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Y. S. Hor

Y. S. Hor appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-scicond-mat.str-elquant-phcond-mat.othercond-mat.dis-nnphysics.comp-ph

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Published work

31 published item(s)

preprint2016arXiv

Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb$_x$Bi$_2$Se$_3$ via penetration depth measurements

The low-temperature variation of the London penetration depth $λ(T)$ in the candidate topological superconductor Nb$_x$Bi$_2$Se$_3$ (x = 0.25) is reported for several crystals. The measurements were carried out by means of a tunnel-diode oscillator (TDO) technique in both field orientations ($H_{rf} \parallel$ $c$ and $H_{rf} \parallel$ $ab$ planes). All samples exhibited power law behavior at low temperatures ($Δλ\sim T^2$) clearly indicating the presence of point nodes in the superconducting order parameter. The results presented here are consistent with a nematic odd-parity spin-triplet $E_u$ pairing state in Nb$_x$Bi$_2$Se$_3$.

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preprint2016arXiv

Robust Fabry-Perot interference in dual-gated Bi$_2$Se$_3$ devices

We study Fabry-Perot interference in hybrid devices, each consisting of a mesoscopic superconducting disk deposited on the surface of a three-dimensional topological insulator. Such structures are hypothesized to contain protected zero modes known as Majorana fermions bound to vortices. The interference manifests as periodic conductance oscillations of magnitude $\sim 0.1$ $e^2/h$. These oscillations show no strong dependence on bulk carrier density or sample thickness, suggesting that they result from phase coherent transport in surface states. However, the Fabry-Perot interference can be tuned by both top and back gates, implying strong electrostatic coupling between the top and bottom surfaces of topological insulator.

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preprint2016arXiv

Spin dynamics and magnetic interactions of Mn dopants in the topological insulator Bi$_2$Te$_3$

The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The investigated high quality single crystals of Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ show a ferromagnetic phase transition for $x\geq 0.04$ at $T_{C}\approx 12$ K. The Hall measurements reveal a p-type finite charge-carrier density. Measurements of the temperature dependence of the ESR signal of Mn dopants for different orientations of the external magnetic field give evidence that the localized Mn moments interact with the mobile charge carriers leading to a Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling between the Mn spins of order 2-3 meV. Furthermore, ESR reveals a low-dimensional character of magnetic correlations that persist far above the ferromagnetic ordering temperature.

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preprint2016arXiv

The hole Fermi surface in Bi$_{2}$Se$_{3}$ probed by quantum oscillations

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between $0^\circ$ and $90^\circ$, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to $24$~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by $GW$ calculations.

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preprint2015arXiv

Evidence for an anomalous current phase relation in topological insulator Josephson junctions

Josephson junctions with topological insulator weak links can host low energy Andreev bound states giving rise to a current phase relation that deviates from sinusoidal behaviour. Of particular interest are zero energy Majorana bound states that form at a phase difference of $π$. Here we report on interferometry studies of Josephson junctions and superconducting quantum interference devices (SQUIDs) incorporating topological insulator weak links. We find that the nodes in single junction diffraction patterns and SQUID oscillations are lifted and independent of chemical potential. At high temperatures, the SQUID oscillations revert to conventional behaviour, ruling out asymmetry. The node lifting of the SQUID oscillations is consistent with low energy Andreev bound states exhibiting a nonsinusoidal current phase relation, coexisting with states possessing a conventional sinusoidal current phase relation. However, the finite nodal currents in the single junction diffraction pattern suggest an anomalous contribution to the supercurrent possibly carried by Majorana bound states, although we also consider the possibility of inhomogeneity.

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preprint2014arXiv

Dynamical Gate Tunable Supercurrents in Topological Josephson Junctions

Josephson junctions made of closely-spaced conventional superconductors on the surface of 3D topological insulators have been proposed to host Andreev bound states (ABSs) which can include Majorana fermions. Here, we present an extensive study of the supercurrent carried by low energy ABSs in Nb/Bi$_2$Se$_3$/Nb Josephson junctions in various SQUIDs as we modulate the carrier density in the Bi$_2$Se$_3$ barriers through electrostatic top gates. As previously reported, we find a precipitous drop in the Josephson current at a critical value of the voltage applied to the top gate. This drop has been attributed to a transition where the topologically trivial 2DEG at the surface is nearly depleted, causing a shift in the spatial location and change in nature of the helical surface states. We present measurements that support this picture by revealing qualitative changes in the temperature and magnetic field dependence of the critical current across this transition. In particular, we observe pronounced fluctuations in the critical current near total depletion of the 2DEG that demonstrate the dynamical nature of the supercurrent transport through topological low energy ABSs.

