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Xixiang Zhang

Xixiang Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.softcond-mat.str-elphysics.app-phphysics.chem-ph

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Published work

13 published item(s)

preprint2022arXiv

3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors

Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thermally induced generation and annihilation of magnetic chiral skyrmion bubbles and achiral bubbles in Mn-Ni-Ga Magnets

Magnetic chiral skyrmion bubbles and achiral bubbles are two independent magnetic domain structures, in which the former with equivalent winding number to skyrmions offers great promise as information carriers for further spintronic devices. Here, in this work, we experimentally investigate the generation and annihilation of magnetic chiral skyrmion bubbles and achiral bubbles in the Mn-Ni-Ga thin plate by using the Lorentz transmission electron microscopy (L-TEM). The two independent magnetic domain structures can be directly controlled after the field cooling manipulation by varying the titled angles of external magnetic fields. By imaging the magnetization reversal with increasing temperature, we found an extraordinary annihilation mode of magnetic chiral skyrmion bubbles and a non-linear frequency for the winding number reversal. Quantitative analysis of such dynamics was performed by using L-TEM to directly determine the barrier energy for the magnetization reversal of magnetic chiral skyrmion bubbles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Current-Induced Helicity Reversal of a Single Skyrmionic Bubble Chain in a Nanostructured Frustrated Magnet

Helicity indicates the in-plane magnetic-moment swirling direction of a skyrmionic configuration. The ability to reverse the helicity of a skyrmionic bubble via purely electrical means has been predicted in frustrated magnetic systems, however its experimental observation has remained challenging. Here, we experimentally demonstrate the current-driven helicity reversal of the skyrmionic bubble in a nanostructured frustrated Fe3Sn2 magnet. The critical current density required to trigger the helicity reversal is 109 - 1010 A/m2, with a corresponding pulse-width varying from 1 μs to 100 ns. Computational simulations reveal that both the pinning effect and dipole-dipole interaction play a crucial role in the helicity-reversal process.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High-flux water desalination with interfacial salt sieving effect in nanoporous carbon composite membranes

Nanoporous carbon composite membranes, comprising a layer of porous carbon fiber structures with an average channel width of 30-60 nm grown on a porous ceramic substrate, are found to exhibit robust desalination effect with high freshwater flux. In three different membrane processes of vacuum membrane distillation, reverse osmosis and forward osmosis, the carbon composite membrane showed 100% salt rejection with 3.5 to 20 times higher freshwater flux compared to existing polymeric membranes. Thermal accounting experiments found that at least 80% of the freshwater pass through the carbon composite membrane with no phase change. Molecular dynamics simulations revealed a unique salt rejection mechanism. When seawater is interfaced with either vapor or the surface of carbon, one to three interfacial atomic layers contain no salt ions. Below the liquid entry pressure, the salt solution is stopped at the openings to the porous channels and forms a meniscus, while the surface layer of freshwater can feed the surface diffusion flux that is fast-transported on the surfaces of the carbon fibers, driven by the chemical potential gradient. As the surface-transported water does not involve a phase change, hence that component involves no energy expenditure in the form of latent heat.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to low-10^19 cm-3 P doping and a dislocation density of 10^8 to 10^9 cm-2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2-8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that Si-Ge interdiffusion coefficient is proportional to n^2/n_i^2 for the conditions studied, which indicates that the interdiffusion in high Ge fraction range with n-type doping is dominated by V^(2-) defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dimensional cross-over of the bandgap transition in quasi-two-dimensional MoS2

The anisotropy of the electronic transition is an important physical property not only determining the materials' optical property, but also revealing the underlying character of the electronic states involved. Here we used momentum-resolved electron energy-loss spectroscopy to study the evolution of the anisotropy of the electronic transition involving the low energy valence electrons in the free-standing MoS2 systems as the layer thickness was reduced to monolayer. We used the orientation and the spectral-density analysis to show that indirect to direct band-gap transition is accompanied by a three- to two-dimensional anisotropy cross-over. The result provides a logical explanation for the large sensitivity of indirect transition to the change of thickness compared with that for direct transition. By tracking the energy of indirect transition, we also revealed the asymmetric response of the valence band and conduction band to the quantum confinement effect. Our results have implication for future optoelectronic applications of atomic thin MoS2.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1-xKxFe2As2 superconductors

We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystalline Sr0.6K0.4Fe2As2 superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while some others contain nanometer-scale particles sandwiched in between amorphous layers. We also find that there is significant oxygen enrichment at the grain boundaries. Such results explain the relatively low transport critical current density (Jc) of polycrystalline samples with respect to that of bicrystal films.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

1D goes 2D: A Kosterlitz Thouless transition in superconducting arrays of 4-Angstrom carbon nanotubes

We report superconducting resistive transition characteristics for array(s) of coupled 4-Angstrom single wall carbon nanotubes embedded in aluminophosphate-five (AFI) zeolite. The transition was observed to initiate at 15K with a slow resistance decrease switching to a sharp, order of magnitude drop between 7.5-6.0K. The transition has strong (anisotropic) magnetic field dependence. Differential resistance versus current (voltage) measurements indicate that the establishment of coherence proceeds in stages as the temperature is lowered below 15K. In particular, the sharp resistance drop and its attendant nonlinear IV characteristics are consistent with the manifestations of a Kosterlitz-Thouless (KT) transition that establishes quasi long range order in the plane transverse to the c-axis of the nanotubes, leading to an inhomogeneous system comprising 3D superconducting regions connected by weak links. Global coherence is established at below 5K with the appearance of a well-defined supercurrent gap at 2K.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electron Dynamics in Films Made of Transition Metal Nanograins Embedded in SiO2:Infrared Reflectivity and Nanoplasma Infrared Resonance

We report on near normal infrared reflectivity spectra of ~550 nm thick films made of cosputtered transition metal nanograins and SiO2 in a wide range of metal fractions. Co0.85(SiO2)0.15,with conductivity well above the percolation threshold has a frequency and temperature behavior according to what it is find in conducting metal oxides. The electron scattering rate displays an unique relaxation time characteristic of single type of carriers experiencing strong electron-phonon interactions. Using small polaron fits we identify those phonons as glass vibrational modes. Ni0.61(SiO2)0.39, with a metal fraction closer to the percolation threshold, undergoes a metal-non metal transition at ~77 K. Here, as it is suggested by the scattering rate nearly quadratic dependence, we broadly identify two relaxation times (two carrier contributions) associated to a Drude mode and a mid-infrared overdamped band, respectively. Disorder induced, the mid-infrared contribution drives the phase transition by thermal electron localization. Co0.51(SiO2)0.49 has the reflectivity of an insulator with a distinctive band at ~1450cm\^{-1} originating in electron promotion, localization, and defect induced polaron formation. Angle dependent oblique reflectivity of globally insulating Co0.38(SiO2)0.62, Fe0.34(SiO2)0.66, and Ni0.28(SiO2)0.72, reveals a remarkable resonance at that band threshold. We understand this as due to the excitation by normal to the film electric fields of defect localized electrons in the metallic nanoparticles

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