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Payam Sabbaghi

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physics.app-ph cond-mat.mes-hall

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preprint2020arXiv

Near-Field Thermophotovoltaic Energy Conversion with Thin-film Tandem Cells

The performance of a near-field thermophotovoltaic system with a tandem-cell structure composed of thin-film p-doped GaSb and n-doped InAs sub-cells on a gold backside reflector is theoretically investigated. The temperatures of the Ga-doped ZnO emitter and the tandem cells are set as 1800 K and 300 K, while the thicknesses of GaSb and InAs sub-cells are considered as 1.5um and 0.5um, respectively. Fluctuational electrodynamics along with the multilayer dyadic Green's function is used to study near-field radiative heat transfer with the consideration of photon chemical potential, whereas radiative recombination and nonradiative Auger recombination are taken into account for evaluating the electrical performance of the tandem cells. At a vacuum gap of 50 nm, it is found that the tandem cells with independent charge collections achieve electrical power output 468.8 kW/m2 at a conversion efficiency of 41%, generating relatively 87% (or 21%) more power with about absolute 5% (or 10%) higher efficiency than the single GaSb (or InAs) cell of the same 2-um thickness. The physical mechanism of near-field spectral heat transfer is elucidated with energy transmission coefficient, while the current-voltage characteristics of sub-cells are discussed in detail. This work will pave the way to enhance near-field thermophotovoltaic energy conversion performance with tandem or multi-junction cells.

preprint2020arXiv

Super-Planckian Radiative Heat Transfer between Metallic Surfaces Due to Near-Field and Thin-Film Effects

In this Letter we experimentally demonstrate that the radiative heat transfer between metallic planar surfaces exceeds the blackbody limit by employing the near-field and thin-film effects. Nanosized polystyrene particles were used to create a nanometer gap between aluminum thin-films of different thicknesses coated on 5x5 mm2 diced silicon chips while the gap spacing is fitted from the near-field measurement with bare Si chips. The experimental results are validated by theoretical calculation based on fluctuational electrodynamics. The near-field radiative heat flux between 13-nm Al thin-film samples at 215 nm gap distance is measured to be 6.4 times over the blackbody limit and 420 times compared to the far-field radiative heat transfer between metallic surfaces with a temperature difference of 65 K. In addition, the theoretical prediction suggests a near-field enhancement of 122 times relative to the blackbody limit and 8000 times over far-field one at 50-nm vacuum gap between 20-nm Al thin-film samples, under the same temperature difference of 65 K. This work will facilitate the understanding and application of near-field radiation to thermal power conversion, noncontact cooling, heat flow management, and optical storage where metallic materials are involved.

preprint2019arXiv

Super-Planckian Radiative Heat Transfer between Macroscale Plates with Vacuum Gaps Down to 190 nm Directly Created by SU-8 Posts and Characterized by Capacitance Method

In this work we experimentally demonstrated the near-field thermal radiation enhancement over the blackbody limit by 11 times between highly doped silicon chips with 1x1 cm2 size at a vacuum gap distance of 190 nm under a temperature difference of 74.7 K above room temperature. SU-8 polymer posts, which significantly reduced the conduction less than 6% of the total heat transfer due to its low thermal conductivity, were carefully fabricated with different heights to directly create vacuum gaps from 507 nm down to 190 nm precisely determined in-situ by capacitance measurement. Experimental results were validated by theoretical calculations based on fluctuational electrodynamics, which revealed the enhancement mechanism mainly as coupled surface plasmon polariton. The experimental method developed here will facilitate the potential applications of near-field radiative devices made of electrically conductive materials like metals, graphene, and transparent conductive oxide besides heavily doped semiconductors for thermal energy conversion, radiative thermal rectification, and radiative heat modulation.