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Y. Barlas

Y. Barlas contributes to research discovery and scholarly infrastructure.

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preprint2016arXiv

Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene

Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the hole-doped regime. In charge neutral r-TLG, the orbital degeneracy is broken first, and the layer degeneracy is broken last and only the in presence of an interlayer potential U. In the phase space of U and filling factor, we observe an intriguing hexagon pattern, which is accounted for by a model based on crossings between symmetry-broken LLs.

preprint2014arXiv

Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene

Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in spontaneous symmetry breaking, which is responsible for a large class of physical phenomena ranging from mass generation in high energy physics to correlated states such as superconductivity and magnetism in condensed matter. Here, using transport measurements, we show that rhombohedral-stacked trilayer graphene (r-TLG) offers a simple, yet novel and tunable, platform for study of various phases with spontaneous or field-induced broken symmetries. Here, we show that, contrary to predictions by tight-binding calculations, rhombohedral-stacked trilayer graphene (r-TLG) is an intrinsic insulator, with a giant interaction-induced gap Δ~42meV. This insulating state is a spontaneous layer antiferromagnetic with broken time reversal symmetry, and can be suppressed by increasing charge density n, an interlayer potential, a parallel magnetic field, or a critical temperature Tc~38K. This gapped collective state can be explored for switches with low input power and high on/off ratio.

preprint2012arXiv

Numerical studies of the fractional quantum Hall effect in systems with tunable interactions

The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional, and even non-Abelian, statistics of quasiparticles. One of the main limitations of the experimental systems based on GaAs has been the lack of tunability of the effective interactions between two-dimensional electrons, which made it difficult to stabilize some of the more fragile states, or induce phase transitions in a controlled manner. Here we review the recent studies that have explored the effects of tunability of the interactions offered by alternative two-dimensional systems, characterized by non-trivial Berry phases and including graphene, bilayer graphene and topological insulators. The tunability in these systems is achieved via external fields that change the mass gap, or by screening via dielectric plate in the vicinity of the device. Our study points to a number of different ways to manipulate the effective interactions, and engineer phase transitions between quantum Hall liquids and compressible states in a controlled manner.

preprint2012arXiv

Stability of the k=3 Read-Rezayi state in chiral two-dimensional systems with tunable interactions

The k=3 Read-Rezayi (RR) parafermion quantum Hall state hosts non-Abelian excitations which provide a platform for the universal topological quantum computation. Although the RR state may be realized at the filling factor ν=12/5 in GaAs-based two-dimensional electron systems, the corresponding quantum Hall state is weak and at present nearly impossible to study experimentally. Here we argue that the RR state can alternatively be realized in a class of chiral materials with massless and massive Dirac-like band structure. This family of materials encompasses monolayer and bilayer graphene, as well as topological insulators. We show that, compared to GaAs, these systems provide several important advantages in realizing and studying the RR state. Most importantly, the effective interactions can be tuned {\it in situ} by varying the external magnetic field, and by designing the dielectric environment of the sample. This tunability enables the realization of RR state with controllable energy gaps in different Landau levels. It also allows one to probe the quantum phase transitions to other compressible and incompressible phases.

preprint2011arXiv

Tunable interactions and phase transitions in Dirac materials in a magnetic field

A partially filled Landau level (LL) hosts a variety of correlated states of matter with unique properties. The ability to control these phases requires tuning the effective electron interactions within a LL, which has been difficult to achieve in GaAs-based structures. Here we consider a class of Dirac materials in which the chiral band structure, along with the mass term, gives rise to a wide tunability of the effective interactions by the magnetic field. This tunability is such that different phases can occur in a single LL, and phase transitions between them can be driven in situ. The incompressible, Abelian and non-Abelian, liquids are stabilized in interaction regimes different from GaAs. Our study points to a realistic method of controlling the correlated phases and studying the phase transitions between them in materials such as graphene, bilayer graphene, and topological insulators.