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Source author record

Y. J. Dong

Y. J. Dong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2014arXiv

Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons

We investigate the spin-dependent electric and thermoelectric properties of ferromagnetic zigzag-graphyne nanoribbons (ZGNRs) using the density-functional theory combined with the non-equilibrium Green's function method. A giant magnetoresistance is obtained in the pristine even-width ZGNRs and can be as high as 10e6 %. However, for the doped systems, a large magnetoresistance behavior may appear in the odd-width ZGNRs rather than the even-width ones. This suggests that the magnetoresistance can be manipulated in a wide range by the dopants on edges of ZGNRs. Another interesting phenomenon is that in the B- and N-doped even-width ZGNRs the spin Seebeck coefficient is always larger than the charge Seebeck coefficient, and a pure-spin-current thermospin device can be achieved at specific temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Half-metallicity in aluminum-doped zigzag silicene nanoribbons

The spin-dependent electronic structures of aluminum-(Al) doped zigzag silicene nanoribbons (ZSiNRs) are investigated by first-principles calculations. When ZSiNRs are substitutionally doped by a single Al atom on different sites in every three primitive cells, they become half-metallic in some cases, a property that can be used in spintronic devices. More interestingly, spin-down electrons can be transported at the Fermi energy when the Al atom is placed on the sub-edge site. In contrast, spin-up electrons can be transported at the Fermi energy when the ZSiNRs are doped on sites near their center. The magnetic moment on edge is considerably suppressed if the Al atom is doped on edge or near-edge sites. Similar results are obtained for a phosphorus-(P) and boron-(B) doped ZSiNR. When two or more Si atoms are replaced by Al atoms, in general the half-metallic behavior is replaced by a metallic, spin gapless semiconducting or semiconducting one. When a line of six Si atoms, along the ribbon's width, are replaced by Al atoms, the spin resolution of the band structure is suppressed and the system becomes nonmagnetic.

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preprint2014arXiv

High performance current and spin diode of atomic carbon chain between transversely symmetric ribbon electrodes

We demonstrate that giant current and high spin rectification ratios can be achieved in atomic carbon chain devices connected between two symmetric ferromagnetic zigzag-graphene-nanoribbon electrodes. The spin dependent transport simulation is carried out by density functional theory combined with the non-equilibrium Green's function method. It is found that the transverse symmetries of the electronic wave functions in the nanoribbons and the carbon chain are critical to the spin transport modes. In the parallel magnetization configuration of two electrodes, pure spin current is observed in both linear and nonlinear regions. However, in the antiparallel configuration, the spin-up (down) current is prohibited under the positive (negative) voltage bias, which results in a spin rectification ratio of order 104. When edge carbon atoms are substituted with boron atoms to suppress the edge magnetization in one of the electrodes, we obtain a diode with current rectification ratio over 10e6.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Vacancy Effects on Electric and Thermoelectric Properties of Zigzag Silicene Nanoribbons

We study the crystal reconstruction in the presence of monovacancies (MVs), divacancies (DVs) and linear vacancies (LVs) in a zigzag silicene nanoribbon (ZSiNR) with transversal symmetry. Their influence on the electric and thermoelectric properties is assessed by the density functional theory combined with the nonequilibrium Green's functions. In particular, we focus on the spin resolved conductance, magnetoresistance and current-voltage curves. A 5-atom-ring is formed in MVs, a 5-8-5 ring structure in DVs, and a 8-4-8-4 ring structure in LVs. The linear conductance becomes strongly spin dependent when the transversal symmetry is broken by vacancies especially if they are located on the ribbon's edges. The giant magnetoresistance can be smeared by asymmetric vacancies. Single spin negative differential resistance may appear in the presence of LVs and asymmetric MVs or DVs. A strong spin Seebeck effect is expected at room temperature in ZSiNRs with LVs.

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