Researcher profile

Y. W. Zhang

Y. W. Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

Probing for high momentum protons in $^4$He via the $^4He(e,e'p)X$ reaction

Experimental cross sections for the $^4He(e,e'p)X$ reaction up to a missing momentum of 0.632 GeV/$c$ at $x_B=1.24$ and $Q^2$=2(GeV/$c$)$^2$ are reported. The data are compared to Relativistic Distorted Wave Impulse Approximation(RDWIA) calculations for $^4He(e,e'p)^3H$ channel. Significantly more events in the triton mass region are measured for $p_{m}$$>$0.45 GeV/$c$ than are predicted by the theoretical model, suggesting that the effects of initial-state multi-nucleon correlations are stronger than expected by the RDWIA model.

preprint2020arXiv

Novel observation of isospin structure of short-range correlations in calcium isotopes

Short Range Correlations (SRCs) have been identified as being responsible for the high momentum tail of the nucleon momentum distribution, n(k). Hard, short-range interactions of nucleon pairs generate the high momentum tail and imprint a universal character on n(k) for all nuclei at large momentum. Triple coincidence experiments have shown a strong dominance of np pairs, but these measurements involve large final state interactions. This paper presents the results from Jefferson Lab experiment E08014 which measured inclusive electron scattering cross-section from Ca isotopes. By comparing the inclusive cross section from 48Ca to 40Ca in a kinematic region dominated by SRCs we provide a new way to study the isospin structure of SRCs.

preprint2016arXiv

Mechanical Properties of Phosphorene Nanotubes: A Density Functional Tight-Binding Study

Using density functional tight-binding method, we studied the elastic properties, deformation and failure of armchair (AC) and zigzag (ZZ) phosphorene nano tubes (PNTs) under uniaxial tensile strain. We found that the deformation and failure of PNTs are very anisotropic. For ZZ PNTs, three deformation phases are recognized: The primary linear elastic phase, which is associated with the interactions between the neighboring puckers, succeeded by the bond rotation phase, where the puckered configuration of phosphorene is smoothed via bond rotation, and lastly the bond elongation phase, where the P-P bonds are directly stretched up to the maximally allowed limit and the failure is initiated by the rupture of the most stretched bonds.

preprint2013arXiv

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the ON irradiation bias configuration is the worst-case bias for both front-gate and back-gate transistor. To understand the mechanism, a charge distribution model is proposed. We think that the performance degradation of the devices is due to the radiation induced positive charge trapped in the bottom corner of shallow trench isolation (STI) oxide. In addition, comparing the irradiation responses of short and long channel devices under different drain bias, the short channel transistors show a larger degeneration of leakage current and threshold voltage. The dipole theory is introduced to explain the TID enhanced short channel effect.