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Xiaoyi Liu

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Published work

3 published item(s)

preprint2022arXiv

A Scheme for Deterministic N-photon State Generation Using Lithium Niobate on Insulator Device

Large-photon-number quantum state is a fundamental but non-resolved request for practical quantum information applications. Here we propose an N-photon state generation scheme that is feasible and scalable, using lithium niobate on insulator circuits. Such scheme is based on the integration of a common building block called photon-number doubling unit (PDU), for deterministic single-photon parametric down-conversion and up-conversion. The PDU relies on 10^7-optical-quality-factor resonator and mW-level on-chip power, which is within the current fabrication and experiment limits. N-photon state generation schemes, with cluster and GHZ state as examples, are shown for different quantum tasks.

preprint2022arXiv

NxtPost: User to Post Recommendations in Facebook Groups

In this paper, we present NxtPost, a deployed user-to-post content-based sequential recommender system for Facebook Groups. Inspired by recent advances in NLP, we have adapted a Transformer-based model to the domain of sequential recommendation. We explore causal masked multi-head attention that optimizes both short and long-term user interests. From a user's past activities validated by defined safety process, NxtPost seeks to learn a representation for the user's dynamic content preference and to predict the next post user may be interested in. In contrast to previous Transformer-based methods, we do not assume that the recommendable posts have a fixed corpus. Accordingly, we use an external item/token embedding to extend a sequence-based approach to a large vocabulary. We achieve 49% abs. improvement in offline evaluation. As a result of NxtPost deployment, 0.6% more users are meeting new people, engaging with the community, sharing knowledge and getting support. The paper shares our experience in developing a personalized sequential recommender system, lessons deploying the model for cold start users, how to deal with freshness, and tuning strategies to reach higher efficiency in online A/B experiments.

preprint2015arXiv

Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized monolayer silicon-doped graphene (SiG) in large area by chemical vapor deposition method. Raman spectroscopy and X-ray photoelectron spectroscopy measurements evidence silicon atoms are doped into graphene lattice with the doping level of 3.4 at%. The electrical measurement based on field effect transistor indicates that the band gap of graphene has been opened by silicon doping, which is around 0. 28 eV supported by the first-principle calculations, and the ultraviolet photoelectron spectroscopy demonstrates the work function of SiG is 0.13 eV larger than that of graphene. Moreover, the SiG/GaAs heterostructure solar cells show an improved power conversion efficiency of 33.7% in average than that of graphene/GaAs solar cells, which are attributed to the increased barrier height and improved interface quality. Our results suggest silicon doping can effectively engineer the band gap of monolayer graphene and SiG has great potential in optoelectronic device applications.