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preprint2014arXiv

Phase Coherence and Andreev Reflection in Topological Insulator Devices

Topological insulators (TIs) have attracted immense interest because they host helical surface states. Protected by time-reversal symmetry, they are robust to non-magnetic disorder. When superconductivity is induced in these helical states, they are predicted to emulate p-wave pairing symmetry, with Majorana states bound to vortices. Majorana bound states possess non-Abelian exchange statistics which can be probed through interferometry. Here, we take a significant step towards Majorana interferometry by observing pronounced Fabry-Perot oscillations in a TI sandwiched between a superconducting and normal lead. For energies below the superconducting gap, we observe a doubling in the frequency of the oscillations, arising from the additional phase accumulated from Andreev reflection. When a magnetic field is applied perpendicular to the TI surface, a number of very sharp and gate-tunable conductance peaks appear at or near zero energy, which has consequences for interpreting spectroscopic probes of Majorana fermions. Our results demonstrate that TIs are a promising platform for exploring phase-coherent transport in a solid-state system.

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preprint2014arXiv

Quantum Oscillations in Cu$_x$Bi$_2$Se$_3$ in High Magnetic Fields

Cu$_x$Bi$_2$Se$_3$ has drawn much attention as the leading candidate to be the first topological superconductor and the realization of coveted Majorana particles in a condensed matter system. However, there has been increasing controversy about the nature of its superconducting phase. This study sheds light on present ambiguity in the normal state electronic state, by providing a complete look at the quantum oscillations in magnetization in Cu$_x$Bi$_2$Se$_3$ at intense high fields up to 31T. Our study focuses on the angular dependence of the quantum oscillation pattern in a low carrier concentration. As magnetic field tilts from along the crystalline c-axis to ab-plane, the change of the oscillation period follows the prediction of the ellipsoidal Fermi surface. As the doping level changes, the 3D Fermi surface is found to transform into quasi-cylindrical at high carrier density. Such a transition is potentially a Lifshitz transition of the electronic state in Cu$_x$Bi$_2$Se$_3$.

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preprint2013arXiv

Chemically gated electronic structure of a superconducting doped topological insulator system

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

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preprint2013arXiv

Crystal Structure and Chemistry of Topological Insulators

Topological surface states, a new kind of electronic state of matter, have recently been observed on the cleaved surfaces of crystals of a handful of small band gap semiconductors. The underlying chemical factors that enable these states are crystal symmetry, the presence of strong spin orbit coupling, and an inversion of the energies of the bulk electronic states that normally contribute to the valence and conduction bands. The goals of this review are to briefly introduce the physics of topological insulators to a chemical audience and to describe the chemistry, defect chemistry, and crystal structures of the compounds in this emergent field.

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preprint2013arXiv

Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition

Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$ as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of a Ir$^{4+}$ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order, is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

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preprint2012arXiv

Effects of iron doping on the topological insulator surfaces

Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to understanding their properties without strong Coulomb perturbation or breaking of time reversal symmetry. We have used deposited iron, with a large positive ionization state and significant magnetic moment as a strong probe to modify the surface electronic structure of the Bi2Se3 surface at the gap energy scale. We observe that such perturbation leads to the creation of multiple Dirac fermions consistent with Z2 or Mod(2) symmetry. Taken collectively, these results are a helpful guide in manipulating topological surfaces for probing fundamental physics or developing device applications.

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preprint2012arXiv

Electron behavior in topological insulator based P-N overlayer interfaces

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials.

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preprint2012arXiv

Optical conductivity of Bismuth-based topological insulator

The optical conductivity and the spectral weight of four topological insulators with increasing chemical compensation (Bi2Se3, Bi2-xCaxSe3, Bi2Se2Te, Bi2Te2Se) have been measured from 5 to 300 K and from sub-THz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra, through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks, that we assign to electronic transitions among localized states. From the far-infrared spectral weight of the most compensated sample (Bi2Te2Se) one can estimate a density of charge-carriers in the order of 10^17/cm^3 in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still affected by extrinsic charge excitations.

