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Researcher profile

Y. S. Hor

Y. S. Hor contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-phcond-mat.othercond-mat.str-elcond-mat.dis-nnphysics.comp-ph

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Published work

17 published item(s)

preprint2014arXiv

Dynamical Gate Tunable Supercurrents in Topological Josephson Junctions

Josephson junctions made of closely-spaced conventional superconductors on the surface of 3D topological insulators have been proposed to host Andreev bound states (ABSs) which can include Majorana fermions. Here, we present an extensive study of the supercurrent carried by low energy ABSs in Nb/Bi$_2$Se$_3$/Nb Josephson junctions in various SQUIDs as we modulate the carrier density in the Bi$_2$Se$_3$ barriers through electrostatic top gates. As previously reported, we find a precipitous drop in the Josephson current at a critical value of the voltage applied to the top gate. This drop has been attributed to a transition where the topologically trivial 2DEG at the surface is nearly depleted, causing a shift in the spatial location and change in nature of the helical surface states. We present measurements that support this picture by revealing qualitative changes in the temperature and magnetic field dependence of the critical current across this transition. In particular, we observe pronounced fluctuations in the critical current near total depletion of the 2DEG that demonstrate the dynamical nature of the supercurrent transport through topological low energy ABSs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Crystal Structure and Chemistry of Topological Insulators

Topological surface states, a new kind of electronic state of matter, have recently been observed on the cleaved surfaces of crystals of a handful of small band gap semiconductors. The underlying chemical factors that enable these states are crystal symmetry, the presence of strong spin orbit coupling, and an inversion of the energies of the bulk electronic states that normally contribute to the valence and conduction bands. The goals of this review are to briefly introduce the physics of topological insulators to a chemical audience and to describe the chemistry, defect chemistry, and crystal structures of the compounds in this emergent field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition

Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$ as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of a Ir$^{4+}$ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order, is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effects of iron doping on the topological insulator surfaces

Topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap. So far, most of the study on topological insulator surfaces has been limited to understanding their properties without strong Coulomb perturbation or breaking of time reversal symmetry. We have used deposited iron, with a large positive ionization state and significant magnetic moment as a strong probe to modify the surface electronic structure of the Bi2Se3 surface at the gap energy scale. We observe that such perturbation leads to the creation of multiple Dirac fermions consistent with Z2 or Mod(2) symmetry. Taken collectively, these results are a helpful guide in manipulating topological surfaces for probing fundamental physics or developing device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electron behavior in topological insulator based P-N overlayer interfaces

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optical conductivity of Bismuth-based topological insulator

The optical conductivity and the spectral weight of four topological insulators with increasing chemical compensation (Bi2Se3, Bi2-xCaxSe3, Bi2Se2Te, Bi2Te2Se) have been measured from 5 to 300 K and from sub-THz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra, through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks, that we assign to electronic transitions among localized states. From the far-infrared spectral weight of the most compensated sample (Bi2Te2Se) one can estimate a density of charge-carriers in the order of 10^17/cm^3 in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still affected by extrinsic charge excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Point-contact Andreev reflection spectroscopy of candidate topological superconductor Cu0.25Bi2Se3

We perform a point-contact Andreev reflection spectroscopic study of the topological superconducting material, Cu0.25Bi2Se3, in the ballistic regime using a normal-metal gold tip. We observe distinct point-contact spectra on the superconducting and non-superconducting regions of the crystal surface: the former shows a marked zero-bias conductance peak, indicative of unconventional superconductivity, while the latter exhibits a pseudogap-like feature. In both cases the measured differential conductance spectra exhibit a large linear background, preventing direct quantitative comparison with theory. We attribute this background to inelastic scattering at the tip-sample interface, and compare the background-subtracted spectra with a single-band p-wave model.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Signatures of Fractional Quantum Hall States in Topological Insulators

The fractional quantum Hall (FQH) state is a topological state of matter resulting from the many-body effect of interacting electrons and is of vast interest in fundamental physics. The experimental observation of topological surface states (SSs) in three-dimensional bulk solids has allowed the study of a correlated chiral Dirac fermion system, which can host a single Dirac valley without spin degeneracy. Recent theoretical studies suggest that the fractional quantum Hall effect (FQHE) might be observable in topological insulators. However, due to the dominant bulk conduction it is difficult to probe the strong correlation effect in topological insulators from resistivity measurements. Here we report the discovery of FQH states in Bi2Te3 from thermopower measurements. The surface thermopower is ten times greater than that of bulk, which makes possible the observation of fractional-filled Landau levels in SSs. Thermopower hence provides a powerful tool to investigate correlated Dirac fermions in topological insulators. Our observations demonstrate that Dirac topological SSs exhibit strongly correlated phases in a high magnetic field, and would enable studies of a variety of exotic fractional quantum Hall physics and other correlated phenomena in this newly discovered chiral Dirac system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators

