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Researcher profile

Xinxin Yang

Xinxin Yang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.str-eleess.SPphysics.atom-ph

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Published work

4 published item(s)

preprint2022arXiv

6G Radio Requirements to Support Integrated Communication, Localization, and Sensing

6G will be characterized by extreme use cases, not only for communication, but also for localization, and sensing. The use cases can be directly mapped to requirements in terms of standard key performance indicators (KPIs), such as data rate, latency, or localization accuracy. The goal of this paper is to go one step further and map these standard KPIs to requirements on signals, on hardware architectures, and on deployments. Based on this, system solutions can be identified that can support several use cases simultaneously. Since there are several ways to meet the KPIs, there is no unique solution and preferable configurations will be discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Floquet and Anomalous Floquet Weyl Semimetals

The periodic driving of a quantum system can enable new topological phases without analogs in static systems. This provides a route towards preparing non-equilibrium quantum phases rooted into the non-equilibrium nature by periodic driving engineering. Motivated by the ongoing considerable interest in topological semimetals, we are interested in the novel topological phases in the periodically driven topological semimetals without a static counterpart. We propose to design non-equilibrium topological semimetals in the regime of weakly driving field where the spectrum width of shares the same magnitude with the driving frequency. We identify two novel types of non-equilibrium Weyl semimetals (i.e., Floquet and anomalous Floquet Weyl semimetals) that do not exhibit analogues in equilibrium. The proposed setup is shown to be experimentally feasible using the state-of-the-art techniques used to control ultracold atoms in optical lattices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors that influence output conductance, especially at short channel lengths and-or large drain bias: short-channel electrostatics, saturation velocity, graphene-dielectric interface traps, and self-heating effects. As a testbed for our investigation, we analyzed fabricated GFETs with high extrinsin cutoff frequency fT,x (34 GHz) and fmax (37 GHz). Our simulations allow for a microscopic (local) analysis of the channel parameteres such as carrier concentration, drift and saturation velocities. For biases far away from the Dirac voltage, where the channel behaves as unipolar, we confirmed that the higher is the drift velocity, as close as possible to the saturation velocity, the greater fmax is. However, the largest fmax is recorded at biases near the crossover between unipolar and bipolar behavior, where it does not hold that the highest drift velocity maximizes fmax. In fact, the position and magnitude of the largest fmax depend on the complex interplay between the carrier concentration and total velocity which, in turn, are impacted by the self-heating. Importantly, this effect was found to severely limit radio-frequency performance, reducing the maximum fmax from around 60 to 40 GHz.

0 citations0 reviewsNo code linkedOpen access