Researcher profile

Xinwei Liu

Xinwei Liu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2023arXiv

Does Few-shot Learning Suffer from Backdoor Attacks?

The field of few-shot learning (FSL) has shown promising results in scenarios where training data is limited, but its vulnerability to backdoor attacks remains largely unexplored. We first explore this topic by first evaluating the performance of the existing backdoor attack methods on few-shot learning scenarios. Unlike in standard supervised learning, existing backdoor attack methods failed to perform an effective attack in FSL due to two main issues. Firstly, the model tends to overfit to either benign features or trigger features, causing a tough trade-off between attack success rate and benign accuracy. Secondly, due to the small number of training samples, the dirty label or visible trigger in the support set can be easily detected by victims, which reduces the stealthiness of attacks. It seemed that FSL could survive from backdoor attacks. However, in this paper, we propose the Few-shot Learning Backdoor Attack (FLBA) to show that FSL can still be vulnerable to backdoor attacks. Specifically, we first generate a trigger to maximize the gap between poisoned and benign features. It enables the model to learn both benign and trigger features, which solves the problem of overfitting. To make it more stealthy, we hide the trigger by optimizing two types of imperceptible perturbation, namely attractive and repulsive perturbation, instead of attaching the trigger directly. Once we obtain the perturbations, we can poison all samples in the benign support set into a hidden poisoned support set and fine-tune the model on it. Our method demonstrates a high Attack Success Rate (ASR) in FSL tasks with different few-shot learning paradigms while preserving clean accuracy and maintaining stealthiness. This study reveals that few-shot learning still suffers from backdoor attacks, and its security should be given attention.

preprint2022arXiv

Watermark Vaccine: Adversarial Attacks to Prevent Watermark Removal

As a common security tool, visible watermarking has been widely applied to protect copyrights of digital images. However, recent works have shown that visible watermarks can be removed by DNNs without damaging their host images. Such watermark-removal techniques pose a great threat to the ownership of images. Inspired by the vulnerability of DNNs on adversarial perturbations, we propose a novel defence mechanism by adversarial machine learning for good. From the perspective of the adversary, blind watermark-removal networks can be posed as our target models; then we actually optimize an imperceptible adversarial perturbation on the host images to proactively attack against watermark-removal networks, dubbed Watermark Vaccine. Specifically, two types of vaccines are proposed. Disrupting Watermark Vaccine (DWV) induces to ruin the host image along with watermark after passing through watermark-removal networks. In contrast, Inerasable Watermark Vaccine (IWV) works in another fashion of trying to keep the watermark not removed and still noticeable. Extensive experiments demonstrate the effectiveness of our DWV/IWV in preventing watermark removal, especially on various watermark removal networks.

preprint2020arXiv

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the B0.14Al0.86N alloy as part or entirety of the interlayer between the GaN buffer and the AlGaN barrier in the conventional GaN-based high electron mobility transistor (HEMT). The numerical results show considerable improvement of the two-dimensional electron gas (2DEG) concentration with small 2DEG leakage into the ternary layer by replacing the conventional AlN interlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybrid interlayer. Consequently, the transfer characteristics can be improved. The saturation current can be enhanced as well. For instance, the saturation currents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayer and the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for the AlN interlayer when VGS-Vth= +3 V.