Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated manganite film during the spin injection into the capacitor from the nanoscale magnetized tip with an ultralow voltage of 0.1 V, where the threshold spin-polarized current density is ~104 A/cm2 at the tip/manganite interface. The probe-voltage-controlled domain wall motion in the capacitor demonstrates a critical framework for the fundamental understanding of the manipulation of the nano-magnet systems with low energy consumption.