Using angle-resolved photoemission spectroscopy, we report electronic structure for representative members of ternary topological insulators. We show that several members of this family, such as Bi2Se2Te, Bi2Te2Se, and GeBi2Te4, exhibit a singly degenerate Dirac-like surface state, while Bi2Se2S is a fully gapped insulator with no measurable surface state. One of these compounds, Bi2Se2Te, shows tunable surface state dispersion upon its electronic alloying with Sb (SbxBi2-xSe2Te series). Other members of the ternary family such as GeBi2Te4 and BiTe1.5S1.5 show an in-gap surface Dirac point, the former of which has been predicted to show nonzero weak topological invariants such as (1;111); thus belonging to a different topological class than BiTe1.5S1.5. The measured band structure presented here will be a valuable guide for interpreting transport, thermoelectric, and thermopower measurements on these compounds. The unique surface band topology observed in these compounds contributes towards identifying designer materials with desired flexibility needed for thermoelectric and spintronic device fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi$_2$Se$_3$

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage $V_g$. We find that the temperature $T$ and magnetic field dependent transport properties in the vicinity of this $V_g$ can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high mobility metallic channel that dominates at low $T$. The conductance (approximately 2 $\times$ 7$e^2/h$), weak anti-localization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for EFE topological insulator devices at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct observation of spin-polarized surface states in the parent compound of topological insulator Bi-Sb using spin-resolved-ARPES in a 3D Mott-polarimetry spin mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a $k$-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of first bulk (3D) topological insulator - topological order in bulk solids. [Invited article for NJP-IOP Focus issue on "Topological Insulators"]

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Realization of an isolated Dirac node and strongly modulated Spin Texture in the topological insulator Bi2Te3

The development of spin-based applications of topological insulators requires the knowledge and understanding of spin texture configuration maps as they change via gating in the vicinity of an isolated Dirac node. An isolated (graphene-like) Dirac node, however, does not exist in Bi2Te3. While the isolation of surface states via transport channels has been promisingly achieved in Bi2Te3, it is not known how spin textures modulate while gating the surface. Another drawback of Bi2Te3 is that it features multiple band crossings while chemical potential is placed near the Dirac node (at least 3 not one as in Bi2Se3 and many other topological insulators) and its buried Dirac point is not experimentally accessible for the next generation of experiments which require tuning the chemical potential near an isolated (graphene-like) Dirac node. Here, we image the spin texture of Bi2Te3 and suggest a simple modification to realize a much sought out isolated Dirac node regime critical for almost all potential applications (of topological nature) of Bi2Te3. Finally, we demonstrate carrier control in magnetically and nonmagnetically doped Bi2Te3 essential for realizing giant magneto-optical effects and dissipationless spin current devices involving a Bi2Te3-based platform.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Direct observation of spin-polarized surface states in the parent compound of a topological insulator using high-resolution spin-resolved-ARPES spectroscopy in a Mott-polarimetry mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a k-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of topological insulator states in the Bi-Sb series.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Discovery of several large families of Topological Insulator classes with backscattering-suppressed spin-polarized single-Dirac-cone on the surface

Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and fundamental physics. Experimental realization of many of the predicted topological phenomena requires finding multi-variant topological band insulators which can be multiply connected to magnetic semiconductors and superconductors. Here we present our theoretical prediction and experimental discovery of several new topological insulator classes in AB2X4(124), A2B2X5(225), MN4X7(147), A2X2X'(221) [A,B=Pb,Ge,Sb,Bi and M,N=Pb,Bi and X,X'=Chalcogen family]. We observe that these materials feature gaps up to about 0.35eV. Multi-variant nature allows for diverse surface dispersion tunability, Fermi surface spin-vortex or textured configurations and spin-dependent electronic interference signaling novel quantum transport processes on the surfaces of these materials. Our discovery also provides several new platforms to search for topological-superconductivity (arXiv:0912.3341v1 (2009)) in these exotic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi1.96Mn0.04Te3 and Bi1.91Mn0.09Te3 a second order ferromagnetic transition is observed, with Tc ~ 9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p-type. Angle resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2Te3 are also present in ferromagnetic Mn-doped Bi2-xMnxTe3, and that the dispersion relations of the surface states are changed in a subtle fashion.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transmission of topological surface states through surface barriers

Topological surface states are a class of novel electronic states that are of potential interest in quantum computing or spintronic applications. Unlike conventional two-dimensional electron states, these surface states are expected to be immune to localization and to overcome barriers caused by material imperfection. Previous experiments have demonstrated that topological surface states do not backscatter between equal and opposite momentum states, owing to their chiral spin texture. However, so far there is no evidence that these states in fact transmit through naturally occurring surface defects. Here we use a scanning tunnelling microscope to measure the transmission and reflection probabilities of topological surface states of antimony through naturally occurring crystalline steps separating atomic terraces. In contrast to nontopological surface states of common metals (copper, silver and gold), which are either reflected or absorbed by atomic steps, we show that topological surface states of antimony penetrate such barriers with high probability. This demonstration of the extended nature of antimony's topological surface states suggests that such states may be useful for high current transmission even in the presence of atomic scale irregularities-an electronic feature sought to efficiently interconnect nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Superconductivity in CuxBi2Se3 and its implications for pairing in the undoped topological insulator

Bi2Se3 is one of a handful of known topological insulators. Here we show that copper intercalation in the van der Waals gaps between the Bi2Se3 layers, yielding an electron concentration of ~ 2 x 10^20cm-3, results in superconductivity at 3.8 K in CuxBi2Se3 for x between 0.12 and 0.15. This demonstrates that Cooper pairing is possible in Bi2Se3 at accessible temperatures, with implications for study of the physics of topological insulators and potential devices.

0 citations0 reviewsNo code linkedOpen access