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preprint2012arXiv

Point-contact Andreev reflection spectroscopy of candidate topological superconductor Cu0.25Bi2Se3

We perform a point-contact Andreev reflection spectroscopic study of the topological superconducting material, Cu0.25Bi2Se3, in the ballistic regime using a normal-metal gold tip. We observe distinct point-contact spectra on the superconducting and non-superconducting regions of the crystal surface: the former shows a marked zero-bias conductance peak, indicative of unconventional superconductivity, while the latter exhibits a pseudogap-like feature. In both cases the measured differential conductance spectra exhibit a large linear background, preventing direct quantitative comparison with theory. We attribute this background to inelastic scattering at the tip-sample interface, and compare the background-subtracted spectra with a single-band p-wave model.

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preprint2012arXiv

Quantum oscillations in topological superconductor candidate Cu$_{0.25}$Bi$_2$Se$_3$

Quantum oscillations are generally studied to resolve the electronic structure of topological insulators. In Cu$_{0.25}$Bi$_2$Se$_3$, the prime candidate of topological superconductors, quantum oscillations are still not observed in magnetotransport measurement. However, using torque magnetometry, quantum oscillations (the de Hass - van Alphen effect) were observed in Cu$_{0.25}$Bi$_2$Se$_3$ . The doping of Cu in Bi$_2$Se$_3$ increases the carrier density and the effective mass without increasing the scattering rate or decreasing the mean free path. In addition, the Fermi velocity remains the same in Cu$_{0.25}$Bi$_2$Se$_3$ as that in Bi$_2$Se$_3$. Our results imply that the insertion of Cu does not change the band structure of Bi$_2$Se$_3$.

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preprint2012arXiv

Signatures of Fractional Quantum Hall States in Topological Insulators

The fractional quantum Hall (FQH) state is a topological state of matter resulting from the many-body effect of interacting electrons and is of vast interest in fundamental physics. The experimental observation of topological surface states (SSs) in three-dimensional bulk solids has allowed the study of a correlated chiral Dirac fermion system, which can host a single Dirac valley without spin degeneracy. Recent theoretical studies suggest that the fractional quantum Hall effect (FQHE) might be observable in topological insulators. However, due to the dominant bulk conduction it is difficult to probe the strong correlation effect in topological insulators from resistivity measurements. Here we report the discovery of FQH states in Bi2Te3 from thermopower measurements. The surface thermopower is ten times greater than that of bulk, which makes possible the observation of fractional-filled Landau levels in SSs. Thermopower hence provides a powerful tool to investigate correlated Dirac fermions in topological insulators. Our observations demonstrate that Dirac topological SSs exhibit strongly correlated phases in a high magnetic field, and would enable studies of a variety of exotic fractional quantum Hall physics and other correlated phenomena in this newly discovered chiral Dirac system.

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preprint2012arXiv

Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators

Using angle-resolved photoemission spectroscopy, we report electronic structure for representative members of ternary topological insulators. We show that several members of this family, such as Bi2Se2Te, Bi2Te2Se, and GeBi2Te4, exhibit a singly degenerate Dirac-like surface state, while Bi2Se2S is a fully gapped insulator with no measurable surface state. One of these compounds, Bi2Se2Te, shows tunable surface state dispersion upon its electronic alloying with Sb (SbxBi2-xSe2Te series). Other members of the ternary family such as GeBi2Te4 and BiTe1.5S1.5 show an in-gap surface Dirac point, the former of which has been predicted to show nonzero weak topological invariants such as (1;111); thus belonging to a different topological class than BiTe1.5S1.5. The measured band structure presented here will be a valuable guide for interpreting transport, thermoelectric, and thermopower measurements on these compounds. The unique surface band topology observed in these compounds contributes towards identifying designer materials with desired flexibility needed for thermoelectric and spintronic device fabrication.

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preprint2011arXiv

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi$_2$Se$_3$

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage $V_g$. We find that the temperature $T$ and magnetic field dependent transport properties in the vicinity of this $V_g$ can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high mobility metallic channel that dominates at low $T$. The conductance (approximately 2 $\times$ 7$e^2/h$), weak anti-localization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for EFE topological insulator devices at room temperature.

