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Xiaoyang Ma

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3 publications

preprint2022arXiv

Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security

Hardware security has been a key concern in modern information technologies. Especially, as the number of Internet-of-Things (IoT) devices grows rapidly, to protect the device security with low-cost security primitives becomes essential, among which Physical Unclonable Function (PUF) is a widely-used solution. In this paper, we propose the first FeFET-based strong PUF exploiting the cycle-to-cycle (C2C) variation of FeFETs as the entropy source. Based on the experimental measurements, the proposed PUF shows satisfying performance including high uniformity, uniqueness, reconfigurability and reliability. To resist machine-learning attack, XOR structure was introduced, and simulations show that our proposed PUF has similar resistance to existing attack models with traditional arbiter PUFs. Furthermore, our design is shown to be power-efficient, and highly robust to write voltage, temperature and device size, which makes it a competitive security solution for Internet-of-Things edge devices.

preprint2022arXiv

Unravelling Distance-Dependent Inter-Site Interactions and Magnetic Transition Effects of Heteronuclear Single Atom Catalysts on Electrochemical Oxygen Reduction

Inter-site interactions between single atom catalysts (SACs) in the high loading regime are critical to tuning the catalytic performance. However, the understanding on such interactions and their distance dependent effects remains elusive, especially for the heteronuclear SACs. In this study, we reveal the effects of the distance-dependent inter-site interaction on the catalytic performance of SACs. Using the density functional theory calculations, we systematically investigate the heteronuclear iron and cobalt single atoms co-supported on the nitrogen-doped graphene (FeN4-C and CoN4-C) for oxygen reduction reaction (ORR). We find that as the distance between Fe and Co SACs decreases, FeN4-C exhibits a reduced catalytic activity, which can be mitigated by the presence of an axial hydroxyl ligand, whereas the activity of CoN4-C shows a volcano-like evolution with the optimum reached at the intermediate distance. We further unravel that the transition towards the high-spin state upon adsorption of ORR intermediate adsorbates is responsible for the decreased activity of both FeN4-C and CoN4-C at short inter-site distance. Such high-spin state transition is also found to significantly shift the linear relation between hydroxyl (*OH) and hydroperoxyl (*OOH) adsorbates. These findings not only shed light on the SAC-specific effect of the distance-dependent inter-site interaction between heteronuclear SACs, but also pave a way towards shifting the long-standing linear relations observed in multiple-electron chemical reactions.

preprint2021arXiv

Phase diagram and superlattice structures of monolayer phosphorus carbide (Px_xC1−x_{1-x})

Phase stability and properties of two-dimensional phosphorus carbide, Px_xC1−x_{1-x}, are investigated using the first-principles method in combination with cluster expansion and Monte Carlo simulation. Monolayer Px_xC1−x_{1-x} is found to be a phase separating system which indicates difficulty in fabricating monolayer Px_xC1−x_{1-x} or crystalline Px_xC1−x_{1-x} thin films. Nevertheless, a bottom-up design approach is used to determine the stable structures of Px_xC1−x_{1-x} of various compositions which turn out to be superlattices consisting of alternating carbon and phosphorus nanoribbons along the armchair direction. Results of first-principles calculations indicate that once these structures are produced, they are mechanically and thermodynamically stable. All the ordered structures are predicted to be semiconductors, with band gap ranging from 0.2 to 1.2 eV. In addition, the monolayer Px_xC1−x_{1-x} are predicted to have high carrier mobility, and high optical absorption in the ultraviolet region which shows a red-shift as the P:C ratio increases. These properties make 2D Px_xC1−x_{1-x} promising materials for applications in electronics and optoelectronics.

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