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Xie-Gang Zhu

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2022arXiv

The effect of $f$-$c$ hybridization on the $γ\rightarrowα$ phase transition of cerium studied by lanthanum doping

The hybridization between the localized 4$f$ level ($f$) with conduction ($c$) states in $γ$-Ce upon cooling has been previously revealed in single crystalline thin films experimentally and theoretically, whereas its influence on the $γ\rightarrowα$ phase transition was not explicitly verified, due to the fact that the phase transition happened in the bulk-layer, leaving the surface in the $γ$ phase. Here in our work, we circumvent this issue by investigating the effect of alloying addition of La on Ce, by means of crystal structure, electronic transport and ARPES measurements, together with a phenomenological periodic Anderson model and a modified Anderson impurity model. Our current researches indicate that the weakening of $f$-$c$ hybridization is the major factor in the suppression of $γ\rightarrowα$ phase transition by La doping. The consistency of our results with the effects of other rare earth and actinide alloying additions on the $γ\rightarrowα$ phase transition of Ce is also discussed. Our work demonstrates the importance of the interaction of $f$ and $c$ electrons in understanding the unconventional phase transition in Ce, which is intuitive for further researches on other rare earth and actinide metals and alloys with similar phase transition behaviors.

preprint2020arXiv

Kondo scenario of the γ-α phase transition in single crystalline Cerium thin films

The physical mechanism driving the $γ$-$α$ phase transition of face-centre-cubic (fcc) cerium (Ce) remains controversial until now. In this work, high quality single crystalline fcc-Ce thin films were grown on Graphene/6$H$-SiC(0001) substrate, and explored by XRD and ARPES measurement. XRD spectra showed a clear $γ$-$α$ phase transition at $T_{γ-α}\approx$ 50 K, which is retarded by strain effect from substrate comparing with $T_{γ-α}$ (about 140 K) of the bulk Ce metal. However, APRES spectra did not show any signature of $α$-phase emerging in the surface-layer from 300 K to 17 K, which implied that $α$-phase might form at the bulk-layer of our Ce thin films. Besides, an evident Kondo dip near Fermi energy was observed in the APRES spectrum at 80 K, indicting the formation of Kondo singlet states in $γ$-Ce. Furthermore, the DFT+DMFT calculations were performed to simulate the electronic structures and the theoretical spectral functions agreed well with the experimental ARPES spectra. In $γ$-Ce, the behavior of the self-energy's imaginary part at low frequency not only confirmed that the Kondo singlet states emerged at $T_{\rm KS} \geq 80$ K, but also implied that they became coherent states at a lower characteristic temperature ($T_{\rm coh}\sim 40$ K) due to the indirect RKKY interaction among $f$-$f$ electrons. Besides, $T_{\rm coh}$ from the theoretical simulation was close to $T_{γ-α}$ from the XRD spectra. These issues suggested that the Kondo scenario might play an important role in the $γ$-$α$ phase transition of cerium thin films.

preprint2019arXiv

Experimental Evidence of the Topological Surface States in Mg3Bi2 Films Grown by Molecular Beam Epitaxy

Type-II nodal line semimetal (NLS) is a new quantum state hosting one-dimensional closed loops formed by the crossing of two bands which have the same sign in their slopes along the radial direction of the loop. According to the theoretical prediction, Mg3Bi2 is an ideal candidate for studying the type-II NLS by tuning its spin-orbit coupling (SOC). In this paper, high quality Mg3Bi2 films are grown by molecular beam epitaxy (MBE). By in-situ angle resolved photoemission spectroscopy (ARPES), a pair of surface resonance bands (SRBs) around Gamma point is clearly seen. It shows that Mg3Bi2 films grown by MBE is Mg(1)-terminated by comparing the ARPES data with the first principles calculations results. And, the temperature dependent weak anti-localization (WAL) effect in Mg3Bi2 films is observed under low magnetic field, which shows a clear two dimensional (2D) e-e scattering characteristics by fitting with the Hikami-Larkin-Nagaoka (HLN) model. Combining with ARPES, magneto-transport measurements and the first principles calculations, this work proves that Mg3Bi2 is a semimetal with topological surface states TSSs, which paves the way for Mg3Bi2 as an ideal materials platform for studying the exotic features of type-II nodal line semimetals (NLSs) and the topological phase transition by tuning its SOC.

preprint2014arXiv

Topological surface states on Bi$_{1-x}$Sb$_x$: Dependence on surface orientation, surface termination and stability

Topological insulators support metallic surface states whose existence is protected by the bulk band structure. It has been predicted early that the topology of the surface state Fermi contour should depend on several factors, such as the surface orientation and termination and this raises the question to what degree a given surface state is protected by the bulk electronic structure upon structural changes. Using tight-binding calculations, we explore this question for the prototypical topological insulator Bi$_{1-x}$Sb$_x$, studying different terminations of the (111) and (110) surfaces. We also consider the implications of the topological protection for the (110) surfaces for the semimetals Bi and Sb

preprint2013arXiv

Tailoring the electronic texture of a topological insulator via its surface orientation

Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several topological insulator materials are currently known, the existence and topology of these metallic states have only ever been probed for one particular surface orientation of a given material. For most topological insulators, such as Bi$_{1-x}$Sb$_{x}$ and Bi$_2$Se$_3$, this surface is the closed-packed (111) surface and it supports one topologically guaranteed surface state Dirac cone. Here we experimentally realise a non closed-packed surface of a topological insulator, Bi$_{1-x}$Sb$_{x}$(110), and probe the surface state topology by angle-resolved photoemission. As expected, this surface also supports metallic states but the change in surface orientation drastically modifies the band topology, leading to three Dirac cones instead of one, in excellent agreement with the theoretical predictions but in contrast to any other experimentally studied TI surface. This illustrates the possibility to tailor the basic topological properties of the surface via its crystallographic direction. Here it introduces a valley degree of freedom not previously achieved for topological insulator systems.

preprint2012arXiv

Crystal structure and epitaxy of Bi2Te3 films grown on Si

We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depends on that of their substrates, with in-plane epitaxial relationships of Bi2Te3 [2 1 -3 0] || Si [1 -1 0] and Bi2Te3 [0 1 -1 0] || Si [1 1 -2] along which the lattices of 1x3 Bi2Te3 and 2x2 Si supercells are well matched. As the samples age, we observe loss of crystalline Bi2Te3 film thickness accompanied with roughening of the crystalline interfaces, formation of new crystalline phases as well as compositional and structural modification of the Si substrate, consistent with the diffusion of Te into the Si substrate.