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Researcher profile

Xinmao Yin

Xinmao Yin contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-ph

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Published work

6 published item(s)

preprint2026arXiv

Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling and energy efficiency. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation nanoelectronics and optoelectronic applications, boasting high electron mobility, mechanical strength, and a customizable band gap. Despite these merits, the Fermi level pinning effect introduces uncontrollable Schottky barriers at metal-2D-TMD contacts, challenging prediction through the Schottky-Mott rule. These barriers fundamentally lead to elevated contact resistance and limited current-delivery capability, impeding the enhancement of 2D-TMD transistor and integrated circuit properties. In this review, we succinctly outline the Fermi pinning effect mechanism and peculiar contact resistance behavior at metal/2D-TMD interfaces. Subsequently, highlights on the recent advances in overcoming contact resistance in 2D-TMDs devices, encompassing interface interaction and hybridization, van der Waals (vdW) contacts, prefabricated metal transfer and charge-transfer doping will be addressed. Finally, the discussion extends to challenges and offers insights into future developmental prospects.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Interfacial Strain Modulated Correlated Plasmons in La1.85Sr0.15CuO4 and Their Role in High-temperature Superconductivity

High-temperature superconductivity in cuprate materials remains a major challenge in physics due to the complexity of their strongly correlated electronic states. Interfacial strain is a powerful lever for tuning electronic correlations in complex oxides, offering new pathways to control emergent quantum phases. Here, we report the discovery of interfacial strain modulated correlated plasmons observed exclusively in superconducting La1.85Sr0.15CuO4 (LSCO) through spectroscopic ellipsometry. This form of plasmons is absent in the non-superconducting LSCO counterparts. Detailed analysis reveals that these correlated plasmons, arising from the collective excitations within Mott-correlated bands, are driven by long-range electronic correlations in the Cu-O planes. Furthermore, long-range electronic correlations, intricately modulated by interfacial strain, may play a crucial role in the emergence of superconductivity and in tuning the transition temperature. Dynamical cluster approximation (DCA) with quantum Monte Carlo (QMC) calculations of the extended Hubbard model suggest that long-range Coulomb interactions play an important role in LSCO, showing good agreement with our experimental findings. The collective evidence from both the experimental results and theoretical findings provides new insights into the nature of collective excitations and their pivotal role in the emergence of high-temperature superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The Emergence of Unconventional Plasmons Driven by Correlated Electron Interaction in B-site of 2D Hybrid Organic-Inorganic Perovskites

Hybrid organic-inorganic perovskites (HOIPs) have emerged to the forefront of optoelectronic materials advancement in the past few years. Due to the nature of organic compounds within the perovskite structure, its optoelectronic properties are affected by complex interaction and correlation effects between the organic and inorganic ions. Using spectroscopic ellipsometry, we observe two broad plasmonic excitation from the calculated loss function (LF) -Im[\varepislon^{-1} (ω)], peak A' and B' at 3.28 eV and 4.26 eV, respectively.The presence of these two asymmetric peaks in the spectroscopic ellipsometry (SE) spectra indicates the existence of unconventional plasmons at room temperature. This is inferred due to the absence of the zero-crossing in the real part of dielectric function \varepsilon_1 (ω). Through combined Near-Edge X-ray Absorption Fine Structure (NEXAFS) and Resonant Photoemission Spectroscopies (ResPES), we observe resonance enhancement peak close to 15 eV in the C K-edge region that unravels a charge transfer event due to the opening of an extra autoionization channel. Additionally, photoluminescence (PL) spectrum confirms the presence of broadband emission originating from the self-trapped emission excitons at 2.38 eV due to the soft 2D-HOIPs crystal structure. We believe that these phenomena directly impact the correlation strength in 2D-HOIPs. Our results have confirmed the existence of unconventional plasmons of 2D-HOIPs at room temperature. Such studies in the emission and plasmonic behavior of perovskites will pave the way for the efficient light emitting devices or lasers with minimal integrations of the materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A new route to spin-orbit torque engineering via oxygen manipulation

Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the combination of the spin transfer torque with the spin Hall effect enables more efficient manipulation. A versatile control mechanism of such spin-orbit torques is beneficial to envision device applications with competitive advantages over the existing schemes. Here we report that the oxidation manipulation of spin-orbit torque devices triggers a new mechanism, and the resulting torques are estimated to be about two times stronger than that of the spin Hall effect. Our result introduces an entirely new way to engineer the spin-orbit torques for device operation via oxygen manipulation. Combined with electrical gating for the control of the oxygen content, our finding may also pave the way for towards reconfigurable logic devices.

0 citations0 reviewsNo code linkedOpen access