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Researcher profile

M. X. Zhai

M. X. Zhai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2014arXiv

Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons

We investigate the spin-dependent electric and thermoelectric properties of ferromagnetic zigzag-graphyne nanoribbons (ZGNRs) using the density-functional theory combined with the non-equilibrium Green's function method. A giant magnetoresistance is obtained in the pristine even-width ZGNRs and can be as high as 10e6 %. However, for the doped systems, a large magnetoresistance behavior may appear in the odd-width ZGNRs rather than the even-width ones. This suggests that the magnetoresistance can be manipulated in a wide range by the dopants on edges of ZGNRs. Another interesting phenomenon is that in the B- and N-doped even-width ZGNRs the spin Seebeck coefficient is always larger than the charge Seebeck coefficient, and a pure-spin-current thermospin device can be achieved at specific temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Half-metallicity in aluminum-doped zigzag silicene nanoribbons

The spin-dependent electronic structures of aluminum-(Al) doped zigzag silicene nanoribbons (ZSiNRs) are investigated by first-principles calculations. When ZSiNRs are substitutionally doped by a single Al atom on different sites in every three primitive cells, they become half-metallic in some cases, a property that can be used in spintronic devices. More interestingly, spin-down electrons can be transported at the Fermi energy when the Al atom is placed on the sub-edge site. In contrast, spin-up electrons can be transported at the Fermi energy when the ZSiNRs are doped on sites near their center. The magnetic moment on edge is considerably suppressed if the Al atom is doped on edge or near-edge sites. Similar results are obtained for a phosphorus-(P) and boron-(B) doped ZSiNR. When two or more Si atoms are replaced by Al atoms, in general the half-metallic behavior is replaced by a metallic, spin gapless semiconducting or semiconducting one. When a line of six Si atoms, along the ribbon's width, are replaced by Al atoms, the spin resolution of the band structure is suppressed and the system becomes nonmagnetic.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin negative differential resistance in edge doped zigzag graphene nanoribbons

The nonlinear spin-dependent transport properties in zigzag graphene nanoribbons (ZGNRs) edge doped by an atom of group III and V elements are studied systematically using density functional theory combined with non-equilibrium Greens functions. The dopant type, acceptor or donor, and the geometrical symmetry, odd or even, are found critical in determining the spin polarization of the current and the current-voltage characteristics. For ZGNRs substitutionally doped on the lower-side edge, the down (up) spin current dominates in odd-(even-)width ZGNRs under a bias voltage around 1V. Remarkably, in even-width ZGNRs, doped by group III elements (B and Al), negative differential resistance (NDR) occurs only for down spins. The bias range of the spin NDR increases with the width of ZGNRs. The clear spin NDR is not observed in any odd-width ZGNRs nor in even-width ZGNRs doped by group V elements (N, and P). This peculiar spin NDR of edge doped ZGNRs suggests potential applications in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Vacancy Effects on Electric and Thermoelectric Properties of Zigzag Silicene Nanoribbons

We study the crystal reconstruction in the presence of monovacancies (MVs), divacancies (DVs) and linear vacancies (LVs) in a zigzag silicene nanoribbon (ZSiNR) with transversal symmetry. Their influence on the electric and thermoelectric properties is assessed by the density functional theory combined with the nonequilibrium Green's functions. In particular, we focus on the spin resolved conductance, magnetoresistance and current-voltage curves. A 5-atom-ring is formed in MVs, a 5-8-5 ring structure in DVs, and a 8-4-8-4 ring structure in LVs. The linear conductance becomes strongly spin dependent when the transversal symmetry is broken by vacancies especially if they are located on the ribbon's edges. The giant magnetoresistance can be smeared by asymmetric vacancies. Single spin negative differential resistance may appear in the presence of LVs and asymmetric MVs or DVs. A strong spin Seebeck effect is expected at room temperature in ZSiNRs with LVs.

0 citations0 reviewsNo code linkedOpen access