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Xin-Dian Liu

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cond-mat.dis-nn cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Electrical transport properties of thick and thin Ta-doped SnO$_2$ films

Ta-doped SnO$_2$ films with high conductivity and high optical transparency have been successfully fabricated using rf-sputtering method and their electrical transport properties have been investigated. All films reveal degenerate semiconductor (metal) characteristics in electrical transport properties. For the thick films ($t\sim 1\,μ\rm{m}$ with $t$ being the thickness) deposited in pure argon, the electron-phonon scattering alone cannot explain the temperature dependent behaviors of resistivity, the interference effect between electron-phonon and electron-impurity scattering should be considered. For the $t\lesssim 36$ nm films, both conductivity and the Hall coefficient show linear relation with the logarithm of temperature ($\ln T$) from $\sim$100 K down to liquid helium temperature. The $\ln T$ behaviors of conductivity and Hall coefficient cannot be explained by the Altshuler-Aronov type electron-electron interaction effect, but can be quantitatively interpreted by the electron-electron interaction effects in the presence of granularity. Our results not only provide strong supports for the theoretical results on the electron-phonon-impurity interference effect, but also confirm the validity of the theoretical predictions of charge transport in granular metals in strong coupling regime.

preprint2018arXiv

Electron effective mass and electronic structure in nonstoichiometric a-IGZO films

The transport properties and optical transmittance and absorption spectra for the nostoichiometric amorphous Indium Gallium Zinc Oxide (a-IGZO) films with Gallium and Zinc deficiencies are investigated. The resistivity and carrier concentration variation with temperature both reveal that the films possess degenerate semiconductor (or metal) characteristics. The thermopower is negative and decreases linearly with decreasing temperature, indicating the electron diffusion thermopower governs the thermal transport process in each film. Using free-electron-like model, we extracted the electron effective mass, which is about three times as large as that of the stoichiometric one and increases with increasing carrier (electron) concentration. Neglecting the variation in the energy with the wavevector near the valence band maximum and using the free-electron-like model, we also obtained the electron effective mass via the optical absorption spectra measurement. The magnitude of the effective mass obtained via optical spectra measurement is comparable to that obtained via thermopower measurement for each film. Our results strongly suggest that the nostoichiometric a-IGZO films possess free-electron-like pseudo-energy-bandstructure.

preprint2015arXiv

Simultaneous observation of small- and large-energy-transfer electron-electron scattering in three dimensional indium oxide thick films

In three dimensional (3D) disordered metals, the electron-phonon (\emph{e}-ph) scattering is the sole significant inelastic process. Thus the theoretical predication concerning the electron-electron (\emph{e}-\emph{e}) scattering rate $1/τ_φ$ as a function of temperature $T$ in 3D disordered metal has not been fully tested thus far, though it was proposed 40 years ago [A. Schmid, Z. Phys. \textbf{271}, 251 (1974)]. We report here the simultaneous observation of small- and large-energy-transfer \emph{e}-\emph{e} scattering in 3D indium oxide thick films. In temperature region of $T\gtrsim100$\,K, the temperature dependence of resistivities curves of the films obey Bloch-Grüneisen law, indicating the films possess degenerate semiconductor characteristics in electrical transport property. In the low temperature regime, $1/τ_φ$ as a function of $T$ for each film can not be ascribed to \emph{e}-ph scattering. To quantitatively describe the temperature behavior of $1/τ_φ$, both the 3D small- and large-energy-transfer \emph{e}-\emph{e} scattering processes should be considered (The small- and large-energy-transfer \emph{e}-\emph{e} scattering rates are proportional to $T^{3/2}$ and $T^2$, respectively). In addition, the experimental prefactors of $T^{3/2}$ and $T^{2}$ are proportional to $k_F^{-5/2}\ell^{-3/2}$ and $E_F^{-1}$ ($k_F$ is the Fermi wave number, $\ell$ is the electron elastic mean free path, and $E_F$ is the Fermi energy), respectively, which are completely consistent with the theoretical predications. Our experimental results fully demonstrate the validity of theoretical predications concerning both small- and large-energy-transfer \emph{e}-\emph{e} scattering rates.