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Y. P. Feng

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con cond-mat.mes-hall physics.app-ph physics.atm-clus physics.comp-ph

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preprint2022arXiv

Magnetic Kagome Superconductor CeRu$_2$

Materials with a kagome lattice provide a platform for searching for new electronic phases and investigating the interplay between correlation and topology. Various probes have recently shown that the kagome lattice can host diverse quantum phases with intertwined orders, including charge density wave states, bond density wave states, chiral charge order, and, rarely, superconductivity. However, reports of the coexistence of superconductivity and magnetic order in kagome materials remain elusive. Here we revisit a magnetic superconductor CeRu$_2$ with a kagome network formed by Ru atoms. Our first-principles calculations revealed a kagome flat band near the Fermi surface, indicative of flat-band magnetism. At ambient pressure, CeRu$_2$ exhibits a superconducting transition temperature ($T_{\text{c}}$) up to ~ 6 K and a magnetic order at ~ 40 K. Notably, superconductivity and related behavior can be tuned by adjusting the amount of Ru. We conducted a systematic investigation of the superconductivity and magnetic order in CeRu$_2$ via magnetic, resistivity, and structural measurements under pressure up to ~ 168 GPa. An unusual phase diagram that suggests an intriguing interplay between the compound's superconducting order parameters has been constructed. A $T_{\text{c}}$ resurgence was observed above pressure of ~ 28 GPa, accompanied by the sudden appearance of a secondary superconducting transition. Our experiments have identified tantalizing phase transitions driven by high pressure and suggest that the superconductivity and magnetism in CeRu$_2$ are strongly intertwined.

preprint2020arXiv

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

preprint2016arXiv

Quantum anomalous Hall effect with field-tunable Chern number near Z2 topological critical point

We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material, TlBi(S$_{1-δ}$Se$_δ$)$_2$, we demonstrate that the QAH phases with different Chern numbers can be achieved by means of tuning the exchange field strength or the sample thickness near the Z2 topological critical point. Our physics scenario successfully reduces the necessary exchange coupling strength for a targeted Chern number. This QAH mechanism differs from the traditional QAH picture with a magnetic topological insulating thin film, where the "surface" states must involve and sometimes complicate the realization issue. Furthermore, we find that a given Chern number can also be tuned by a perpendicular electric field, which naturally occurs when a substrate is present.

preprint2014arXiv

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.

preprint2013arXiv

Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlattices

The electronic properties of SrRuO3/LaAlO3 (SRO/LAO) superlattices with different interlayer thicknesses of SRO layers were studied. As the thickness of SRO layers is reduced, the superlattices exhibit a metal-insulator transition implying transformation into a more localized state from its original bulk metallic state. The strain effect on the metal-insulator transition was also examined. The origin of the metal-insulator transition in ultrathin SRO film is discussed. All the superlattices, even those with SRO layers as thin as 2 unit cells, are ferromagnetic at low temperatures. Moreover, we demonstrate field effect devices based on such multilayer superlattice structures.

preprint2012arXiv

Cationic vacancy induced room-temperature ferromagnetism in transparent conducting anatase Ti_{1-x}Ta_xO_2 (x~0.05) thin films

We report room-temperature ferromagnetism in highly conducting transparent anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) indicated negligible magnetic contaminants in the films. The presence of ferromagnetism with concomitant large carrier densities was determined by a combination of superconducting quantum interference device (SQUID) magnetometry, electrical transport measurements, soft x-ray magnetic circular dichroism (SXMCD), XAS, and optical magnetic circular dichroism (OMCD) and was supported by first-principle calculations. SXMCD and XAS measurements revealed a 90% contribution to ferromagnetism from the Ti ions and a 10% contribution from the O ions. RBS/channelling measurements show complete Ta substitution in the Ti sites though carrier activation was only 50% at 5% Ta concentration implying compensation by cationic defects. The role of Ti vacancy and Ti3+ was studied via XAS and x-ray photoemission spectroscopy (XPS) respectively. It was found that in films with strong ferromagnetism, the Ti vacancy signal was strong while Ti3+ signal was absent. We propose (in the absence of any obvious exchange mechanisms) that the localised magnetic moments, Ti vacancy sites, are ferromagnetically ordered by itinerant carriers. Cationic-defect-induced magnetism is an alternative route to ferromagnetism in wide-band-gap semiconducting oxides without any magnetic elements.

preprint2011arXiv

Direct observation of room temperature high-energy resonant excitonic effects in graphene

Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of resonant exciton scales linearly with number of graphene layer (up to \emph{at least} 8 layers) implying quantum character of electrons in graphene. Furthermore, a prominent excitation at 5.4eV, which is a mixture of interband transitions from $π$ to $π^{*}$ at the M point and a $π$ plasmonic excitation, is observed. In contrast, for graphite the resonant exciton is not observable but strong interband transitions are seen instead. Supported by theoretical calculations, for $N \leq$ 28 the $σ_1$ is dominated by the resonant exciton, while for $N >$ 28 it is a mixture between exitonic and interband transitions. The latter is characteristic for graphite, indicating a crossover in the electronic structure. Our study shows that important elementary excitations in graphene occur at high binding energies and elucidate the differences in the way electrons interact in graphene and graphite.

preprint2010arXiv

Long-range Ferromagnetic Ordering and Magnetic Phase Transition in Metal-organic Frameworks

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preprint2010arXiv

Nonlinear Insulator in Complex Oxides

The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator electrically inert at low energy. However, for complex oxides, the very concept of an insulator must be re-examined. Complex oxides behave differently from conventional insulators such as SiO2, on which the entire semiconductor industry is based, because of the presence of multiple defect levels within their band gap. As the semiconductor industry is moving to such oxides for high-dielectric (high-k) materials, we need to truly understand the insulating properties of these oxides under various electric field excitations. Here we report a new class of material called nonlinear insulators that exhibits a reversible electric-field-induced metal-insulator transition. We demonstrate this behaviour for an insulating LaAlO3 thin film in a metal/LaAlO3/Nb-SrTiO3 heterostructure. Reproducible transitions were observed between a low-resistance metallic state and a high-resistance non-metallic state when applying suitable voltages. Our experimental results exclude the possibility that diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer is occurring. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. An opposing voltage is required to deplete the charges from the defect states. Our ability to manipulate and control these defect states and, thus, the nonlinear insulating properties of complex oxides will open up a new path to develop novel devices.

preprint2009arXiv

Electron Transport Properties of Atomic Carbon Nanowires between Graphene Electrodes

Long, stable and free-standing linear atomic carbon wires have been carved out from graphene recently [Meyer et al: Nature (London) 2008, 454, 319; Jin et al: Phys: Rev: Lett: 2009, 102, 205501]. They can be considered as the extremely narrow graphene nanoribbons or extremely thin carbon nanotubes. It might even be possible to make use of high strength and identical (without charity) carbon wires as a transport channel or on-chip interconnects for field-effect transistors. Here we investigate electron transport properties of linear atomic carbon wire-graphene junctions by nonequilibruim Green's function combined with density functional theory. For short wires, linear ballistic transport is observed in odd-numbered wire but destroyed by Peirerls distortion in even-numbered wire. For wires longer than 2.1 nm as fabricated above, however, the ballistic conductance of carbon wire-graphene junctions is remarkably robust against the Peierls distortion, structural imperfections, and hydrogen impurity adsorption of the linear carbon wires except oxygen impurities. As such, the epoxy groups might be the origin of low conductance experimentally observed in carbon wires. Moreover, double atomic carbon wires exhibit negative differential resistance (NDR) effect.

preprint2009arXiv

Perfect spin-fillter and spin-valve in carbon atomic chains

We report ab initio calculations of spin-dependent transport in single atomic carbon chains bridging two zigzag graphene nanoribbon electrodes. Our calculations show that carbon atomic chains coupled to graphene electrodes are perfect spin-filters with almost 100 % spin polarization. Moreover, carbon atomic chains can also show a very large bias-dependent magnetoresistance up to 1000000 % as perfect spin-valves. These two spin-related properties are independent on the length of carbon chains. Our report, the spin-filter and spin-valve are conserved in a single device simultaneously, opens a new way to the application of all-carbon composite spintronics.

preprint2007arXiv

Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to enhance the ferromagnetic coupling and to increase the solubility and activity.

preprint2006arXiv

Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor

We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $μ_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 μ_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.

preprint2000arXiv

Hysteresis measurement of anomalous microwave surface resistance in superconducting thin films

The anomalous decrease in microwave surface resistance, R_{s}, of superconducting YBa_{2}Cu_{3}O_{7-d} (YBCO) thin films in the presence of a low dc magnetic field is studied using a microstrip resonator technique. We have done a dc field hysteresis measurement of R_{s} to study the effects of vortex penetration on the anomalous effect. It is shown that the anomaly happens at a field level far below the low critical field, H_{c1,strip}, of the superconducting microstrip and vortex (Abrikosov) penetration would eliminate the anomalous effect observed at low field. This implies that the anomalous effect is not contributed by vortices.