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preprint2011arXiv

Direct observation of spin-polarized surface states in the parent compound of topological insulator Bi-Sb using spin-resolved-ARPES in a 3D Mott-polarimetry spin mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a $k$-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of first bulk (3D) topological insulator - topological order in bulk solids. [Invited article for NJP-IOP Focus issue on "Topological Insulators"]

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preprint2011arXiv

Realization of an isolated Dirac node and strongly modulated Spin Texture in the topological insulator Bi2Te3

The development of spin-based applications of topological insulators requires the knowledge and understanding of spin texture configuration maps as they change via gating in the vicinity of an isolated Dirac node. An isolated (graphene-like) Dirac node, however, does not exist in Bi2Te3. While the isolation of surface states via transport channels has been promisingly achieved in Bi2Te3, it is not known how spin textures modulate while gating the surface. Another drawback of Bi2Te3 is that it features multiple band crossings while chemical potential is placed near the Dirac node (at least 3 not one as in Bi2Se3 and many other topological insulators) and its buried Dirac point is not experimentally accessible for the next generation of experiments which require tuning the chemical potential near an isolated (graphene-like) Dirac node. Here, we image the spin texture of Bi2Te3 and suggest a simple modification to realize a much sought out isolated Dirac node regime critical for almost all potential applications (of topological nature) of Bi2Te3. Finally, we demonstrate carrier control in magnetically and nonmagnetically doped Bi2Te3 essential for realizing giant magneto-optical effects and dissipationless spin current devices involving a Bi2Te3-based platform.

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preprint2010arXiv

Direct observation of spin-polarized surface states in the parent compound of a topological insulator using high-resolution spin-resolved-ARPES spectroscopy in a Mott-polarimetry mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a k-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of topological insulator states in the Bi-Sb series.

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preprint2010arXiv

Discovery of several large families of Topological Insulator classes with backscattering-suppressed spin-polarized single-Dirac-cone on the surface

Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and fundamental physics. Experimental realization of many of the predicted topological phenomena requires finding multi-variant topological band insulators which can be multiply connected to magnetic semiconductors and superconductors. Here we present our theoretical prediction and experimental discovery of several new topological insulator classes in AB2X4(124), A2B2X5(225), MN4X7(147), A2X2X'(221) [A,B=Pb,Ge,Sb,Bi and M,N=Pb,Bi and X,X'=Chalcogen family]. We observe that these materials feature gaps up to about 0.35eV. Multi-variant nature allows for diverse surface dispersion tunability, Fermi surface spin-vortex or textured configurations and spin-dependent electronic interference signaling novel quantum transport processes on the surfaces of these materials. Our discovery also provides several new platforms to search for topological-superconductivity (arXiv:0912.3341v1 (2009)) in these exotic materials.

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preprint2010arXiv

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009) http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html]. Here we report the first observation of Spin-Momentum Helical Locking and Spin-Vortex structures in Bi2Se3 and Bi2Te3, demonstrate the existence of Topological-Order at 300K and report a material realization of topological-transport-regime for helical Dirac fermions. Our results reveal a one-to-one spin-momentum locked Dirac structure in Bi2Se3 and Bi2Te3 that is nearly 100% spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological-transport-regime. The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K). Our results pave the way for future transport based studies of topological insulators, and possible room temperature applications of protected spin-polarized edge channels we observe with spin-ARPES in spintronic technology. All of these new results are made possible due to the Spin-resolved-ARPES (Mott polarimetric) technique [http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html ] .

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preprint2010arXiv

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca-doping the Bi2Se3 topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppress the bulk conductivity. Non-metallic Bi2Se3 crystals are obtained. On the other hand, the Bi2Se3 topological insulator can also be induced to become a bulk superconductor, with Tc ~ 3.8 K, by copper intercalation in the van der Waals gaps between the Bi2Se3 layers. Likewise, an as-grown crystal of metallic Bi2Te3 can be turned into a non-metallic crystal by slight variation of the Te content. The Bi2Te3 topological insulator shows small amounts of superconductivity with Tc ~ 5.5 K when reacted with Pd to form materials of the type PdxBi2Te3.

