice dynamics in a system with broken time-reversal symmetry. The molecular Berry curvature is formulated based on the single-particle electronic Bloch states. It manifests as a non-local effective magnetic field in the equations of motion of the ions that are beyond the widely adopted Raman spin-lattice coupling model. We employ the Bogoliubov transformation to solve the quantized equations of motion and to obtain phonon polarization vectors. We apply our formula to the Haldane model on a honeycomb lattice and find a large molecular Berry curvature around the Brillouin zone center. As a result, the degeneracy of the optical branches at this point is lifted intrinsically. The lifted optical phonons show circular polarizations, possess large phonon Berry curvature, and have a nearly quantized angular momentum that modifies the Einstein-de Haas effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Approaching Three-Dimensional Quantum Hall effect in Bulk HfTe5

The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems1,2. By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau level spacing, quasi-2D quantum Hall effects have been experimentally observed3~7, due to the similar physical origin of the 2D counterpart. Recently, in a real 3D electronic gas system where the interlayer coupling is much stronger than the Landau level spacing, 3D quantum Hall effect has been observed in ZrTe58. In this Letter, we report the electronic transport features of its sister bulk material, i.e., HfTe5, under external magnetic field. We observe a series of plateaus in Hall resistance \r{ho}xy as magnetic field increases until it reaches the quantum limit at 1~2 Tesla. At the plateau regions, the longitudinal resistance \r{ho}xx exhibits local minima. Although \r{ho}xx is still nonzero, its value becomes much smaller than \r{ho}xy at the last few plateaus. By mapping the Fermi surface via measuring the Shubonikov-de Haas oscillation, we find that the strength of Hall plateau is proportional to the Fermi wavelength, suggesting that its formation may be attributed to the gap opening from the interaction driven Fermi surface instability. By comparing the bulk band structures of ZrTe5 and HfTe5, we find that there exists an extra pocket near the Fermi level of HfTe5, which may lead to the finite but nonzero longitudinal conductance.

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preprint2020arXiv

Engineering Corner States from Two-Dimensional Topological Insulators

We theoretically demonstrate that the second-order topological insulator with robust corner states can be realized in two-dimensional $\mathbb{Z}_2$ topological insulators by applying an in-plane Zeeman field. Zeeman field breaks the time-reversal symmetry and thus destroys the $\mathbb{Z}_2$ topological phase. Nevertheless, it respects some crystalline symmetries and thus can protect the higher-order topological phase. By taking the Kane-Mele model as a concrete example, we find that spin-helical edge states along zigzag boundaries are gapped out by Zeeman field whereas in-gap corner state at the intersection between two zigzag edges arises, which is independent on the field orientation. We further show that the corner states are robust against the out-of-plane Zeeman field, staggered sublattice potentials, Rashba spin-orbit coupling, and the buckling of honeycomb lattices, making them experimentally feasible. Similar behaviors can also be found in the well-known Bernevig-Hughes-Zhang model.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metallic Network of Topological Domain Walls

We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point and the corresponding electronic states distribute along the domain walls. Near the charge neutrality point, we find quantized conductance in nanoribbon with sawtooth domain wall edges that propagates along the boundaries and is robust against weak disorder. For a trident edged ribbon, we find a small energy gap due to the finite size effect making the nanoribbon an insulator. When the Fermi energy is away from charge neutrality point, all domain walls contribute to the conduction of current. Our results provide a comprehensive analysis of the electronic transport properties in a topological domain wall network that not only agrees qualitatively with experiments on marginally twisted bilayer graphene under a perpendicular electric field, but also can provide useful insights for designing low-power topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley-Current Splitter in Minimally Twisted Bilayer Graphene

We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

WKB estimate of bilayer graphene's magic twist angles

Graphene bilayers exhibit zero-energy flat bands at a discrete series of magic twist angles. In the absence of intra-sublattice inter-layer hopping, zero-energy states satisfy a Dirac equation with a non-abelian SU(2) gauge potential that cannot be diagonalized globally. We develop a semiclassical WKB approximation scheme for this Dirac equation by introducing a dimensionless Planck's constant proportional to the twist angle, solving the linearized Dirac equation around AB and BA turning points, and connecting Airy function solutions via bulk WKB wavefunctions. We find zero energy solutions at a discrete set of values of the dimensionless Planck's constant, which we obtain analytically. Our analytic flat band twist angles correspond closely to those determined numerically in previous work.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mesoscopic Electronic Transport in Twisted Bilayer Graphene

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene leads to upper and lower graphene layers separately, we explore systematically the dependence of electronic transport on the twist angle, Fermi energy, system size, layer stacking order and twist axis. When choose different twist axes for either AA- or AB-stacked bilayer graphene, we find that the dependence of conductance on twist angle displays qualitatively distinction, i.e., the systems with "top" axis exhibit finite conductance oscillating as a function of the twist angle, while the ones with "hollow" axis exhibit nearly vanishing conductance for different twist angles or Fermi energies near the charge neutrality point. These findings suggest that the choice of twist axis can effectively tune the interlayer conductance, making it a crucial factor in designing of nanodevices with the twisted van der Waals multilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling

We numerically investigate the electronic transport properties of graphene nanoribbons and carbon nanotubes with inter-valley coupling, e.g., in \sqrt{3}N \times \sqrt{3}N and 3N \times 3N superlattices. By taking the \sqrt{3} \times \sqrt{3} graphene superlattice as an example, we show that tailoring the bulk graphene superlattice results in rich structural configurations of nanoribbons and nanotubes. After studying the electronic characteristics of the corresponding armchair and zigzag nanoribbon geometries, we find that the linear bands of carbon nanotubes can lead to the Klein tunnelling-like phenomenon, i.e., electrons propagate along tubes without backscattering even in the presence of a barrier. Due to the coupling between K and K' valleys of pristine graphene by \sqrt{3} \times \sqrt{3} supercells,we propose a valley-field-effect transistor based on the armchair carbon nanotube, where the valley polarization of the current can be tuned by applying a gate voltage or varying the length of the armchair carbon nanotubes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single-Valley Engineering in Graphene Superlattices

The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator phases. Here we propose a way to engineer a chiral single-valley metallic phase with quadratic crossover in a honeycomb lattice through tailored \sqrt{3}N *\sqrt{3}N or 3N *3N superlattices. The possibility of tuning valley-polarization via pseudo-Zeeman field and the emergence of Dresselhaus-type valley-orbit coupling are proposed in adatom decorated graphene superlattices. Such valley manipulation mechanisms and metallic phase can also find applications in honeycomb photonic crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological Phases in Two-Dimensional Materials: A Brief Review

Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this review, we mainly focus on the recent progress in the engineering of topologically nontrivial phases (such as $\mathbb{Z}_2$ topological insulators, quantum anomalous Hall effects, quantum valley Hall effects \textit{etc.}) in two-dimensional material systems, including quantum wells, atomic crystal layers of elements from group III to group VII, and the transition metal compounds.

0 citations0 reviewsNo code linkedOpen access