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Ya. I. Rodionov

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci quant-ph

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preprint2016arXiv

Floquet spectrum and driven conductance in Dirac materials: Effects of Landau-Zener-Stückelberg-Majorana interferometry

Using the Landau-Zener-Stückelberg-Majorana-type (LZSM) semiclassical approach, we study both graphene and a thin film of a Weyl semimetal subjected to a strong AC electromagnetic field. The spectrum of quasi energies in the Weyl semimetal turns out to be similar to that of a graphene sheet. Earlier it has been predicted qualitatively that the transport properties of strongly-irradiated graphene oscillate as a function of the radiation intensity [S.V. Syzranov et al., Phys. Rev. B 88, 241112 (2013)]. Here we obtain rigorous quantitative results for a driven linear conductance of graphene and a thin film of a Weyl semimetal. The exact quantitative structure of oscillations exhibits two contributions. The first one is a manifestation of the Ramsauer-Townsend effect, while the second contribution is a consequence of the LZSM interference defining the spectrum of quasienergies.

preprint2015arXiv

Charge relaxation resistance in the cotunneling regime of multi-channel Coulomb blockade: Violation of Korringa-Shiba relation

We study the low frequency admittance of a small metallic island coupled to a gate electrode and to a massive reservoir via a \emph{multi channel} tunnel junction. The ac current is caused by a slowly oscillating gate voltage. We focus on the regime of inelastic cotunneling in which the dissipation of energy (the real part of the admittance) is determined by two-electron tunneling with creation of electron-hole pairs on the island. We demonstrate that at finite temperatures but low frequencies the energy dissipation is ohmic whereas at zero temperature it is super-ohmic. We find that (i) the charge relaxation resistance (extracted from the real part of the admittance) is strongly temperature dependent, (ii) the imaginary and real parts of the admittance do not satisfy the Korringa-Shiba relation. At zero temperature the charge relaxation resistance vanishes in agreement with the recent zero temperature analysis [M. Filippone and C. Mora, Phys. Rev. B {\bf 86}, 125311 (2012) and P. Dutt, T. L. Schmidt, C. Mora, and K. Le Hur, Phys. Rev. B {\bf 87}, 155134 (2013)].

preprint2015arXiv

Effects of anisotropy and disorder on the conductivity of Weyl semimetals

We study dc conductivity of a Weyl semimetal with uniaxial anisotropy (Fermi velocity ratio $ξ= v_\bot/v_\parallel\neq1$) considering the scattering of charge carriers by a wide class of impurity potentials, both short- and long-range. We obtain the ratio of transverse and longitudinal (with respect to the anisotropy axis) conductivities as a function of both $ξ$ and temperature. We find that the transverse and longitudinal conductivities exhibit different temperature dependence in the case of short-range disorder. For general long-range disorder, the temperature dependence ($\sim T^4$) of the conductivity turns out to be insensitive of the anisotropy in the limits of strong ($ξ\gg$ and $\ll1$) and weak ($ξ\approx1$) anisotropy.

preprint2013arXiv

Strongly anisotropic Dirac quasiparticles in irradiated graphene

We study quasiparticle dynamics in graphene exposed to a linearly-polarized electromagnetic wave of very large intensity. Low-energy transport in such system can be described by an effective time-independent Hamiltonian, characterized by multiple Dirac points in the first Brillouin zone. Around each Dirac point the spectrum is anisotropic: the velocity along the polarization of the radiation significantly exceeds the velocity in the perpendicular direction. Moreover, in some of the points the transverse velocity oscillates as a function of the radiation intensity. We find that the conductance of a graphene p-n junction in the regime of strong irradiation depends on the polarization as $G(θ)\propto|\sinθ|^{3/2}$, where $θ$ is the angle between the polarization and the p-n interface, and oscillates as a function of the radiation intensity.

preprint2010arXiv

Out-of-Equilibrium Admittance of Single Electron Box Under Strong Coulomb Blockade

We study admittance and energy dissipation in an out-of-equlibrium single electron box. The system consists of a small metallic island coupled to a massive reservoir via single tunneling junction. The potential of electrons in the island is controlled by an additional gate electrode. The energy dissipation is caused by an AC gate voltage. The case of a strong Coulomb blockade is considered. We focus on the regime when electron coherence can be neglected but quantum fluctuations of charge are strong due to Coulomb interaction. We obtain the admittance under the specified conditions. It turns out that the energy dissipation rate can be expressed via charge relaxation resistance and renormalized gate capacitance even out of equilibrium. We suggest the admittance as a tool for a measurement of the bosonic distribution corresponding collective excitations in the system.

preprint2009arXiv

Charge relaxation resistance in the Coulomb blockade problem

We study the dissipation in a system consisting of a small metallic island coupled to a gate electrode and to a massive reservoir via single tunneling junction. The dissipation of energy is caused by a slowly oscillating gate voltage. We compute it in the regimes of weak and strong Coulomb blockade. We focus on the regime of not very low temperatures when electron coherence can be neglected but quantum fluctuations of charge are strong due to Coulomb interaction. The answers assume a particularly transparent form while expressed in terms of specially chosen physical observables. We discovered that the dissipation rate is given by a universal expression in both limiting cases.