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Y. Xiong

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Published work

3 published item(s)

preprint2021arXiv

Tuning the electronic band structure in a kagome ferromagnetic metal via magnetization

Materials with zero energy band gap display intriguing properties including high sensitivity of the electronic band structure to external stimulus such as pressure or magnetic field. An interesting candidate for zero energy band gap are Weyl nodes at the Fermi level EF. A prerequisite for the existence of Weyl nodes is to either have inversion or time reversal symmetry broken. Weyl nodes in systems with broken time reversal symmetry are ideal to realize the tunability of the electronic band structure by magnetic field. Theoretically, it has been shown that in ferromagnetic Weyl materials, the band structure is dependent upon the magnetization direction and thus the electronic bands can be tuned by controlling the magnetization direction. Here, we demonstrate tuning of the band structure in a kagome Weyl ferromagnetic metal Fe3Sn2 with magnetization and magnetic field. Owing to spin-orbit coupling, we observe changes in the band structure depending on the magnetization direction that amount to a decrease in the carrier density by a factor of four when the magnetization lies in the kagome plane as compared to when the magnetization is along the c axis. Our discovery opens a way for tuning the carrier density in ferromagnetic materials.

preprint2020arXiv

Anomalous planar Hall effect in a kagome ferromagnet

The macroscopic signature for Weyl nodes so far has been the negative longitudinal magnetoresistance arising from the chiral anomaly. However, negative longitudinal magnetoresistance is not unique to chiral anomaly and can arise due to completely different mechanisms such as current jetting or in ferromagnetic systems due to the suppression of scattering with magnons. Therefore, a macroscopic effect that can be uniquely attributed to the presence of Weyl nodes is desirable. Here we show that the planar Hall effect could be a hallmark for Weyl nodes. We investigated the anisotropic magnetoresistance and planar Hall effect in Fe$_3$Sn$_2$, which has a kagome lattice and has been predicted to be a type II Weyl metal. We discover that the planar Hall effect contains a field antisymmetric contribution in addition to the ordinary field symmetric contribution. The field antisymmetric planar Hall effect has a 3-fold rotational symmetry, distinctively different from the symmetric planar Hall effect, but consistent with the 3-fold rotational degeneracy of the magnetization in Fe$_3$Sn$_2$. The temperature and field dependence of the antisymmetric planar Hall effect rules out an interpretation based on contribution from the anomalous Hall effect and is different from the symmetric planar Hall effect, pointing to a different origin. We attribute the antisymmetric planar Hall effect to the topological nature of Fe$_3$Sn$_2$ due to the presence of Weyl II nodes. Our finding offers a promising route for macroscopically probing Weyl systems.

preprint2014arXiv

Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe

We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a transition to a magnetic state at $T_c=275$ K as identified by a sharp peak in the ac magnetic susceptibility, as well as second phase transition at lower temperature that becomes apparent only at finite magnetic field. We discover two phase transitions in the specific heat at temperatures much below the Curie temperature one of which we associate with changes to the magnetic structure. A magnetic field reduces the temperature of this transition which corresponds closely to the sharp peak observed in the ac susceptibility at fields above 5 kOe. The second of these transitions is not affected by the application of field and has no signature in the magnetic properties or our crystal structure parameters. Transport measurements indicate that MnGe is metal with a negative magnetoresistance similar to that seen in isostructural FeGe and MnSi. Hall effect measurements reveal a carrier concentration of about 0.5 carriers per formula unit also similar to that found in FeGe and MnSi. CoGe is shown to be a low carrier density metal with a very small, nearly temperature independent diamagnetic susceptibility.