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Xiaoyan Ying

Xiaoyan Ying contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Relay Aided Intelligent Reconfigurable Surfaces: Achieving the Potential Without So Many Antennas

This paper proposes a novel relay-aided intelligent reconfigurable surface (IRS) architecture for future wireless communication systems. The proposed architecture, which consists of two side-by-side intelligent surfaces connected via a full-duplex relay, has the potential of achieving the promising gains of intelligent surfaces while requiring much smaller numbers of reflecting elements. Consequently, the proposed IRS architecture needs significantly less channel estimation and beam training overhead and provides higher robustness compared to classical IRS approaches. Further, thanks to dividing the IRS reflection process over two surfaces, the position and orientation of these surfaces can be optimized to extend the wireless communication coverage and enhance the system performance. In this paper, the achievable rates and required numbers of elements using the proposed relay-aided IRS architecture are first analytically characterized and then evaluated using numerical simulations. The results show that the proposed architecture can achieve the data rate targets with much smaller numbers of elements compared to typical IRS solutions, which highlights a promising path towards the practical deployment of these intelligent surfaces.

preprint2020arXiv

Super-Planckian Radiative Heat Transfer between Metallic Surfaces Due to Near-Field and Thin-Film Effects

In this Letter we experimentally demonstrate that the radiative heat transfer between metallic planar surfaces exceeds the blackbody limit by employing the near-field and thin-film effects. Nanosized polystyrene particles were used to create a nanometer gap between aluminum thin-films of different thicknesses coated on 5x5 mm2 diced silicon chips while the gap spacing is fitted from the near-field measurement with bare Si chips. The experimental results are validated by theoretical calculation based on fluctuational electrodynamics. The near-field radiative heat flux between 13-nm Al thin-film samples at 215 nm gap distance is measured to be 6.4 times over the blackbody limit and 420 times compared to the far-field radiative heat transfer between metallic surfaces with a temperature difference of 65 K. In addition, the theoretical prediction suggests a near-field enhancement of 122 times relative to the blackbody limit and 8000 times over far-field one at 50-nm vacuum gap between 20-nm Al thin-film samples, under the same temperature difference of 65 K. This work will facilitate the understanding and application of near-field radiation to thermal power conversion, noncontact cooling, heat flow management, and optical storage where metallic materials are involved.

preprint2019arXiv

Super-Planckian Radiative Heat Transfer between Macroscale Plates with Vacuum Gaps Down to 190 nm Directly Created by SU-8 Posts and Characterized by Capacitance Method

In this work we experimentally demonstrated the near-field thermal radiation enhancement over the blackbody limit by 11 times between highly doped silicon chips with 1x1 cm2 size at a vacuum gap distance of 190 nm under a temperature difference of 74.7 K above room temperature. SU-8 polymer posts, which significantly reduced the conduction less than 6% of the total heat transfer due to its low thermal conductivity, were carefully fabricated with different heights to directly create vacuum gaps from 507 nm down to 190 nm precisely determined in-situ by capacitance measurement. Experimental results were validated by theoretical calculations based on fluctuational electrodynamics, which revealed the enhancement mechanism mainly as coupled surface plasmon polariton. The experimental method developed here will facilitate the potential applications of near-field radiative devices made of electrically conductive materials like metals, graphene, and transparent conductive oxide besides heavily doped semiconductors for thermal energy conversion, radiative thermal rectification, and radiative heat modulation.