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Xujie Zhang

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3 published item(s)

preprint2022arXiv

ARMANI: Part-level Garment-Text Alignment for Unified Cross-Modal Fashion Design

Cross-modal fashion image synthesis has emerged as one of the most promising directions in the generation domain due to the vast untapped potential of incorporating multiple modalities and the wide range of fashion image applications. To facilitate accurate generation, cross-modal synthesis methods typically rely on Contrastive Language-Image Pre-training (CLIP) to align textual and garment information. In this work, we argue that simply aligning texture and garment information is not sufficient to capture the semantics of the visual information and therefore propose MaskCLIP. MaskCLIP decomposes the garments into semantic parts, ensuring fine-grained and semantically accurate alignment between the visual and text information. Building on MaskCLIP, we propose ARMANI, a unified cross-modal fashion designer with part-level garment-text alignment. ARMANI discretizes an image into uniform tokens based on a learned cross-modal codebook in its first stage and uses a Transformer to model the distribution of image tokens for a real image given the tokens of the control signals in its second stage. Contrary to prior approaches that also rely on two-stage paradigms, ARMANI introduces textual tokens into the codebook, making it possible for the model to utilize fine-grain semantic information to generate more realistic images. Further, by introducing a cross-modal Transformer, ARMANI is versatile and can accomplish image synthesis from various control signals, such as pure text, sketch images, and partial images. Extensive experiments conducted on our newly collected cross-modal fashion dataset demonstrate that ARMANI generates photo-realistic images in diverse synthesis tasks and outperforms existing state-of-the-art cross-modal image synthesis approaches.Our code is available at https://github.com/Harvey594/ARMANI.

preprint2020arXiv

Weakly Supervised Person Re-ID: Differentiable Graphical Learning and A New Benchmark

Person re-identification (Re-ID) benefits greatly from the accurate annotations of existing datasets (e.g., CUHK03 [1] and Market-1501 [2]), which are quite expensive because each image in these datasets has to be assigned with a proper label. In this work, we ease the annotation of Re-ID by replacing the accurate annotation with inaccurate annotation, i.e., we group the images into bags in terms of time and assign a bag-level label for each bag. This greatly reduces the annotation effort and leads to the creation of a large-scale Re-ID benchmark called SYSU-30$k$. The new benchmark contains $30k$ individuals, which is about $20$ times larger than CUHK03 ($1.3k$ individuals) and Market-1501 ($1.5k$ individuals), and $30$ times larger than ImageNet ($1k$ categories). It sums up to 29,606,918 images. Learning a Re-ID model with bag-level annotation is called the weakly supervised Re-ID problem. To solve this problem, we introduce a differentiable graphical model to capture the dependencies from all images in a bag and generate a reliable pseudo label for each person image. The pseudo label is further used to supervise the learning of the Re-ID model. When compared with the fully supervised Re-ID models, our method achieves state-of-the-art performance on SYSU-30$k$ and other datasets. The code, dataset, and pretrained model will be available at \url{https://github.com/wanggrun/SYSU-30k}.

preprint2012arXiv

The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.