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Researcher profile

Y. P. Feng

Y. P. Feng contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-conphysics.app-phphysics.atm-clusphysics.comp-ph

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Published work

9 published item(s)

preprint2022arXiv

Magnetic Kagome Superconductor CeRu$_2$

Materials with a kagome lattice provide a platform for searching for new electronic phases and investigating the interplay between correlation and topology. Various probes have recently shown that the kagome lattice can host diverse quantum phases with intertwined orders, including charge density wave states, bond density wave states, chiral charge order, and, rarely, superconductivity. However, reports of the coexistence of superconductivity and magnetic order in kagome materials remain elusive. Here we revisit a magnetic superconductor CeRu$_2$ with a kagome network formed by Ru atoms. Our first-principles calculations revealed a kagome flat band near the Fermi surface, indicative of flat-band magnetism. At ambient pressure, CeRu$_2$ exhibits a superconducting transition temperature ($T_{\text{c}}$) up to ~ 6 K and a magnetic order at ~ 40 K. Notably, superconductivity and related behavior can be tuned by adjusting the amount of Ru. We conducted a systematic investigation of the superconductivity and magnetic order in CeRu$_2$ via magnetic, resistivity, and structural measurements under pressure up to ~ 168 GPa. An unusual phase diagram that suggests an intriguing interplay between the compound's superconducting order parameters has been constructed. A $T_{\text{c}}$ resurgence was observed above pressure of ~ 28 GPa, accompanied by the sudden appearance of a secondary superconducting transition. Our experiments have identified tantalizing phase transitions driven by high pressure and suggest that the superconductivity and magnetism in CeRu$_2$ are strongly intertwined.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlattices

The electronic properties of SrRuO3/LaAlO3 (SRO/LAO) superlattices with different interlayer thicknesses of SRO layers were studied. As the thickness of SRO layers is reduced, the superlattices exhibit a metal-insulator transition implying transformation into a more localized state from its original bulk metallic state. The strain effect on the metal-insulator transition was also examined. The origin of the metal-insulator transition in ultrathin SRO film is discussed. All the superlattices, even those with SRO layers as thin as 2 unit cells, are ferromagnetic at low temperatures. Moreover, we demonstrate field effect devices based on such multilayer superlattice structures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nonlinear Insulator in Complex Oxides

The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator electrically inert at low energy. However, for complex oxides, the very concept of an insulator must be re-examined. Complex oxides behave differently from conventional insulators such as SiO2, on which the entire semiconductor industry is based, because of the presence of multiple defect levels within their band gap. As the semiconductor industry is moving to such oxides for high-dielectric (high-k) materials, we need to truly understand the insulating properties of these oxides under various electric field excitations. Here we report a new class of material called nonlinear insulators that exhibits a reversible electric-field-induced metal-insulator transition. We demonstrate this behaviour for an insulating LaAlO3 thin film in a metal/LaAlO3/Nb-SrTiO3 heterostructure. Reproducible transitions were observed between a low-resistance metallic state and a high-resistance non-metallic state when applying suitable voltages. Our experimental results exclude the possibility that diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer is occurring. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. An opposing voltage is required to deplete the charges from the defect states. Our ability to manipulate and control these defect states and, thus, the nonlinear insulating properties of complex oxides will open up a new path to develop novel devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electron Transport Properties of Atomic Carbon Nanowires between Graphene Electrodes

Long, stable and free-standing linear atomic carbon wires have been carved out from graphene recently [Meyer et al: Nature (London) 2008, 454, 319; Jin et al: Phys: Rev: Lett: 2009, 102, 205501]. They can be considered as the extremely narrow graphene nanoribbons or extremely thin carbon nanotubes. It might even be possible to make use of high strength and identical (without charity) carbon wires as a transport channel or on-chip interconnects for field-effect transistors. Here we investigate electron transport properties of linear atomic carbon wire-graphene junctions by nonequilibruim Green's function combined with density functional theory. For short wires, linear ballistic transport is observed in odd-numbered wire but destroyed by Peirerls distortion in even-numbered wire. For wires longer than 2.1 nm as fabricated above, however, the ballistic conductance of carbon wire-graphene junctions is remarkably robust against the Peierls distortion, structural imperfections, and hydrogen impurity adsorption of the linear carbon wires except oxygen impurities. As such, the epoxy groups might be the origin of low conductance experimentally observed in carbon wires. Moreover, double atomic carbon wires exhibit negative differential resistance (NDR) effect.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Perfect spin-fillter and spin-valve in carbon atomic chains

We report ab initio calculations of spin-dependent transport in single atomic carbon chains bridging two zigzag graphene nanoribbon electrodes. Our calculations show that carbon atomic chains coupled to graphene electrodes are perfect spin-filters with almost 100 % spin polarization. Moreover, carbon atomic chains can also show a very large bias-dependent magnetoresistance up to 1000000 % as perfect spin-valves. These two spin-related properties are independent on the length of carbon chains. Our report, the spin-filter and spin-valve are conserved in a single device simultaneously, opens a new way to the application of all-carbon composite spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to enhance the ferromagnetic coupling and to increase the solubility and activity.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor

We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $μ_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 μ_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.

0 citations0 reviewsNo code linkedOpen access