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preprint2010arXiv

Superconductivity at 2.3 K in the misfit compound (PbSe)1.16(TiSe2)2

The structural misfit compound (PbSe)1.16(TiSe2)2 is reported. It is a superconductor with a Tc of 2.3 K. (PbSe)1.16(TiSe2)2 derives from a parent compound, TiSe2, which shows a charge density wave transition and no superconductivity. The crystal structure, characterized by high resolution electron microscopy and powder x-ray diffraction, consists of two layers of 1T-TiSe2 alternating with a double layer of (100) PbSe. Transport measurements suggest that the superconductivity is induced by charge transfer from the PbSe layers to the TiSe2 layers.

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preprint2010arXiv

The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi1.96Mn0.04Te3 and Bi1.91Mn0.09Te3 a second order ferromagnetic transition is observed, with Tc ~ 9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p-type. Angle resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2Te3 are also present in ferromagnetic Mn-doped Bi2-xMnxTe3, and that the dispersion relations of the surface states are changed in a subtle fashion.

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preprint2010arXiv

Transmission of topological surface states through surface barriers

Topological surface states are a class of novel electronic states that are of potential interest in quantum computing or spintronic applications. Unlike conventional two-dimensional electron states, these surface states are expected to be immune to localization and to overcome barriers caused by material imperfection. Previous experiments have demonstrated that topological surface states do not backscatter between equal and opposite momentum states, owing to their chiral spin texture. However, so far there is no evidence that these states in fact transmit through naturally occurring surface defects. Here we use a scanning tunnelling microscope to measure the transmission and reflection probabilities of topological surface states of antimony through naturally occurring crystalline steps separating atomic terraces. In contrast to nontopological surface states of common metals (copper, silver and gold), which are either reflected or absorbed by atomic steps, we show that topological surface states of antimony penetrate such barriers with high probability. This demonstration of the extended nature of antimony's topological surface states suggests that such states may be useful for high current transmission even in the presence of atomic scale irregularities-an electronic feature sought to efficiently interconnect nanoscale devices.

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preprint2009arXiv

p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications

The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low level substitutions (1 percent or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n-type material. p-type single crystals with ab plane Seebeck coefficients of +180 microVK-1 at room temperature are reported. These crystals show a giant anomalous peak in the Seebeck coefficient at low temperatures, reaching +120 microVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p-type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

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preprint2009arXiv

Superconductivity in CuxBi2Se3 and its implications for pairing in the undoped topological insulator

Bi2Se3 is one of a handful of known topological insulators. Here we show that copper intercalation in the van der Waals gaps between the Bi2Se3 layers, yielding an electron concentration of ~ 2 x 10^20cm-3, results in superconductivity at 3.8 K in CuxBi2Se3 for x between 0.12 and 0.15. This demonstrates that Cooper pairing is possible in Bi2Se3 at accessible temperatures, with implications for study of the physics of topological insulators and potential devices.

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preprint2003arXiv

First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$

Undoped CoS$_2$ is an isotropic itinerant ferromagnet with a continuous or nearly continuous phase transition at $T_{\rm C} = 122$ K. In the doped CoS$_{1.9}$Se$_{0.1}$ system, the Curie temperature is lowered to $T_{\rm C} = 90$ K, and the transition becomes clearly first order in nature. In particular we find a discontinuous evolution of the spin dynamics as well as strong time relaxation in the ferromagnetic Bragg intensity and small angle neutron scattering in vicinity of the ferromagnetic transition. In the ordered state the long-wavelength spin excitations were found to be conventional ferromagnetic spin-waves with negligible spin-wave gap ($ < 0.04$ meV), indicating that this system is also an excellent isotropic (soft) ferromagnet. In a wide temperature range up to $0.9T_{\rm C}$, the spin-wave stiffness $D(T)$ follows the prediction of the two-magnon interaction theory, $D(T) = D(0)(1 - AT^{5/2})$, with $D(0) = 131.7 \pm 2.8$ meV-Å$^{2}$. The stiffness, however, does not collapse as $T \to T_{\rm C}$ from below. Instead a quasielastic central peak abruptly develops in the excitation spectrum, quite similar to results found in the colossal magnetoresistance oxides such as (La-Ca)MnO$_3$.

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