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Xinhao Wang

Xinhao Wang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Revealing room temperature ferromagnetism in exfoliated Fe$_5$GeTe$_2$ flakes with quantum magnetic imaging

Van der Waals material Fe$_5$GeTe$_2$, with its long-range ferromagnetic ordering near room temperature, has significant potential to become an enabling platform for implementing novel spintronic and quantum devices. To pave the way for applications, it is crucial to determine the magnetic properties when the thickness of Fe5GeTe2 reaches the few-layers regime. However, this is highly challenging due to the need for a characterization technique that is local, highly sensitive, artifact-free, and operational with minimal fabrication. Prior studies have indicated that Curie temperature TC can reach up to close to room temperature for exfoliated Fe$_5$GeTe$_2$ flakes, as measured via electrical transport; there is a need to validate these results with a measurement that reveals magnetism more directly. In this work, we investigate the magnetic properties of exfoliated thin flakes of van der Waals magnet Fe$_5$GeTe$_2$ via a quantum magnetic imaging technique based on nitrogen vacancy diamond. Through imaging the stray fields, we confirm room-temperature magnetic order in Fe$_5$GeTe$_2$ thin flakes with thickness down to 7 units cell. The stray field patterns and their response to magnetizing fields with different polarities point to a perpendicular easy-axis anisotropy. Furthermore, we perform imaging at different temperatures and determine the Curie temperature of the flakes at Tc~300 K. These results provide the basis for realizing a room-temperature monolayer ferromagnet with Fe$_5$GeTe$_2$. This work also demonstrates that the imaging technique enables a rapid screening of multiple flakes simultaneously, thereby paving the way towards high throughput characterization of potential 2D magnets near room temperature.

preprint2022arXiv

Universal and Efficient p-Doping of Organic Semiconductors by Electrophilic Attack of Cations

Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to a small number of OSCs, seriously limiting their general application. Herein, we reveal a novel p-doping mechanism by investigating the interactions between the dopant trityl cation and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of alkylated ions that induce electron transfer from neighboring P3HT chains, resulting in p-doping. This unique p-doping mechanism can be employed to dope various OSCs including those with high ionization energy (IE=5.8 eV). Moreover, this doping mechanism endows trityl cation with strong doping ability, leading to polaron yielding efficiency of 100 % and doping efficiency of over 80 % in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities towards highly efficient doping of OSCs.