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Ya Nie

Ya Nie appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Rapid Synthesis of Thermoelectric SnSe Thin Films by MPCVD

Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can be achieved by using single-mode MPCVD with appropriate source materials. The analysis combing microscope images, X-ray diffraction patterns and lattice vibration modes shows that the grown thin films were composed of orthorhombic structured SnSe polycrystals mainly along the (111) direction. Further thermoelectric (TE) characterizations reveal that the power factor of the SnSe films reached 3.98 μW cm-1K-2 at 600 K, comparable to the highest reported values of SnSe thin films. Our results may open an avenue for rapid synthesis of new types of materials such as IV-VI compounds and be useful for TE application of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were investigated using phonon spectra, and an infinite miscibility between Si and Ge elements were revealed in the 2D honeycomb structures. The simulated scanning tunneling microscope images and Raman and infrared active modes of the Si1-xGexM were then obtained for structural characterizations. Interestingly, the study of electronic properties revealed not previously reported oscillatory nonlinear dependence of band gap values on the elementary proportion x in the Si1-xGexM, which suggests an alternative way for tuning the band gaps of 2D materials. Additionally, low effective masses (0.008m0 ~ 0.021m0) of the carriers in the semiconducting Si1-xGexM were found, which has potentials for high-speed applications. Considering the advantage of their compatibility with current Si-based technology and the trend of miniature of electronic devices, the Si1-xGexM with stable structures and excellent properties would be important for 2D applications based on group IV materials.

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