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Y. Ikemoto

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cond-mat.str-el cond-mat.supr-con

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preprint2019arXiv

Optical Conductivity Study of $f$ Electron States in YbCu$_2$Ge$_2$ at High Pressures to 20 GPa

Optical conductivity [$σ(ω)$] of YbCu$_2$Ge$_2$ has been measured at external pressures ($P$) to 20 GPa, to study the $P$ evolution of $f$ electron hybridized states. At $P$=0, $σ(ω)$ shows a marked mid-infrared (mIR) peak at 0.37 eV, which is due to optical excitations from $f^{14}$ (Yb$^{2+}$) state located below the Fermi level. With increasing $P$, the mIR peak shows significant shifts to lower energy, reaching 0.18 eV at $P$=20 GPa. This result indicates that the $f^{14}$ energy level increases toward the Fermi level with $P$. Such a shift of the $f$ electron level with $P$ has been expected from theoretical considerations, but had never been demonstrated by spectroscopic experiment under high $P$. The obtained results are also analyzed in terms of the $P$ evolution of the conduction-$f$ electron hybridization.

preprint2015arXiv

Emergence of charge degrees of freedom under high pressure in an organic dimer-Mott insulator $β^{\prime}$-(BEDT-TTF)$_2$ICl$_2$

To elucidate the pressure evolution of the electronic structure in an antiferromagnetic dimer-Mott (DM) insulator $β^{\prime}$-(BEDT-TTF)$_2$ICl$_2$, which exhibits superconductivity at 14.2 K under 8 GPa, we measured the polarized infrared (IR) optical spectra under high pressure. At ambient pressure, two characteristic bands due to intra- and interdimer charge transfers have been observed in the IR spectra, supporting that this salt is a typical half-filled DM insulator at ambient pressure. With increasing pressure, however, the intradimer charge transfer excitation shifts to much lower energies, indicating that the effective electronic state changes from half-filled to 3/4-filled as a result of weakening of dimerization. This implies that the system approaches a charge-ordered state under high pressure, in which charge degrees of freedom emerge as an important factor. The present results suggest that charge fluctuation inside of dimers plays an important role in the high-temperature superconductivity.

preprint2014arXiv

Collective excitation of a short-range charge ordering in $θ$-$\mbox{(BEDT-TTF)}_2\mbox{CsZn(SCN)}_4$

We find a characteristic low-energy peak structure located in the range of 100-300 cm$^{-1}$ in the optical conductivity spectra of a quasi-two-dimensional organic compound with a triangular lattice, $θ$-$\mbox{(BEDT-TTF)}_2\mbox{CsZn(SCN)}_4$, in which two different types of short-range charge orderings (COs) coexist. Upon lowering the temperature, the low-energy peak becomes significant and shifts to much lower frequencies only for the polarization of ${E \parallel a}$, in contrast to the other broad electronic bands in the mid-infrared region. On introducing disorder, the low-energy peak is strongly suppressed in comparison with the broad electronic bands. This result indicates that the low-energy peak is attributed to a collective excitation that originates from the short-range CO with a relatively long-period $3\times3$ pattern. The present results shed light on the understanding of the low-energy excitation in the glassy electronic state, where the charge degrees of freedom remain at low temperatures.

preprint2012arXiv

Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure

Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conduction electron states. With increasing external pressure, the mid-infrared peak shifts to higher energy, and the spectral weight below the peak was further depleted. The obtained spectral data are analyzed in comparison with band calculation result and other reported physical properties. It is shown that the electronic structure of CeRu4Sb12 becomes similar to that of a narrow-gap semiconductor under external pressure.