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Source author record

Y. M. Lu

Y. M. Lu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-conphysics.chem-phphysics.optics

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Published work

4 published item(s)

preprint2013arXiv

A new collective mode in YBCO observed by time-domain reflectometry

We report the observation of coherent oscillations associated with charge density wave (CDW) order in the underdoped cuprate superconductor YBa2Cu3O6+x by time-resolved optical reflectivity. Oscillations with frequency 1.87 THz onset at approximately 105 K and 130 K for dopings of x = 0.67 (ortho-VIII) and x = 0.75 (ortho-III), respectively. Upon cooling below the superconducting critical temperature (T_c), the oscillation amplitude is enhanced, the phase shifts by π, and the frequency softens by δν/ ν~7%. A bi-quadratically coupled Landau-Ginzburg model qualitatively describes this behavior as arising from competition between superconducting and CDW orders.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dynamical Interplay between Coexisting Orders in the Electron-Doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_4

We use coherent pump-probe spectroscopy to measure the photoinduced reflectivity \DeltaR, and complex dielectric function, δ\in, of the electron-doped cuprate superconductor Nd_{2-x}Ce_xCuO_{4+δ} at a value of x near optimal doping, as a function of time, temperature, and laser fluence. We observe the onset of a negative \DeltaR at T=85 K, above the superconducting transition temperature, T_c, of 23 K, that exhibits a form of scaling consistent with critical fluctuations in the time domain. A positive ΔR onsets at T_c that we associate with superconducting order. We find that the two signals are strongly coupled below T_c, in a manner that suggests a repulsive interaction between superconductivity and antiferromagnetic correlations.

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preprint2012arXiv

Phototransistor Behavior Based on Dye-Sensitized Solar Cell

In the present work, a light-controlled device cell is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized by three types of transport behaviors: linear increase, saturated plateau and breakdown-like increase, which are actually of the typical performances for a photo-gated transistor. Moreover, an asymmetric behavior is observed in the voltage-current loops, which is believed to arise from the difference in the effective photo-conducting areas. The photovoltaic voltage between the shared counter electrode and drain (VCE-D) is investigated as well, clarifying that the predominant dark process in source and the predominant photovoltaic process in drain are series connected, modifying the electric potential levels and thus resulting in the characteristic phototransistor behaviors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Unconventional Scaling of the Anomalous Hall Effect Accompanying Electron Localization Correction in the Dirty Regime

Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σ_AH \propto σ^1.6_xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.

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