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Yafei Meng

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cond-mat.mtrl-sci physics.optics

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preprint2021arXiv

1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure

The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and time-domain pump-probe technique. The two absorption peaks located at 2.0 um (0.62 eV) and 2.7 um (0.45 eV) are originated from the ErAs/GaAs interfacial Schottky states and sub-bandgap transition within GaAs, respectively. The photo-induced carrier lifetime, excited using 1550 nm light, is measured to be as low as 190 fs for the GaAs/ErAs/GaAs heterostructure, making it a promising material for 1550-nm-technology-compatible, high critical-breakdown-field THz devices. The relaxation mechanism is proposed and the functionality of ErAs is revealed.

preprint2016arXiv

A High-Performance Mid-infrared Optical Switch Enabled by Bulk Dirac Fermions in Cd3As2

Pulsed lasers operating in the 2-5 μm band are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain media, the lack of a capable pulse generation mechanism, i.e. a passive optical switch, remains a significant technological challenge. Here we show that mid-infrared optical response of Dirac states in crystalline Cd3As2, a three-dimensional topological Dirac semimetal (TDS), constitutes an ideal ultrafast optical switching mechanism for the 2-5 μm range. Significantly, fundamental aspects of the photocarrier processes, such as relaxation time scales, are found to be flexibly controlled through element doping, a feature crucial for the development of convenient mid-infrared ultrafast sources. Although various exotic physical phenomena have been uncovered in three-dimensional TDS systems, our findings show for the first time that this emerging class of quantum materials can be harnessed to fill a long known gap in the field of photonics.

preprint2015arXiv

Stable gain-switched thulium fiber laser with 140 nm tuning range

We demonstrate a gain-switched thulium fiber laser that can be continuously tuned over 140 nm, while maintaining stable nanosecond single-pulse operation. To the best of our knowledge, this system represents the broadest tuning range for a gain-switched fiber laser. The system simplicity and wideband wavelength tunability combined with the ability to control the temporal characteristics of the gain-switched pulses mean this is a versatile source highly suited to a wide range of applications in the eye-safe region of the infrared, including spectroscopy, sensing and material processing, as well as being a practical seed source for pumping nonlinear processes.